DataSheet26.com

Q62702-C1889 PDF даташит

Спецификация Q62702-C1889 изготовлена ​​​​«Siemens Semiconductor Group» и имеет функцию, называемую «PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)».

Детали детали

Номер произв Q62702-C1889
Описание PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
Производители Siemens Semiconductor Group
логотип Siemens Semiconductor Group логотип 

8 Pages
scroll

No Preview Available !

Q62702-C1889 Даташит, Описание, Даташиты
PNP Silicon AF Transistors
BC 856 ... BC 860
Features
q For AF input stages and driver applications
q High current gain
q Low collector-emitter saturation voltage
q Low noise between 30 Hz and 15 kHz
q Complementary types: BC 846, BC 847,
BC 849, BC 850 (NPN)
Type
BC 856 A
BC 856 B
BC 857 A
BC 857 B
BC 857 C
BC 858 A
BC 858 B
BC 858 C
BC 859 A
BC 859 B
BC 859 C
BC 860 B
BC 860 C
Marking
3As
3Bs
3Es
3Fs
3Gs
3Js
3Ks
3Ls
4As
4Bs
4Cs
4Fs
4Gs
Ordering Code
(tape and reel)
Q62702-C1773
Q62702-C1886
Q62702-C1850
Q62702-C1688
Q62702-C1851
Q62702-C1742
Q62702-C1698
Q62702-C1507
Q62702-C1887
Q62702-C1774
Q62702-C1761
Q62702-C1888
Q62702-C1889
Pin Configuration
123
BEC
Package1)
SOT-23
1)For detailed information see chapter Package Outlines.
Semiconductor Group
1
04.96









No Preview Available !

Q62702-C1889 Даташит, Описание, Даташиты
BC 856 ... BC 860
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Peak base current
Peak emitter current
Total power dissipation, TS = 71 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient1)
Junction - soldering point
Symbol
VCE0
VCB0
VCES
VEB0
IC
ICM
IBM
IEM
Ptot
Tj
Tstg
Values
BC 856 BC 857 BC 858
BC 860 BC 859
65 45 30
80 50 30
80 50 30
55 5
100
200
200
200
330
150
– 65 … + 150
Unit
V
mA
mW
˚C
Rth JA
Rth JS
310
240
K/W
1)Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
2









No Preview Available !

Q62702-C1889 Даташит, Описание, Даташиты
BC 856 ... BC 860
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
IC = 10 mA
BC 856
BC 857, BC 860
BC 858, BC 859
Collector-base breakdown voltage
IC = 10 µA
BC 856
BC 857, BC 860
BC 858, BC 859
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0
BC 856
BC 857, BC 860
BC 858, BC 859
Emitter-base breakdown voltage
IE = 1 µA
Collector cutoff current
VCB = 30 V
VCB = 30 V, TA = 150 ˚C
DC current gain
IC = 10 µA, VCE = 5 V
BC 856 A … BC 859 A
BC 856 B … BC 860 B
BC 857 C … BC 860 C
IC = 2 mA, VCE = 5 V
BC 856 A … BC 859 A
BC 856 B … BC 860 B
BC 857 C … BC 860 C
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base-emitter voltage
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
1)Pulse test: t 300 µs, D = 2 %.
V(BR)CE0
V
65 –
45 –
30 –
V(BR)CB0
80
50
30
V(BR)CES
80
50
30
V(BR)EB0 5 – –
ICB0
– 1 15 nA
– – 4 µA
hFE
– 140 –
– 250 –
– 480 –
125 180 250
220 290 475
420 520 800
VCEsat
mV
75 300
250 650
VBEsat
700 –
850 –
VBE(on)
600 650 750
– – 820
Semiconductor Group
3










Скачать PDF:

[ Q62702-C1889.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
Q62702-C1884NPN Silicon AF Transistors (For AF input stages and driver applications High current gain)Siemens Semiconductor Group
Siemens Semiconductor Group
Q62702-C1885NPN Silicon AF Transistors (For AF input stages and driver applications High current gain)Siemens Semiconductor Group
Siemens Semiconductor Group
Q62702-C1886PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)Siemens Semiconductor Group
Siemens Semiconductor Group
Q62702-C1887PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)Siemens Semiconductor Group
Siemens Semiconductor Group

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск