DataSheet.es    


PDF K1S161611A-I Data sheet ( Hoja de datos )

Número de pieza K1S161611A-I
Descripción 1Mx16 bit Uni-Transistor Random Access Memory
Fabricantes Samsung 
Logotipo Samsung Logotipo



Hay una vista previa y un enlace de descarga de K1S161611A-I (archivo pdf) en la parte inferior de esta página.


Total 10 Páginas

No Preview Available ! K1S161611A-I Hoja de datos, Descripción, Manual

K1S161611A
Document Title
1Mx16 bit Uni-Transistor Random Access Memory
Revision History
Revision No. History
0.0 Initial Draft
0.1 Revised
- Added Lead Free 48-FBGA-6.00x7.00 Product
Preliminary
UtRAM
Draft Date
October 6, 2003
Remark
Preliminary
November 25, 2003 Preliminary
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
- 1 - Revision 0.1
November 2003

1 page




K1S161611A-I pdf
K1S161611A
Preliminary
UtRAM
PRODUCT LIST
Industrial Temperature Products(-40~85°C)
Part Name
Function
K1S161611A-FI70
K1S161611A-BI701)
48-FBGA-6.00x7.00, 70ns
48-FBGA-6.00x7.00, 70ns
1. Lead Free Product
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Supply voltage
Ground
Input high voltage
Input low voltage
1. TA=-40 to 85°C, otherwise specified.
2. Overshoot: Vcc+1.0V in case of pulse width 20ns.
3. Undershoot: -1.0V in case of pulse width 20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Symbol
Vcc
Vss
VIH
VIL
Min
2.7
0
2.2
-0.33)
Typ Max
2.9 3.1
00
- VCC+0.32)
- 0.6
Unit
V
V
V
V
CAPACITANCE1)(f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested.
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Min Max Unit
- 8 pF
- 10 pF
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Average operating current
Output low voltage
Output high voltage
Standby Current(CMOS)
Symbol
Test Conditions
ILI VIN=Vss to Vcc
ILO CS1=VIH or CS2=VIL or OE=VIH or WE=VIL or LB=UB=VIH,
VIO=Vss to Vcc
ICC1 Cycle time=1µs, 100% duty, IIO=0mA, CS10.2V, LB0.2V
or/and UB0.2V, CS2VCC-0.2V, VIN0.2V or VINVCC-0.2V
ICC2 Cycle time=Min, IIO=0mA, 100% duty, CS1=VIL, CS2=VIH
LB=VIL or/and UB=VIL, VIN=VIH or VIL
VOL IOL = 2.1mA
VOH IOH = -0.1mA
Other inputs=0~Vcc
ISB1 1) CS1VCC-0.2V, CS2VCC-0.2V(CS1 controlled) or
2) 0V CS2 0.2V(CS2 controlled)
Min
-1
-1
-
-
-
2.4
-
Typ Max Unit
- 1 µA
- 1 µA
- 7 mA
- 30 mA
- 0.4 V
- -V
- 80 µA
- 5 - Revision 0.1
November 2003

5 Page










PáginasTotal 10 Páginas
PDF Descargar[ Datasheet K1S161611A-I.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
K1S161611A-I1Mx16 bit Uni-Transistor Random Access MemorySamsung
Samsung

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar