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Номер произв	M54HC125B1R
Описание	QUAD BUS BUFFERS 3-STATE
Производители	ST Microelectronics
логотип
1Page No Preview Available ! M54/74HC125 M54/74HC126 . HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V . LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT 25 °C . OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS . BALANCED PROPAGATION DELAYS tPLH = tPHL . SYMMETRICAL OUTPUT IMPEDANCE IOL = IOH = 6 mA (MIN.) . HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) . WIDE OPERATING VOLTAGE RANGE VCC (OPR) = 2 V TO 6 V . PIN AND FUNCTION COMPATIBLE WITH 54/74LS125/126 QUAD BUS BUFFERS (3-STATE) B1R (Plastic Package) F1R (Ceramic Package) M 1R (Micro Package) C1R (Chip Carrier) ORDER CODES : M54HCXXXF1R M74HCXXXM1R M74HCXXXB1R M74HCXXXC1R DESCRIPTION The M54/74HC125/126 are high speed CMOS QUAD BUS BUFFER (3-STATE) FABRICATED IN SILICON GATE C2MOS technology. They have the same high speed performance of LSTTL combined with true CMOS low power con- sumption. These devices require the same 3-STATE control input G to be taken high to make the output go into the high impedance state. All inputs are equipped with protection circuits against static discharge and transient excess volt- age. PIN CONNECTIONS (top view) HC125 INPUT AND OUTPUT EQUIVALENT CIRCUIT HC126 September 1993 NC = No Internal Connection 1/11 No Preview Available ! M54/M74HC125/126 CHIP CARRIER HC125 HC126 TRUTH TABLE (HC125) AG XH LL HL Y Z L H PIN DESCRIPTION (HC125) PIN No 1, 4, 10, 13 2, 5, 9, 12 3, 6, 8, 11 7 14 SYMBOL G1 to G4 A1 to A4 Y1 to Y4 GND VCC NAME AND FUNCTION Output Enable Input Data Inputs Data Outputs Ground (0V) Positive Supply Voltage IEC LOGIC SYMBOLS HC125 TRUTH TABLE (HC126) AG XL LH HH Y Z L H PIN DESCRIPTION (HC126) PIN No 1, 4, 10, 13 2, 5, 9, 12 3, 6, 8, 11 7 14 SYMBOL G1 to G4 A1 to A4 Y1 to Y4 GND VCC NAME AND FUNCTION Output Enable Input Data Inputs Data Outputs Ground (0V) Positive Supply Voltage HC126 2/11 No Preview Available ! CIRCUIT DIAGRAM HC125 M54/M74HC125/126 HC126 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCC Supply Voltage -0.5 to +7 V VI DC Input Voltage -0.5 to VCC + 0.5 V VO IIK IOK IO ICC or IGND DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Source Sink Current Per Output Pin DC VCC or Ground Current -0.5 to VCC + 0.5 ± 20 ± 20 ± 35 ± 70 V mA mA mA mA PD Power Dissipation 500 (*) mW Tstg Storage Temperature -65 to +150 oC TL Lead Temperature (10 sec) 300 oC Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition isnotimplied. (*) 500 mW: ≅ 65 oC derate to 300 mW by 10mW/oC: 65 oC to 85 oC RECOMMENDED OPERATING CONDITIONS Symbol VCC VI VO Top tr, tf Parameter Supply Voltage Input Voltage Output Voltage Operating Temperature: M54HC Series M74HC Series Input Rise and Fall Time VCC = 2 V VCC = 4.5 V VCC = 6 V Value 2 to 6 0 to VCC 0 to VCC -55 to +125 -40 to +85 0 to 1000 0 to 500 0 to 400 Unit V V V oC oC ns 3/11
Всего страниц	11 Pages
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