DataSheet26.com

7MBR10NE120 PDF даташит

Спецификация 7MBR10NE120 изготовлена ​​​​«Fuji Electric» и имеет функцию, называемую «IGBT(1200V/10A)».

Детали детали

Номер произв 7MBR10NE120
Описание IGBT(1200V/10A)
Производители Fuji Electric
логотип Fuji Electric логотип 

9 Pages
scroll

No Preview Available !

7MBR10NE120 Даташит, Описание, Даташиты
7MBR10NE120
IGBT MODULE
1200V / 10A / PIM
IGBT Modules
Features
· High Speed Switching
· Voltage Drive
· Low Inductance Module Structure
· Converter Diode Bridge Dynamic Brake Circuit
Applications
· Inverter for Motoe Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Repetitive peak reverse voltage
Average forward current
Surge current
Repetitive peak reverse voltage
Non-Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I²t (Non-Repetitive)
Symbol
VCES
VGES
IC
ICP
-IC
PC
VCES
VGES
IC
ICP
PC
VRRM
IF(AV)
IFSM
VRRM
VRSM
IO
IFSM
Operating junction temperature
Storage temperature
Isolation voltage
Mounting screw torque
Tj
Tstg
Viso
*1 Recommendable value : 1.3 to 1.7 N·m (M4)
Condition
Continuous
1ms
1 device
Continuous
1ms
1 device
10ms
50Hz/60Hz sine wave
Tj=150°C, 10ms
Tj=150°C, 10ms
AC : 1 minute
Ra ting
1200
±20
10
20
10
60
1200
±20
5
12.5
40
1200
1
50
1600
1700
25
320
512
+150
-40 to +125
AC 2500
1.7 *1
Unit
V
V
A
A
A
W
V
V
A
A
W
V
A
A
V
V
A
A
A²s
°C
°C
V
N·m









No Preview Available !

7MBR10NE120 Даташит, Описание, Даташиты
IGBT Module
7MBR10NE120
Electrical characteristics (Tj=25°C unless without specified)
Item
Symbol
Condition
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Collector-Emitter voltage
Input capacitance
Switching time
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Switching time
Reverse current
Reverse recovery time
Forward voltage
Reverse current
ICES
IGES
VGE(th)
VCE(sat)
-VCE
Cies
ton
tr
toff
tf
trr
ICES
IGES
VCE(sat)
ton
tr
toff
tf
IRRM
trr
VFM
IRRM
VCE=1200V, VGE=0V
VCE=0V, VGE=±20V
VCE=20V, IC=10mA
VGE=15V, Ic=10A
-Ic=10A
VGE=0V, VCE=10V, f=1MHz
VCC=600V
IC=10A
VGE=±15V
RG=62 ohm
IF=10A
VCES=1200V, VGE=0V
VCE=0V, VGE=±20V
IC=5A, VGE=15V
VCC=600V
IC=5A
VGE=±15V
RG=120 ohm
VR=1200V
IF=25A
VR=1600V
Characteristics
Min.
Typ.
Max.
1.0
0.1
4.5 7.5
3.3
2100
3.0
1.2
0.6
1.5
0.5
0.35
1.0
0.1
3.55
0.8
0.6
1.5
0.5
1
0.6
1.4
1.0
Unit
mA
µA
V
V
V
pF
µs
µs
µs
µs
µs
mA
µA
V
µs
µs
µs
µs
mA
µs
V
mA
Thermal Characteristics
Item
Symbol
Condition
Inverter IGBT
Thermal resistance ( 1 device )
Rth(j-c)
Inverter FRD
Brake IGBT
Converter Diode
Contact thermal resistance *
Rth(c-f)
With thermal compound
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Min.
Characteristics
Typ.
Max.
1.67
3.30
3.12
3.40
0.05
Unit
°C/W
Equivalent Circuit Schematic









No Preview Available !

7MBR10NE120 Даташит, Описание, Даташиты
IGBT Module
Characteristics (Representative)
Inverter
Collector current vs. Collector-Emitter voltage
Tj=25°C
25
20
15
10
5
0
0
1234
Collector-Emitter voltage : VCE [V]
5
7MBR10NE120
25
20
15
10
5
0
0
Collector current vs. Collector-Emitter voltage
Tj=125°C
1234
Collector-Emitter voltage : VCE [V]
5
10
8
6
4
2
0
0
1000
Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C
5 10 15
Gate-Emitter voltage : VGE [V]
20
Switching time vs. Collector current
Vcc=600V, RG=62 ohm, VGE=±15V, Tj=25°C
10
8
6
4
2
0
25 0
1000
Collector-Emitter vs. Gate-Emitter voltage
Tj=125°C
5 10 15 20
Gate-Emitter voltage : VGE [V]
25
Switching time vs. Collector current
Vcc=600V, RG=62 ohm, VGE=±15V, Tj=125°C
100
100
10
0
5 10
Collector current : Ic [A]
15
10
20 0
5 10
Collector current : Ic [A]
15
20










Скачать PDF:

[ 7MBR10NE120.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
7MBR10NE120IGBT(1200V/10A)Fuji Electric
Fuji Electric

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск