DataSheet26.com

UNR4212 PDF даташит

Спецификация UNR4212 изготовлена ​​​​«Panasonic Semiconductor» и имеет функцию, называемую «Silicon NPN epitaxial planar type».

Детали детали

Номер произв UNR4212
Описание Silicon NPN epitaxial planar type
Производители Panasonic Semiconductor
логотип Panasonic Semiconductor логотип 

14 Pages
scroll

No Preview Available !

UNR4212 Даташит, Описание, Даташиты
Transistors with built-in Resistor
UNR421x Series (UN421x Series)
Silicon NPN epitaxial planar type
For digital circuits
4.0±0.2
2.0±0.2
Unit: mm
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
New S type package, allowing supply with the radial taping
Resistance by Part Number
UNR4210 (UN4210)
(R1)
47 k
UNR4211 (UN4211)
10 k
UNR4212 (UN4212)
22 k
UNR4213 (UN4213)
47 k
UNR4214 (UN4214)
10 k
UNR4215 (UN4215)
10 k
UNR4216 (UN4216)
4.7 k
UNR4217 (UN4217)
22 k
UNR4218 (UN4218)
0.51 k
UNR4219 (UN4219)
1 k
UNR421D (UN421D)
47 k
UNR421E (UN421E)
47 k
UNR421F (UN421F)
4.7 k
UNR421K (UN421K)
10 k
UNR421L (UN421L)
4.7 k
(R2)
10 k
22 k
47 k
47 k
5.1 k
10 k
10 k
22 k
10 k
4.7 k
4.7 k
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Tstg
50
50
100
300
150
55 to +150
Unit
V
V
mA
mW
°C
°C
0.75 max.
0.45+–00..1200
(2.5) (2.5)
123
Internal Connection
R1
B
R2
0.45+–00..1200
0.7±0.1
1: Emitter
2: Collector
3: Base
NS-B1 Package
C
E
Publication date: December 2003
Note) The part numbers in the parenthesis show conventional part number.
SJH00020BED
1









No Preview Available !

UNR4212 Даташит, Описание, Даташиты
UNR421x Series
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base UNR4210/4215/4216/4217
cutoff current UNR4213
VCBO
VCEO
ICBO
ICEO
IEBO
Conditions
IC = 10 µA, IE = 0
IC = 2 mA, IB = 0
VCB = 50 V, IE = 0
VCE = 50 V, IB = 0
VEB = 6 V, IC = 0
Min Typ Max Unit
50 V
50 V
0.1 µA
0.5 µA
0.01 mA
0.1
(Collector open) UNR4212/4214/421D/421E
0.2
UNR4211
UNR421F/421K
0.5
1.0
UNR4219
1.5
UNR4218/421L
Forward current UNR4218/421K/421L hFE VCE = 10 V, IC = 5 mA
transfer ratio UNR4219/421D/421F
2.0
20
30
UNR4211
UNR4212/421E
35
60
UNR4213/4214
UNR4210 */4215 */4216 */
4217 *
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
UNR4213/421K
VCE(sat)
VOH
VOL
UNR421D
UNR421E
Transition frequency
Input
UNR4218
resistance UNR4219
fT
R1
IC = 10 mA, IB = 0.3 mA
VCC = 5 V, VB = 0.5 V, RL = 1 k
VCC = 5 V, VB = 2.5 V, RL = 1 k
VCC = 5 V, VB = 3.5 V, RL = 1 k
VCC = 5 V, VB = 10 V, RL = 1 k
VCC = 5 V, VB = 6 V, RL = 1 k
VCB = 10 V, IE = −2 mA, f = 200 MHz
80
160 460
0.25
4.9
0.2
150
30% 0.51 +30%
1.0
V
V
V
MHz
k
UNR4216/421F/421L
4.7
UNR4211/4214/4215/421K
10
UNR4212/4217
22
Resistance
ratio
UNR4210/4213/421D/421E
UNR4218/4219
UNR4214
R1/R2
47
0.08 0.10 0.12
0.17 0.21 0.25
UNR421F
0.37 0.47 0.57
UNR4211/4212/4213/421L
0.8 1.0 1.2
UNR421K
1.70 2.13 2.60
UNR421E
1.70 2.14 2.60
UNR421D
3.7 4.7 5.7
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S No-rank
hFE 160 to 260 210 to 340 290 to 460 160 to 460
2 SJH00020BED









No Preview Available !

UNR4212 Даташит, Описание, Даташиты
Common characteristics chart
PT Ta
400
UNR421x Series
300
200
100
0
0 40 80 120 160
Ambient temperature Ta (°C)
Characteristics charts of UNR4210
IC VCE
60
IB = 1.0 mA
0.9 mA
Ta = 25°C
0.8 mA
50
40
0.4 mA
30
0.5 mA
0.3 mA 0.6 mA
0.7 mA
0.1 mA
20
10
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
VCE(sat) IC
100 IC / IB = 10
10
1
Ta = 75°C
25°C
0.1
25°C
0.01
0.1
1 10
Collector current IC (mA)
100
hFE IC
400
VCE = 10 V
300
Ta = 75°C
25°C
200
25°C
100
0
1 10 100 1 000
Collector current IC (mA)
Cob VCB
6
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
0.1 1 10 100
Collector-base voltage VCB (V)
IO VIN
VIN IO
104
VO = 5 V
100
VO = 0.2 V
Ta = 25°C
Ta = 25°C
103 10
102 1
10 0.1
1
0.4 0.6 0.8 1.0 1.2 1.4
Input voltage VIN (V)
0.01
0.1
1 10
Output current IO (mA)
100
SJH00020BED
3










Скачать PDF:

[ UNR4212.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
UNR4210Silicon NPN epitaxial planar typePanasonic Semiconductor
Panasonic Semiconductor
UNR4211Silicon NPN epitaxial planar typePanasonic Semiconductor
Panasonic Semiconductor
UNR4212Silicon NPN epitaxial planar typePanasonic Semiconductor
Panasonic Semiconductor
UNR4213Silicon NPN epitaxial planar typePanasonic Semiconductor
Panasonic Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск