MA6X127 PDF даташит
Спецификация MA6X127 изготовлена «Panasonic» и имеет функцию, называемую «Silicon epitaxial planar type». |
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Детали детали
Номер произв | MA6X127 |
Описание | Silicon epitaxial planar type |
Производители | Panasonic |
логотип |
2 Pages
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Switching Diodes
MA6X127
Silicon epitaxial planar type
For switching circuits
I Features
• Four-element contained in one package, allowing high-density
mounting
• Centrosymmetrical wiring, allowing to free from the taping direc-
tion
• The mirror image wiring of (MA6X122)
• High breakdown voltage (VR = 80 V)
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse voltage (DC)
Peak reverse voltage
Average forward current*1
Peak forward current*1
Non-repetitive peak forward
surge current*1,2
VR
VRM
IF(AV)
IFM
IFSM
80
80
100
225
500
Junction temperature
Storage temperature
Note) *1 : Value for single diode
*2 : t = 1 s
Tj
Tstg
150
−55 to +150
Unit
V
V
mA
mA
mA
°C
°C
0.65 ± 0.15
6
5
4
2.8
+ 0.2
− 0.3
1.5
+ 0.25
− 0.05
Unit : mm
0.65 ± 0.15
1
2
3
0.1 to 0.3
0.4 ± 0.2
1 : Anode 3,4 4 : Anode 1,2
2 : Cathode 1 5 : Cathode 3
3 : Cathode 2 6 : Cathode 4
Mini Type Package (6-pin)
Marking Symbol: M2U
Internal Connection
61
52
43
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Reverse current (DC)
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
Reverse recovery time*
IR
VF
VR
Ct
trr
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
Conditions
VR = 75 V
IF = 100 mA
IR = 100 µA
VR = 0 V, f = 1 MHz
IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100 Ω
Min Typ Max
100
1.2
80
15
10
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
Input Pulse
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 0.1 · IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
Unit
nA
V
V
pF
ns
1
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MA6X127
Switching Diodes
IF VF
103
102
Ta = 150°C
10 100°C
25°C
− 20°C
1
10−1
10−2
0
0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V)
IR VR
1
10−1
Ta = 150°C
100°C
10−2
10−3
25°C
10−4
0 20 40 60 80 100 120
Reverse voltage VR (V)
VF Ta
1.6
1.4
1.2
1.0
IF = 100 mA
0.8
10 mA
0.6
3 mA
0.4
0.2
0
−40 0 40 80 120 160 200
Ambient temperature Ta (°C)
IR Ta
1
VR = 75 V
35 V
10−1
1V
10−2
10−3
10−4
−40 0 40 80 120 160 200
Ambient temperature Ta (°C)
Ct VR
6
f = 1 MHz
Ta = 25°C
5
4
3
2
1
0
0 20 40 60 80 100 120
Reverse voltage VR (V)
1 000
300
100
IF(surge) tW
Ta = 25°C
IF(surge)
tW
Non repetitive
30
10
3
1
0.3
0.1
0.03
0.1 0.3 1 3 10
Pulse width tW (ms)
30
2
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Номер в каталоге | Описание | Производители |
MA6X121 | Silicon epitaxial planar type | Panasonic |
MA6X122 | Silicon epitaxial planar type | Panasonic |
MA6X123 | Silicon epitaxial planar type | Panasonic |
MA6X124 | Silicon epitaxial planar type | Panasonic |
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