UNR4212 PDF даташит
Спецификация UNR4212 изготовлена «Panasonic Semiconductor» и имеет функцию, называемую «Silicon NPN epitaxial planar type». |
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Детали детали
Номер произв | UNR4212 |
Описание | Silicon NPN epitaxial planar type |
Производители | Panasonic Semiconductor |
логотип |
14 Pages
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Transistors with built-in Resistor
UNR421x Series (UN421x Series)
Silicon NPN epitaxial planar type
For digital circuits
4.0±0.2
2.0±0.2
Unit: mm
■ Features
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
• New S type package, allowing supply with the radial taping
■ Resistance by Part Number
• UNR4210 (UN4210)
(R1)
47 kΩ
• UNR4211 (UN4211)
10 kΩ
• UNR4212 (UN4212)
22 kΩ
• UNR4213 (UN4213)
47 kΩ
• UNR4214 (UN4214)
10 kΩ
• UNR4215 (UN4215)
10 kΩ
• UNR4216 (UN4216)
4.7 kΩ
• UNR4217 (UN4217)
22 kΩ
• UNR4218 (UN4218)
0.51 kΩ
• UNR4219 (UN4219)
1 kΩ
• UNR421D (UN421D)
47 kΩ
• UNR421E (UN421E)
47 kΩ
• UNR421F (UN421F)
4.7 kΩ
• UNR421K (UN421K)
10 kΩ
• UNR421L (UN421L)
4.7 kΩ
(R2)
10 kΩ
22 kΩ
47 kΩ
47 kΩ
5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
4.7 kΩ
4.7 kΩ
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Tstg
50
50
100
300
150
−55 to +150
Unit
V
V
mA
mW
°C
°C
0.75 max.
0.45+–00..1200
(2.5) (2.5)
123
Internal Connection
R1
B
R2
0.45+–00..1200
0.7±0.1
1: Emitter
2: Collector
3: Base
NS-B1 Package
C
E
Publication date: December 2003
Note) The part numbers in the parenthesis show conventional part number.
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UNR421x Series
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base UNR4210/4215/4216/4217
cutoff current UNR4213
VCBO
VCEO
ICBO
ICEO
IEBO
Conditions
IC = 10 µA, IE = 0
IC = 2 mA, IB = 0
VCB = 50 V, IE = 0
VCE = 50 V, IB = 0
VEB = 6 V, IC = 0
Min Typ Max Unit
50 V
50 V
0.1 µA
0.5 µA
0.01 mA
0.1
(Collector open) UNR4212/4214/421D/421E
0.2
UNR4211
UNR421F/421K
0.5
1.0
UNR4219
1.5
UNR4218/421L
Forward current UNR4218/421K/421L hFE VCE = 10 V, IC = 5 mA
transfer ratio UNR4219/421D/421F
2.0
20
30
UNR4211
UNR4212/421E
35
60
UNR4213/4214
UNR4210 */4215 */4216 */
4217 *
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
UNR4213/421K
VCE(sat)
VOH
VOL
UNR421D
UNR421E
Transition frequency
Input
UNR4218
resistance UNR4219
fT
R1
IC = 10 mA, IB = 0.3 mA
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
VCC = 5 V, VB = 2.5 V, RL = 1 kΩ
VCC = 5 V, VB = 3.5 V, RL = 1 kΩ
VCC = 5 V, VB = 10 V, RL = 1 kΩ
VCC = 5 V, VB = 6 V, RL = 1 kΩ
VCB = 10 V, IE = −2 mA, f = 200 MHz
80
160 460
0.25
4.9
0.2
150
−30% 0.51 +30%
1.0
V
V
V
MHz
kΩ
UNR4216/421F/421L
4.7
UNR4211/4214/4215/421K
10
UNR4212/4217
22
Resistance
ratio
UNR4210/4213/421D/421E
UNR4218/4219
UNR4214
R1/R2
47
0.08 0.10 0.12
0.17 0.21 0.25
UNR421F
0.37 0.47 0.57
UNR4211/4212/4213/421L
0.8 1.0 1.2
UNR421K
1.70 2.13 2.60
UNR421E
1.70 2.14 2.60
UNR421D
3.7 4.7 5.7
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S No-rank
hFE 160 to 260 210 to 340 290 to 460 160 to 460
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Common characteristics chart
PT Ta
400
UNR421x Series
300
200
100
0
0 40 80 120 160
Ambient temperature Ta (°C)
Characteristics charts of UNR4210
IC VCE
60
IB = 1.0 mA
0.9 mA
Ta = 25°C
0.8 mA
50
40
0.4 mA
30
0.5 mA
0.3 mA 0.6 mA
0.7 mA
0.1 mA
20
10
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
VCE(sat) IC
100 IC / IB = 10
10
1
Ta = 75°C
25°C
0.1
−25°C
0.01
0.1
1 10
Collector current IC (mA)
100
hFE IC
400
VCE = 10 V
300
Ta = 75°C
25°C
200
−25°C
100
0
1 10 100 1 000
Collector current IC (mA)
Cob VCB
6
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
0.1 1 10 100
Collector-base voltage VCB (V)
IO VIN
VIN IO
104
VO = 5 V
100
VO = 0.2 V
Ta = 25°C
Ta = 25°C
103 10
102 1
10 0.1
1
0.4 0.6 0.8 1.0 1.2 1.4
Input voltage VIN (V)
0.01
0.1
1 10
Output current IO (mA)
100
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