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PTF211802A PDF даташит

Спецификация PTF211802A изготовлена ​​​​«Infineon Technologies AG» и имеет функцию, называемую «LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz».

Детали детали

Номер произв PTF211802A
Описание LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
Производители Infineon Technologies AG
логотип Infineon Technologies AG логотип 

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PTF211802A Даташит, Описание, Даташиты
PTF211802
LDMOS RF Power Field Effect Transistor
180 W, 2110–2170 MHz
Description
Features
The PTF211802 is a 180 W, internally matched, laterally double–diffused,
GOLDMOS push–pull FET intended for WCDMA applications from 2110 to
2170 MHz. Full gold metallization ensures excellent device lifetime and
reliability.
Two–Carrier WCDMA Drive–Up
VDD = 28 V, IDQ = 2.0 A,
f1 = 2140 MHz, f2 = 2150 MHz, 3GPP
WCDMA signal, P/A R = 8 dB, 3.84 MHz BW
35 -30
30 -35
25 Gain Drain Efficiency
IM3
20
-40
-45
• Broadband internal matching
• Typical two–carrier WCDMA performance
- Average output power = 38 W
- Gain = 15 dB
- Efficiency = 25%
- IM3 = –37 dBc
- ACPR < –42 dBc
• Typical CW performance
- Output power at P–1dB = 180 W
- Efficiency = 50%
• Integrated ESD protection: Human Body
Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
180 W (CW) output power
15
10
5
35
-50
ACPR
37 39 41 43 45
Output Power (dBm), Average
-55
-60
47
PTF211802A
Package 20275
PTF211802E
Package 30275
ESD: Electrostatic discharge sensitive device — observe handling precautions!
RF Characteristics at TCASE = 25°C unless otherwise indicated
WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 2.0 A, POUT = 38 W AVG
f1 = 2140 MHz, f2 = 2150 MHz, two–carrier 3GPP, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic
Intermodulation Distortion
Gain
Drain Efficiency
Symbol
IM3
Gps
ηD
Two–Tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 2.0 A, POUT = 60 W PEP, f = 2110 MHz, tone spacing = 5 MHz
Characteristic
Symbol
Gain
Drain Efficiency
Intermodulation Distortion
Gps
ηD
IMD
Min
Min
12.5
20
Typ
–37
15
25
Typ
15
22
–40
Max
Units
dBc
dB
%
Max
–38
Units
dB
%
dBc
Data Sheet 1 2004-02-13









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PTF211802A Даташит, Описание, Даташиты
PTF211802
DC Characteristics at TCASE = 25°C unless otherwise indicated
Characteristic
Drain–Source Breakdown Voltage
Drain Leakage Current
On–State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 µA/side
VDS = 28 V, VGS = 0 V
VGS = 10 V, VDS = 0.1 V
VDS = 28 V, IDQ = 1.0 A/side
VGS = 10 V, VDS = 0 V
Symbol
V(BR)DSS
IDSS
RDS(on)
VGS
IGSS
Maximum Ratings
Parameter
Drain–Source Voltage
Gate–Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance
(TCASE = 70°C, 130 W CW)
PTF211802A
PTF211802E
PTF211802A
PTF211802E
Symbol
VDSS
VGS
TJ
PD
PD
TSTG
RθJC
RθJC
Typical Performance (data taken in a production test fixture)
Min Typ
65 —
——
— 0.1
2.5 3.2
——
Max
1.0
4
1.0
Value
65
–0.5 to +12
200
498
2.85
647
3.70
–40 to +150
0.35
0.27
Units
V
µA
V
µA
Unit
V
V
°C
W
W/°C
W
W/°C
°C
°C/W
°C/W
Broadband Performance
VDD = 28 V, IDQ = 2.0 A, POUT = 38 W
40 0
35 Return Loss -5
30
Ef f iciency
25
-10
-15
20 -20
15
Gain
10
-25
-30
5
2080
2100
2120 2140 2160
Frequency (MHz)
2180
-35
2200
Data Sheet
2
Power Sweep, under Pulsed Conditions
VDD = 28 V, IDQ = 2.0 A, f = 2140 MHz,
pulse period = 1 ms, 0.8% duty cycle
58
Ideal
56
P-1dB = 52.8 dBm
54
52
Actual
50
48 P-3dB = 53.6 dBm
46
30 32 34 36 38 40 42 44
Input Power (dBm)
2004-02-13









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PTF211802A Даташит, Описание, Даташиты
PTF211802
Typical Performance (cont.)
Intermodulation Distortion vs. Output Power
for selected currents
VDD = 28 V, f = 2140 MHz, tone spacing = 5 MHz
-20
-25
-30 1.6 A
-35 2.4 A
2.0 A
-40
-45
-50
-55
-60
1.8 A
-65
2.2 A
39 41 43 45 47 49 51 53 55
Output Power (dBm), PEP
Intermodulation Distortion Products
vs. Tone Spacing
VDD = 28 V, IDQ = 2.0 A, POUT (PEP) = 170 W, f = 2140 MHz
-20
-25 3rd Order
-30
5th
-35
-40
-45
7th
-50
-55
-60
0 5 10 15 20 25 30
Tone Spacing (MHz)
Two–Tone Drive–Up
VDD = 28 V, IDQ = 2.0 A, f = 2140 MHz,
tone spacing = 5 MHz
45
40
35
30
25
20
15
10
5
42
-20
Ef f iciency
-25
IM3 -30
-35
-40
IM5
-45
IM7 -50
-55
44 46 48 50 52
Output Power (dBm), PEP
-60
54
Single–Carrier WCDMA Drive–Up
VDD = 28 V, IDQ = 2.0 A, f = 2140 MHz,
3GPP WCDMA signal, Test Model 1 w /16 DPCH,
67% clipping, P/A R = 8.7 dB, 3.84 MHz BW
30 -30
Drain Efficiency
25 -35
20
Gain
15
10
ACPR
-40
-45
-50
5 -55
0 -60
37 38 39 40 41 42 43 44 45 46 47
Output Power (dBm), Avg.
Data Sheet 3 2004-02-13










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Номер в каталогеОписаниеПроизводители
PTF211802LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHzInfineon Technologies AG
Infineon Technologies AG
PTF211802ALDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHzInfineon Technologies AG
Infineon Technologies AG
PTF211802ELDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHzInfineon Technologies AG
Infineon Technologies AG

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