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WS57C45-35KMB PDF даташит

Спецификация WS57C45-35KMB изготовлена ​​​​«STMicroelectronics» и имеет функцию, называемую «HIGH-SPEED 2K x 8 REGISTERED CMOS PROM/RPROM».

Детали детали

Номер произв WS57C45-35KMB
Описание HIGH-SPEED 2K x 8 REGISTERED CMOS PROM/RPROM
Производители STMicroelectronics
логотип STMicroelectronics логотип 

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WS57C45-35KMB Даташит, Описание, Даташиты
WS57C45
HIGH-SPEED 2K x 8 REGISTERED CMOS PROM/RPROM
KEY FEATURES
Ultra-Fast Access Time
— 25 ns Setup
— 12 ns Clock to Output
Low Power Consumption
Fast Programming
Programmable Synchronous or
Asynchronous Output Enable
DESC SMD Nos. 5962-88735/5962-87529
Pin Compatible with AM27S45 and
CY7C245
Immune to Latch-UP
— Up to 200 mA
ESD Protection Exceeds 2000 V
Programmable Asynchronous Initialize
Register
GENERAL DESCRIPTION
The WS57C45 is an extremely High Performance 16K UV Erasable Registered CMOS RPROM. It is a direct
drop-in replacement for such devices as the AM27S45 and CY7C245.
To meet the requirements of systems which execute and fetch instructions simultaneously, an 8-bit parallel data
register has been provided at the output which allows RPROM data to be stored while other data is being
addressed.
An asynchronous initialization feature has been provided which enables a user programmable 2049th word to be
placed on the outputs independent of the system clock. This feature can be used to force an initialize word or
provide a preset or clear function.
A further advantage of the WS57C45 over Bipolar PROM devices is the fact that it utilizes a proven EPROM
technology. This enables the entire memory array to be tested for switching characteristics and functionality after
assembly. Unlike devices which cannot be erased, every WS57C45 RPROM in a windowed package is 100%
tested with worst case test patterns both before and after assembly.
PIN CONFIGURATION
TOP VIEW
Chip Carrier
NC
A5 A6 A7 VCC A8 A9
A4
4
5
3
2
1
28 27 26
25
A10
A3 6
24 INIT/VPP
A2 7
23 OE/OES
A1 8
22 CP/PGM
A0 9
21 NC
NC 10
20 O7
O0 11
19 O6
12 13 14 15 16 17 18
O1 O2 NC O3 O4 O5
GND
CERDIP/Plastic DIP/
Flatpack
A7
A6
A5
A4
A3
A2
A1
A0
O0
O1
O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
24 VCC
23 A8
22 A9
21 A10
20 INIT/VPP
19 OE/OES
18 CP/PGM
17 O7
16 O6
15 O5
14 O4
13 O3
PRODUCT SELECTION GUIDE
PARAMETER
Set Up Time (Max)
Clock to Output (Max)
WS57C45-25
25 ns
12 ns
Return to Main Menu
WS57C45-35
35 ns
15 ns
WS57C45-45
45 ns
25 ns
2-21









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WS57C45-35KMB Даташит, Описание, Даташиты
WS57C45
ABSOLUTE MAXIMUM RATINGS*
Storage Temperature............................–65° to + 150°C
Voltage on any Pin with
Respect to Ground ................................–0.6V to +7V
VPP with Respect to Ground...................–0.6V to + 14V
ESD Protection ..................................................>2000V
OPERATING RANGE
RANGE
TEMPERATURE
Commercial
0°C to +70°C
Industrial
–40°C to +85°C
Military
–55°C to +125°C
VCC
+5V ± 10%
+5V ± 10%
+5V ± 10%
*NOTICE:
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at these or any other conditions above
those indicated in the operational sections of this
specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of
time may affect device reliability.
DC READ CHARACTERISTICS Over Operating Range. (See Above)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN MAX UNITS
VOL Output Low Voltage
VOH Output High Voltage
ICC1
VCC Active Current
(CMOS)
IOL = 16 mA
IOH = –4 mA
VCC = 5.5 V, f = 0 MHz (Note 1),
Output Not Loaded
Add 2 mA/MHz for AC Operation
Comm'l
Industrial
Military
2.4
0.4 V
V
20 mA
30 mA
30 mA
ICC2
VCC Active Current
(TTL)
VCC = 5.5 V, f = 0 MHz (Note 1),
Output Not Loaded
Add 2 mA/MHz for AC Operation
Comm'l
Industrial
Military
25 mA
35 mA
35 mA
ILI Input Leakage Current VIN = 5.5V or Gnd
ILO Output Leakage Current VOUT = 5.5 V or Gnd
–10 10 µA
–10 10 µA
NOTES: 1. CMOS inputs: GND ± 0.3V or VCC ± 0.3V.
2. TTL inputs: VIL 0.8V, VIH 2.0V.
CAPACITANCE (4)
3. This parameter is only sampled and is not 100% tested.
SYMBOL
PARAMETER
CONDITIONS
MAX
UNITS
CIN
COUT
Input Capacitance
Output Capacitance
TA = 25°C, f = 1 MHz, VCC = 5.0 V
5
8
pF
pF
AC READ CHARACTERISTICS Over Operating Range. (See Above)
PARAMETER
Address Setup to Clock High
Address Hold From Clock High
Clock High to Valid Output
Clock Pulse Width
OES Setup to Clock High
OES Hold From Clock High
Delay From INIT to Valid Output
INIT Recovery to Clock High
INIT Pulse Width
Active Output From Clock High
Inactive Output From Clock High
Active Output From OE Low
Inactive Output From OE High
SYMBOL
t SA
t HA
t CO
t PWC
t SOES
t HOES
t DI
t RI
t PWI
t LZC
t HZC
t LZOE
t HZOE
WS57C45-25
MIN MAX
25
0
12
15
12
5
20
15
15
15
15
15
15
WS57C45-35
MIN MAX
35
0
15
20
15
5
20
20
20
20
20
20
20
WS57C45-45
MIN MAX
45
0
25
20
15
5
35
20
25
30
30
30
30
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2-22









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WS57C45-35KMB Даташит, Описание, Даташиты
BLOCK DIAGRAM
INIT
A10
A9
A8
A7
A6
A5
ROW
DECODER
1 OF 64
64 X 256
PROGRAMMABLE
ARRAY
8 X 1 OF 32
MULTIPLEXER
A4
A3 COLUMN
A2 DECODER
A1 1 OF 32
A0
OE/OES
CP
DQ
C
PROGRAMMABLE
MULTIPLEXER
8-BIT
EDGE-
TRIGGERED
REGISTER
CP
WS57C45
O7
O6
O5
O4
O3
O2
O1
O0
TEST LOAD (High Impedance Test Systems)
2.01 V
98
D.U.T.
30 pF
(INCLUDING SCOPE
AND JIG
CAPACITANCE)
A.C. TESTING INPUT/OUTPUT WAVEFORM
3.0
1.5 TEST 1.5
POINTS
0.0
A.C. testing inputs are driven at 3.0 V for a logic “1” and 0.0 V
for a logic “0.” Timing measurements are made at 1.5 V for
input and output transitions in both directions.
AC READ TIMING DIAGRAM
A0-A10
OES
CP
O0-O7
tHA tSA tHA
tSOES tHOES
tSOES tHOES
tSOES
tPWC
tHOES
tPWC
tPWC
tPWC
tPWC
tPWC
tCO tHZC
tLZC
tCO
OE
tDI tRI
tHZOE
tLZOE
INIT
tPWI
2-23










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