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MMBZ15VDC PDF даташит

Спецификация MMBZ15VDC изготовлена ​​​​«Vishay Siliconix» и имеет функцию, называемую «Small Signal Zener Diodes / Dual».

Детали детали

Номер произв MMBZ15VDC
Описание Small Signal Zener Diodes / Dual
Производители Vishay Siliconix
логотип Vishay Siliconix логотип 

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MMBZ15VDC Даташит, Описание, Даташиты
VISHAY
MMBZ...VDA and C Series
Vishay Semiconductors
Small Signal Zener Diodes, Dual
Features
• Dual Silicon Planar Zener Diodes with Common
Cathode or Common Anode configurations.
• Dual package provides for Bidirectional or sepa-
rate unidirectional configurations.
• The dual configurations protect two separate lines
with only one device.
• Peak Power: 40 W @1 ms (Bidirectional) .
• Ideal for ESD Protection.
• For bidirectional operation, circuit connected to
pins 1 and 2. For unidirectional operation, circuit
connected to pins 1 and 3 or pins 2 and 3.
Mechanical Data
Case: SOT-23 Plastic case
Weight: approx. 8.8 mg
Terminals: Solderable per MIL-STD-750, method
2026
Packaging Codes/Options:
GS18/ 10 k per 13 " reel (8 mm tape), 10 k/box
GS08/ 3 k per 7 " reel (8 mm tape), 15 k/box
MMBZ15VDC
MMBZ27VDC
3
12
Common Cathode
18654
Marking:
MMBZ15VDC = TC5
MMBZ27VDC = TC7
MMBZ15VDA = TA5
MMBZ27VDA = TA7
MMBZ15VDA
MMBZ27VDA
3
12
Common Anode
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Peak power dissipation1)
PPK
Power dissipation
on FR-5 Board2)
Tamb = 25 °C
Derate above 25 °C
Ptot
Power dissipation
on Alumina Substrate3)
Tamb = 25 °C
Derate above 25 °C
Ptot
1) Nonrepetitive current pulse per Figure 2 and derate above Tamb = 25 °C per Figure 3.
2) FR-5 = 1.0 x 0.75 x 0.62 in.
3) Alumina = 0.4 x 0.3 x 0.024 in., 99.5 % alumina.
4) The MMBZ6V8DC/A is rated at 24 V.
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to ambiant air
Operating and storage temperature range
Test condition
Symbol
RthJA
Tj, Tstg
Value
404)
225
1.8
300
2.4
Value
556
- 55 to + 150
Document Number 85808
Rev. 1.4, 08-Jul-04
Unit
W
mW
mW/°C
mW
mW/°C
Unit
°C/W
°C
www.vishay.com
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MMBZ15VDC Даташит, Описание, Даташиты
MMBZ...VDA and C Series
Vishay Semiconductors
VISHAY
Electrical Characteristics
Partnumber
Breakdown
Voltage1)
VBR at IT
Test
Current
IT
Working
Peak
Reverse
Voltage
VRWM
Max.
Reverse
Leakage
Current
IR
Max.
Reverse
Surge
Current
IPP
MMBZ15VDA
MMBZ27VDA
MMBZ15VDC
MMBZ27VDC
V
min max
14.70 15.30
26.46 27.54
14.30 15.80
25.65 28.35
mA
1.0
1.0
1.0
1.0
V
12.8
22.0
12.8
22.0
nA
100
80
100
80
A
1.9
1.0
1.9
1.0
Note:
1) VBR measured at pulse test current IT at an ambient temperature of 25 °C
2) Surge current waveform per Figure 2 and derate per Figure 3
Max. Reverse
Voltage
(Clamping
Voltage)
VC @ IRSM2)
V
21.2
38.0
21.2
38.0
Max.
Temperature
Coefficient
at VBR
mV/°C
16
30
16
30
Max. Forward
Voltage
VF @ IF
V mA
0.9 200
1.1 200
0.9 200
1.1 200
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
300
250
ALUMINA SUBSTRATE
200
150
FR-5 BOARD
100
50
0
0 25 50 75 100 125 150 175
18655
T, Temperature( °C)
Figure 1. Steady State Power Derating Curve
Pulse width (tp) is defined
tr as that point where the
peak current decays to
Peak Value - IRSM 50 % of IRSM tr 10 µs
100
Half Value -
IRSM
2
50
tp
0
0
18656
123
t, Time (ms)
4
Figure 2. Pulse Waveform
www.vishay.com
2
Document Number 85808
Rev. 1.4, 08-Jul-04









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MMBZ15VDC Даташит, Описание, Даташиты
VISHAY
MMBZ...VDA and C Series
Vishay Semiconductors
100
75
50
25
0
0
18657
25 50 75 100 125 150 175 200
TA -Ambient Temperature (°C)
Figure 3. Pulse Derating Curve
Package Dimensions in mm (Inches)
0.4 (.016) 0.4 (.016)
3.1 (.122)
2.8 (.110)
0.4 (.016)
3
0.175 (.007)
0.098 (.005)
0.1 (.004) max.
2.6 (.102)
2.35 (.092)
Mounting Pad Layout
0.52 (0.020)
ISO Method E
0.9 (0.035)
2.0 (0.079)
1
0.95 (.037)
2
0.95 (.037)
0.95 (0.037)
0.95 (0.037)
17418
Document Number 85808
Rev. 1.4, 08-Jul-04
www.vishay.com
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