PDF PTF210901E Data sheet ( Hoja de datos )

Número de pieza	PTF210901E
Descripción	LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz
Fabricantes	Infineon Technologies AG
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No Preview Available ! PTF210901 LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz Description Features The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Two–Carrier WCDMA Drive–Up VDD = 28 V, IDQ = 1050 mA, f1 = 2140 MHz, f2 = 2150 MHz, 3GPP WCDMA signal, P/A R = 8.0 dB, 3.84 MHz BW -25 30 Drain Efficiency -30 25 IM3 -35 20 -40 -45 Gain -50 ACPR 15 10 -55 5 39 40 41 42 43 44 Output Power, Avg. (dBm) • Internal matching for wideband performance • Typical two–carrier 3GPP WCDMA performance - Average output power = 19 W at –37 dBc - Efficiency = 25% • Typical CW performance - Output power at P–1dB = 105 W - Gain = 15 dB - Efficiency = 53% • Integrated ESD protection: Human Body Model, Class 1 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR at 28 V, 90 W (CW) output power PTF210901E Package 30248 ESD: Electrostatic discharge sensitive device — observe handling precautions! RF Performance at TCASE = 25°C unless otherwise indicated WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 1050 mA, POUT = 19 W AVG f1 = 2140 MHz, f2 = 2150 MHz, 3GPP signal, channel bandwidth 3.84 MHz, 8.0 dB peak/average @ 0.01% CCDF Characteristic Intermodulation Distortion Gain Drain Efficiency Symbol Min Typ IMD — –37 Gps — 15 ηD — 25 Max Units — dBc — dB —% Two–Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 1050 mA, POUT = 90 W PEP, f = 2170 MHz, tone spacing = 1 MHz Characteristic Gain Drain Efficiency Intermodulation Distortion Symbol Min Typ Gps ηD IMD 13.5 15 36 38 — –30 Max — — –28 Units dB % dBc Data Sheet 1 2004-01-16 1 page Test Circuit PTF210901 Reference Circuit Schematic for f = 2140 MHz Circuit Information DUT PTF210901E PCB 0.76 mm [0.030"] thick, εr = 4.5 Microstrip l1 l2 l3 l4 l5 l6 l7, l8 l9 l10 l11 l12 Value at 2140 MHz 0.375 λ, 50 Ω 0.199 λ, 39.2 Ω 0.015 λ, 11.5 Ω 0.037 λ, 60.4 Ω 0.195 λ, 60.4 Ω 0.073 λ, 7.5 Ω 0.199 λ, 55.4 Ω 0.049 λ, 4.98 Ω 0.089 λ, 4.98 Ω 0.151 λ, 41.9 Ω 0.381 λ, 50 Ω LDMOS Transistor 2 oz. copper TMM4 Dimensions: L x W (mm.) 28.45 x 1.40 14.83 x 2.06 1.07 x 10.06 2.90 x 0.97 15.11 x 0.97 4.98 x 17.73 15.32 x 1.14 3.30 x 25.17 5.99 x 25.17 11.30 x 1.85 29.13 x 1.40 Dimensions: L x W (in.) 1.120 x 0.055 0.584 x 0.081 0.042 x 0.396 0.114 x 0.038 0.595 x 0.038 0.196 x 0.698 0.603 x 0.045 0.130 x 0.991 0.236 x 0.991 0.445 x 0.073 1.147 x 0.055 Data Sheet 5 2004-01-16 5 Page

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Número de pieza	Descripción	Fabricantes
PTF210901	LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz	Infineon Technologies AG
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