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MBR3060PT PDF даташит

Спецификация MBR3060PT изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «30 Ampere Schottky Barrier Rectifiers».

Детали детали

Номер произв MBR3060PT
Описание 30 Ampere Schottky Barrier Rectifiers
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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MBR3060PT Даташит, Описание, Даташиты
MBR3035PT - MBR3060PT
Features
Low power loss, high efficiency.
High surge capacity.
For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
Metal silicon junction, majority carrier
conduction.
High current capacity, low forward
voltage drop.
Guard ring for over voltage protection.
PIN 1
PIN 3
0.245(6.2)
0.225(5.7)
0.645(16.4)
0.625(15.9)
0.203(5.16)
0.193(4.90)
0.078(1.98)
0.323(8.2)
0.313(7.9)
10°
30°
TO-3P/
TO-247AD
+
CASE
PIN 2
0.84(21.3)
0.82(20.8)
.17(4.3)
0.134(3.4)
0.114(2.9)
1 2 3 0.086(2.18)
0.076(1.93)
0.16(4.1)
0.14(3.5)
0.795(20.2)
0.775(19.7)
0.127(3.22)
0.117(2.97)
10° TYP
BOTH SIDES
0.118(3.0)
0.108(2.7)
30 Ampere Schottky Barrier Rectifiers
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
0.225(5.7)
0.205(5.2)
0.048(1.22)
0.044(1.12)
0.030(0.76)
0.020(0.51)
Dimensions are in: inches (mm)
Symbol
Parameter
Value
Units
IO
if(repetitive)
if(surge)
PD
RθJL
Tstg
TJ
Average Rectified Current
Peak Repetitive Forward Current
(Rated VR , Square Wave, 20 KHz) @ TA = 130°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Lead
Storage Temperature Range
Operating Junction Temperature
30
30
200
3.0
25
1.4
-65 to +175
-65 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
A
A
A
W
mW /°C
°C/W
°C
°C
Electrical Characteristics TA = 25°C unless otherwise noted
Parameter
Device
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
DC Reverse Voltage (Rated VR)
Voltage Rate of Change (Rated VR)
Maximum Reverse Current
@ rated VR
TA = 25°C
TA = 125°C
Maximum Forward Voltage
IF = 20 A, TC = 25°C
IF = 20 A, TC = 125°C
IF = 30 A, TC = 25°C
IF = 30 A, TC = 125°C
Peak Repetitive Reverse Surge
Current
2.0 us Pulsu Width, f = 1.0 KHz
3035PT
35
24
35
3045PT
3050PT
45 50
31 35
45 50
10,000
3060PT
60
42
60
1.0 5.0
60 100
- 0.75
0.60
0.65
0.76 -
0.72 -
1.0 0.5
Units
V
V
V
V/uS
mA
mA
V
V
V
V
A
©1999 Fairchild Semiconductor Corporation
MBR3035PT - MBR3060PT, Rev. A









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MBR3060PT Даташит, Описание, Даташиты
Typical Characteristics
Forward Current Derating Curve
30
MBR3035PT-MBR3045PT
24
MBR3050PT-MBR3060PT
18
SINGLE PHASE
HALF WAVE
12 60HZ
RESISTIVE OR
INDUCTIVE LOAD
6 .375" (9.00mm) LOAD
LENGTHS
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE (º C)
Forward Characteristics
50
TA= 150ºC
10
TA = 25º C
MBR30 50PT -MBR3 060 PT
1
0.1
0.01
0
MBR30 35PT -MBR3 045 PT
Pulse Width = 300µS
2% Duty Cycle
0.2 0.4 0.6 0.8
1
FORWARD VOLTAGE (V)
1.2
Typical Junction Capacitance
5000
2000
1000
MBR3035PT-MBR3045PT
MBR3050PT-MBR3060PT
500
200
100
0.1
1 10
REVERSE VOLTAGE (V)
100
Schotty Barrier Rectifier
(continued)
Non-Repetitive Surge Current
300
250
200
150
100
50
0
12
5 10 20
50 100
NUMBER OF CYCLES AT 60Hz
Reverse Characteristics
50
MBR3035PT-MBR3045PT
10
T A= 125ºC
MBR3050PT-MBR3060PT
1
TA = 75º C
0.1
MBR3035PT-MBR3045PT
0.01
TA = 25º C
0.001
0
MBR3050PT-MBR3060PT
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Transient Thermal Impedance
100
10
1
0.1
0.01
0.1 1 10
T. PULSE DURATION (sec.)
100
MBR3035PT - MBR3060PT, Rev. A









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MBR3060PT Даташит, Описание, Даташиты
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
effectiveness.
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Preliminary
Product Status
Formative or
In Design
First Production
No Identification Needed
Full Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.










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