PDF HYS64V8200GDL-8 Data sheet ( Hoja de datos )

Número de pieza	HYS64V8200GDL-8
Descripción	144 pin SO-DIMM SDRAM Modules
Fabricantes	Infineon
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No Preview Available ! 144 pin SO-DIMM SDRAM Modules 64MB & 128 MB PC100 / PC133 HYS64V8200GDL HYS64V16220GDL • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for PC 100 and PC133 notebook applications • one bank 8M x 64 and two bank 16M x 64 non-parity module organisation • Performance: fCK Clock frequency (max.) tAC Clock access time -7 PC133 2-2-2 133 5.4 -7.5 PC133 3-3-3 133 5.4 -8 PC100 2-2-2 100 6 Units MHz ns • Single +3.3V(± 0.3V ) power supply • Programmable CAS Latency, Burst Length and Wrap Sequence (Sequential & Interleave) • Auto Refresh (CBR) and Self Refresh • Decoupling capacitors mounted on substrate • All inputs, outputs are LVTTL compatible • Serial Presence Detect with E2PROM • Uses 8M x 16 128Mbit SDRAM components • 4096 refresh cycles every 64 ms • Gold contact pad, JEDEC MO-190 outline dimensions • This module family is fully compliant with the latest INTEL SO-DIMM layout and electrical specification • All PC133 modules are fully backward compatible for PC100 applications. INFINEON Technologies 1 9.01 1 page HYS64V8200GDL/HYS64V16220GDL 144 pin SO-DIMM SDRAM Modules WE CS0 CS1 DQMB0 DQ0-DQ7 DQMB1 DQ8-DQ15 CS WE LDQM DQ0-DQ7 CS WE LDQM DQ0-DQ7 UDQM UDQM DQ8-DQ15 DQ8-DQ15 D0 D4 DQMB4 DQ32-DQ39 DQMB5 DQ40-DQ47 CS WE LDQM DQ0-DQ7 CS WE LDQM DQ0-DQ7 UDQM UDQM DQ8-DQ15 DQ8-DQ15 D2 D6 DQMB2 DQ16-DQ23 DQMB3 DQ24-DQ31 CS WE LDQM DQ0-DQ7 CS WE LDQM DQ0-DQ7 UDQM UDQM DQ8-DQ15 DQ8-DQ15 D1 D5 DQMB6 DQ48-DQ55 DQMB7 DQ56-DQ63 CS WE LDQM DQ0-DQ7 CS WE LDQM DQ0-DQ7 UDQM UDQM DQ8-DQ15 DQ8-DQ15 D3 D7 A0-A11, BA0, BA1 VCC V SS RAS C CAS CKE0 CKE1 CLK0 CLK1 D0-D7 D0-D7 D0-D7 D0-D7 D0-D7 D0-D3 D4-D7 4 SDRAM 4 SDRAM E2PROM (256 word x 8 Bit) SA0 SA1 SA2 SCL SDA Note: All resistors are 10 Ω Block Diagram for two bank 16M x 64 SDRAM DIMM - Module INFINEON Technologies 5 9.01 5 Page HYS64V8200GDL/HYS64V16220GDL 144 pin SO-DIMM SDRAM Modules Serial Presence Detects A serial presence detect storage device - E2PROM - is assembled onto the module. Information about the module configuration, speed, etc. is written into the E2PROM device during module production using a serial presence detect protocol ( I2C synchronous 2-wire bus) SPD-Table: Byte# Description SPD Entry Value 0 Number of SPD bytes 128 1 Total bytes in Serial PD 256 2 Memory Type SDRAM 3 Number of Row Addresses 12 4 Number of Column Addresses 9 5 Number of DIMM Banks 1/2 6 Module Data Width 64 7 Module Data Width (cont’d) 0 8 Module Interface Levels LVTTL 9 SDRAM Cycle Time at CL=3 7.5 / 10.0 ns 10 SDRAM Access time from Clock at CL=3 5.4 / 6.0 ns 11 Dimm Config (Error Det/Corr.) none 12 Refresh Rate/Type Self-Refresh, 15.6µs 13 SDRAM width, Primary 14 Error Checking SDRAM data width n/a 15 Minimum clock delay for back-to-back random column address tccd = 1 CLK 16 Burst Length supported 1, 2, 4 & 8 17 Number of SDRAM banks 2 18 Supported CAS Latencies 2, & 3 19 CS Latencies CS latency = 0 20 WE Latencies Write latency = 0 21 SDRAM DIMM module attributes non buffered/non reg. 22 SDRAM Device Attributes :General Vcc tol +/- 10% 23 SDRAM Cycle Time at CL = 2 7.5 / 10.0 ns 24 SDRAM Access Time from Clock at CL=2 5.4 / 6.0 ns 25 SDRAM Cycle Time at CL = 1 not supported 26 SDRAM Access Time from Clock at CL=1 not supported 27 Minimum Row Precharge Time 15/ 20 ns HEX 8M x 64 16M x 64 -7 -7.5 -8 -7 -7.5 -8 80 08 04 0C 09 01 02 40 00 01 75 75 A0 75 75 A0 54 54 60 54 54 60 00 80 10 00 01 0F 04 06 01 01 00 0E 75 A0 A0 75 A0 A0 54 60 60 54 60 60 00 FF FF 00 FF FF 00 FF FF 00 FF FF 0F 14 14 0F 14 14 INFINEON Technologies 11 9.01 11 Page

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