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UP04315 PDF даташит

Спецификация UP04315 изготовлена ​​​​«Panasonic Semiconductor» и имеет функцию, называемую «Silicon NPN epitaxial planar type Silicon PNP epitaxial planar type».

Детали детали

Номер произв UP04315
Описание Silicon NPN epitaxial planar type Silicon PNP epitaxial planar type
Производители Panasonic Semiconductor
логотип Panasonic Semiconductor логотип 

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UP04315 Даташит, Описание, Даташиты
Composite Transistors
UP04315
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
For switching/digital circuits
(0.30)
654
0.20+–00..0025
Unit: mm
0.10±0.02
Features
Two elements incorporated into one package
(Transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half
Basic Part Number
UNR2215 + UNR2115
123
(0.50)(0.50)
1.00±0.05
1.60±0.05
Display at No.1 lead
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Tr1 Collector-base voltage
(Emitter open)
VCBO
50
Collector-emitter voltage
(Base open)
VCEO
50
Collector current
Tr2 Collector-base voltage
(Emitter open)
IC
VCBO
100
50
Collector-emitter voltage
(Base open)
VCEO
50
Overall
Collector current
Total power dissipation
Junction temperature
Storage temperature
IC 100
PT 125
Tj 125
Tstg 55 to +125
Unit
V
V
mA
V
V
mA
mW
°C
°C
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
SSMini6-F1 Package
Marking Symbol: CB
Internal Connection
65
4
Tr1
Tr2
123
Electrical Characteristics Ta = 25°C ± 3°C
Tr1
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0
50 V
Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0
0.1 µA
Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0
0.5 µA
Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0
0.01 mA
Forward current transfer ratio
hFE VCE = 10 V, IC = 5 mA
160 460
Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 0.3 mA
0.25 V
Output voltage high level
VOH VCC = 5 V, VB = 0.5 V, RL = 1 k
4.9
V
Output voltage low level
VOL VCC = 5 V, VB = 2.5 V, RL = 1 k
0.2 V
Input resistance
R1
30% 10 +30% k
Transition frequency
fT VCB = 10 V, IE = −2 mA, f = 200 MHz
150
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: June 2003
SJJ00268BED
1









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UP04315 Даташит, Описание, Даташиты
UP04315
Electrical Characteristics (continued) Ta = 25°C ± 3°C
Tr2
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0
50
V
Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 50 V
Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0
0.1 µA
Collector-emitter cutoff current (Base open) ICEO VCE = −50 V, IB = 0
0.5 µA
Emitter-base cutoff current (Collector open) IEBO VEB = −6 V, IC = 0
0.01 mA
Forward current transfer ratio
hFE VCE = −10 V, IC = −5 mA
160 460
Collector-emitter saturation voltage
VCE(sat) IC = −10 mA, IB = − 0.3 mA
0.25 V
Output voltage high level
VOH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ −4.9
V
Output voltage low level
VOL VCC = −5 V, VB = −2.5 V, RL = 1 k
0.2 V
Input resistance
R1
30% 10 +30% k
Transition frequency
fT VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
PT Ta
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140
Ambient temperature Ta (°C)
Characteristics charts of Tr1
IC VCE
140
Ta = 25°C
0.9 mA IB = 1.0 mA
0.8 mA
120 0.7 mA
0.6 mA
0.5 mA
100 0.4 mA
0.3 mA
80
0.2 mA
60
40 0.1 mA
20
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
VCE(sat) IC
1
IC / IB = 10
Ta = 75°C
0.1
25°C
25˚C
0.01
1
10 100 1 000
Collector current IC (mA)
hFE IC
450
400 Ta = 75°C
VCE = 10 V
350 25°C
300
250 25°C
200
150
100
50
0
1 10 100 1 000
Collector current IC (mA)
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UP04315 Даташит, Описание, Даташиты
Cob VCB
10
f = 1 MHz
Ta = 25°C
IO VIN
100 VO = 5 V
Ta = 25°C
UP04315
VIN IO
10 VO = 0.2 V
Ta = 25°C
10 1
1
0 5 10 15 20 25 30 35
Collector-base voltage VCB (V)
1
0 0.5 1.0 1.5 2.0 2.5
Input voltage VIN (V)
0.1
1 10 100
Output current IO (mA)
Characteristics charts of Tr2
160
140
120
IC VCE
Ta = 25°C
− 0.9 mA
− 0.8 mA
− 0.7 mA
IB = −1.0 mA
− 0.6 mA
100
80
− 0.5 mA
− 0.4 mA
− 0.3 mA
60
− 0.2 mA
40
0.1 mA
20
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
VCE(sat) IC
1
IC / IB = 10
Ta = 75°C
0.1
25°C
25°C
0.01
0.1
1
10 100 1 000
Collector current IC (mA)
hFE IC
400
VCE = −10 V
Ta = 75°C
320
25°C
240
25°C
160
80
0
1
10
100
1 000
Collector current IC (mA)
Cob VCB
10 100
f = 1 MHz
Ta = 25°C
IO VIN
VO = −5 V
Ta = 25°C
100
VIN IO
VO = − 0.2 V
Ta = 25°C
10 10
1
1 1
0.1
0 5 10 15 20 25 30 35 40
Collector-base voltage VCB (V)
0.1
0
0.5 1.0 1.5 2.0 2.5
Input voltage VIN (V)
0.1
1
10 100
Output current IO (mA)
SJJ00268BED
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Номер в каталогеОписаниеПроизводители
UP04314Silicon NPN epitaxial planar type (Tr1) / Silicon PNP epitaxial planar type (Tr2)Panasonic Semiconductor
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UP04315Silicon NPN epitaxial planar type Silicon PNP epitaxial planar typePanasonic Semiconductor
Panasonic Semiconductor

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