DataSheet26.com

MJE13007 PDF даташит

Спецификация MJE13007 изготовлена ​​​​«Motorola Semiconductors» и имеет функцию, называемую «POWER TRANSISTOR 8.0 AMPERES 400 VOLTS 80/40 WATTS».

Детали детали

Номер произв MJE13007
Описание POWER TRANSISTOR 8.0 AMPERES 400 VOLTS 80/40 WATTS
Производители Motorola Semiconductors
логотип Motorola Semiconductors логотип 

10 Pages
scroll

No Preview Available !

MJE13007 Даташит, Описание, Даташиты
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE13007/D
Designer's Data Sheet
SWITCHMODE
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The MJE/MJF13007 is designed for high–voltage, high–speed power switching
inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V
switchmode applications such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
VCEO(sus) 400 V
Reverse Bias SOA with Inductive Loads @ TC = 100°C
700 V Blocking Capability
SOA and Switching Applications Information
Two Package Choices: Standard TO–220 or Isolated TO–220
MJF13007 is UL Recognized to 3500 VRMS, File #E69369
MJE13007
MJF13007
POWER TRANSISTOR
8.0 AMPERES
400 VOLTS
80/40 WATTS
MAXIMUM RATINGS
Rating
Symbol MJE13007 MJF13007 Unit
Collector–Emitter Sustaining Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector Current — Peak (1)
Base Current — Continuous
Base Current — Peak (1)
Emitter Current — Continuous
Emitter Current — Peak (1)
RMS Isolation Voltage
(for 1 sec, R.H. < 30%, TA = 25°C)
Test No. 1 Per Fig. 15
Test No. 2 Per Fig. 16
Test No. 3 Per Fig. 17
Proper strike and creepage distance must
be provided
VCEO
VCES
VEBO
IC
ICM
IB
IBM
IE
IEM
VISOL
400
700
9.0
8.0
16
4.0
8.0
12
24
— 4500
— 3500
— 1500
Vdc
Vdc
Vdc
Adc
Adc
Adc
V
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 80
40* Watts
0.64 0.32 W/°C
Operating and Storage Temperature
TJ, Tstg
– 65 to 150
°C
THERMAL CHARACTERISTICS
Thermal Resistance
— Junction to Case
— Junction to Ambient
RθJC
RθJA
°1.56°
°62.5°
°3.12°
°62.5°
°C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8from Case for 5 Seconds
TL
260 °C
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%.
*Measurement made with thermocouple contacting the bottom insulated mountign surface of the
*package (in a location beneath the die), the device mounted on a heatsink with thermal grease applied
*at a mounting torque of 6 to 8lbs.
CASE 221A–06
TO–220AB
MJE13007
CASE 221D–02
ISOLATED TO–220 TYPE
UL RECOGNIZED
MJF13007
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1









No Preview Available !

MJE13007 Даташит, Описание, Даташиты
MJE13007 MJF13007
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min Typ Max Unit
*OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 10 mA, IB = 0)
Collector Cutoff Current
(VCES = 700 Vdc)
(VCES = 700 Vdc, TC = 125°C)
Emitter Cutoff Current
(VEB = 9.0 Vdc, IC = 0)
VCEO(sus)
400
— Vdc
ICES
IEBO
mAdc
— — 0.1
— — 1.0
— — 100 µAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
Clamped Inductive SOA with Base Reverse Biased
IS/b
See Figure 6
See Figure 7
*ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 Adc, VCE = 5.0 Vdc)
(IC = 5.0 Adc, VCE = 5.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 0.4 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc)
(IC = 8.0 Adc, IB = 2.0 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc, TC = 100°C)
Base–Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 0.4 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc, TC = 100°C)
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 500 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Collector to Heatsink Capacitance, MJF13007
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
hFE —
8.0 — 40
5.0 — 30
VCE(sat)
Vdc
— 1.0
— 2.0
— 3.0
— 3.0
VBE(sat)
Vdc
— 1.2
— 1.6
— 1.5
fT
Cob
Cc–hs
4.0 14 — MHz
— 80 — pF
— 3.0 — pF
Delay Time
Rise Time
Storage Time
Fall Time
(VCC = 125 Vdc, IC = 5.0 A,
IB1 = IB2 = 1.0 A, tp = 25 µs,
Duty Cycle 1.0%)
Inductive Load, Clamped (Table 1)
td
0.025
0.1
µs
tr — 0.5 1.5
ts — 1.8 3.0
tf — 0.23 0.7
Voltage Storage Time
Crossover Time
Fall Time
VCC = 15 Vdc, IC = 5.0 A
Vclamp = 300 Vdc
IB(on) = 1.0 A, IB(off) = 2.5 A
LC = 200 µH
* Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
tsv
tc
tfi
— 1.2 2.0 µs
— 1.6 3.0
— 0.15 0.30 µs
— 0.21 0.50
— 0.04 0.12 µs
— 0.10 0.20
2 Motorola Bipolar Power Transistor Device Data









No Preview Available !

MJE13007 Даташит, Описание, Даташиты
1.4
IC/IB = 5
1.2
1
0.8 TC = – 40°C
25°C
0.6 100°C
0.4
0.01 0.02
0.05 0.1 0.2 0.5 1 2
IC, COLLECTOR CURRENT (AMPS)
5 10
Figure 1. Base–Emitter Saturation Voltage
MJE13007 MJF13007
10
5 IC/IB = 5
2
1
0.5
0.2
TC = – 40°C
0.1
0.05 25°C
100°C
0.02
0.01
0.01 0.02 0.05
0.1
0.2
0.5 1 2
IC, COLLECTOR CURRENT (AMPS)
5 10
Figure 2. Collector–Emitter Saturation Voltage
3
TJ = 25°C
2.5
2
1.5 IC = 8 A
1 IC = 5 A
IC = 3 A
0.5 IC = 1 A
0
0.01 0.02
0.05 0.1 0.2 0.5 1 2 3 5
IB, BASE CURRENT (AMPS)
Figure 3. Collector Saturation Region
10
100
TJ = 100°C
25°C
10 40°C
VCE = 5 V
10000
1000
100
Cib
Cob
TJ = 25°C
1
0.01 0.1
1
IC, COLLECTOR CURRENT (AMPS)
Figure 4. DC Current Gain
10
10
0.1 1 10 100 1000
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitance
Motorola Bipolar Power Transistor Device Data
3










Скачать PDF:

[ MJE13007.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
MJE13001TransistorsSI Semiconductors
SI Semiconductors
MJE13001NPN Epitaxial Silicon TransistorUnisonic Technologies
Unisonic Technologies
MJE13001-QNPN SILICON TRANSISTORUnisonic Technologies
Unisonic Technologies
MJE13001AHTRANSISTORSSI Semiconductors
SI Semiconductors

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск