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ZXT13P40DE6 PDF даташит

Спецификация ZXT13P40DE6 изготовлена ​​​​«Zetex Semiconductors» и имеет функцию, называемую «40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR».

Детали детали

Номер произв ZXT13P40DE6
Описание 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
Производители Zetex Semiconductors
логотип Zetex Semiconductors логотип 

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ZXT13P40DE6 Даташит, Описание, Даташиты
ZXT13P40DE6
SuperSOT4™
40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
VCEO=-40V; RSAT = 58m ; IC= -3A
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.
FEATURES
Extremely Low Equivalent On Resistance
Extremely Low Saturation Voltage
hFE characterised up to 5A
IC=3A Continuous Collector Current
SOT23-6 package
APPLICATIONS
DC - DC Converters
Power Management Functions
Power switches
Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH
(mm)
ZXT13P40DE6TA
7 8mm embossed
ZXT13P40DE6TC
13 8mm embossed
QUANTITY
PER REEL
3000 units
10000 units
DEVICE MARKING
P40D
SOT23-6
C
C
B
Top View
C
C
E
ISSUE 2 - JANUARY 2000
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ZXT13P40DE6 Даташит, Описание, Даташиты
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at TA=25°C (a)
Linear Derating Factor
Power Dissipation at TA=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
IB
PD
PD
Tj:Tstg
ZXT13P40DE6
LIMIT
-40
-40
-7.5
-10
-3
-500
1.1
8.8
1.7
13.6
-55 to +150
UNIT
V
V
V
A
A
mA
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
Junction to Ambient (b)
RθJA
RθJA
113 °C/W
73 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.
ISSUE 2 - JANUARY 2000
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ZXT13P40DE6 Даташит, Описание, Даташиты
ZXT13P40DE6
TYPICAL CHARACTERISTICS
10
1
100m
DC
1s
100ms
10ms
1ms
100µs
Single Pulse Tamb=25°C
10m
100m
1
10
VCE Collector-Emitter Voltage (V)
Safe Operating Area
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
120
100
80
D=0.5
60
40
D=0.2
20
Single Pulse
D=0.05
D=0.1
0
100µ 1m 10m 100m 1
10
Pulse Width (s)
100
Transient Thermal Impedance
1k
ISSUE 2 - JANUARY 2000
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Номер в каталогеОписаниеПроизводители
ZXT13P40DE640V PNP SILICON LOW SATURATION SWITCHING TRANSISTORZetex Semiconductors
Zetex Semiconductors

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