MG25J1BS11 PDF даташит
Спецификация MG25J1BS11 изготовлена «Toshiba» и имеет функцию, называемую «Silicon N - Channel IGBT». |
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Детали детали
Номер произв | MG25J1BS11 |
Описание | Silicon N - Channel IGBT |
Производители | Toshiba |
логотип |
5 Pages
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TOSHIBA IGBT Module Silicon N - Channel IGBT
MG25J1BS11
High Power Switching Applications
Motor Control Applications
MG25J1BS11
Unit: mm
Enhancement-mode
The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1ms
Collector power dissipation
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
Symbol
VCES
VGES
IC
ICP
PC
Tj
Tstg
VIsol
―
JEDEC
JEITA
TOSHIBA
Rating
600
±20
25
50
125
150
−40 to 125
2500
(AC 1 Minute)
2/3
Unit
V
V
A
W
°C
°C
V
N·m
―
―
2-33F2A
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Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter
saturation voltage
Input capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Thermal resistance
IGES
ICES
VGE (OFF)
VCE (sat)
Cies
tr
ton
tf
toff
Rth (j-c)
Test Condition
VGE = ±20V, VCE = 0
VCE = 600V, VGE = 0
IC = 25mA, VCE = 5V
IC = 25A, VGE = 15V
VCE = 10V, VGE = 0, f = 1MHz
―
MG25J1BS11
Min Typ. Max Unit
― ― ±500 nA
― ― 1.0 mA
3.0 ― 6.0 V
― 2.3 2.7 V
― 1400 ―
pF
― 0.3 0.6
― 0.4 0.8
µs
― 0.6 1.0
― 1.0 1.6
― ― 1.00 °C / W
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MG25J1BS11
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Номер в каталоге | Описание | Производители |
MG25J1BS11 | Silicon N - Channel IGBT | Toshiba |
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