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PDF APM2321 Data sheet ( Hoja de datos )
| Número de pieza | APM2321 | |
| Descripción | P-Channel Enhancement Mode MOSFET | |
| Fabricantes | Etc | |
| Logotipo |  |
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APM2321
P-Channel Enhancement Mode MOSFET
Features
Pin Description
•
-20V/-0.9A
,
RDS(ON)=370mΩ(typ.)
@
V =-4.5V
GS
RDS(ON)=560mΩ(typ.)
@
V =-2.5V
GS
• Super High Dense Cell Design for Extremely
Low RDS(ON)
• Reliable and Rugged
• SOT-23 Package
Applications
D
GS
Top View of SOT-23
S
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
G
Ordering and Marking Information
D
P-Channel MOSFET
APM2321
H andling C ode
Temp. Range
Package Code
Package Code
A : SOT-23
O perating Junction Tem p. R ange
C : -55 to 1 50°C
H andling C ode
TR : Tape & Reel
APM2321A :
M21X
X - Date Code
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
Rating
Unit
VDSS
VGSS
ID*
IDM
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
-20
V
±10
-0.9
A
-3.6
* Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain
the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jun., 2003
1
www.anpec.com.tw
1 page  
APM2321
Typical Characteristics (Cont.)
Source-Drain Diode Forward Voltage
3.6
1
TJ=150°C
TJ=25°C
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
-VSD -Source-to-Drain Voltage (V)
Single Pulse Power
10
8
6
4
2
0
0.01 0.1
1 10
Time (sec)
100 600
Normalized Thermal Transient Impedence, Junction to Ambient
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
D=0.05
D=0.02
D=0.01
0.01
1E-4
SINGLE PULSE
1E-3
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=100°C/W
3.TJM-TA=PDMZthJA
0.01 0.1
1
10
Square Wave Pulse Duration (sec)
100 600
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jun., 2003
5
www.anpec.com.tw
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet APM2321.PDF ] | |
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