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даташит PTF210451E PDF ( Datasheet )

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Номер произв PTF210451E
Описание LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz
Производители Infineon Technologies AG
логотип Infineon Technologies AG логотип 



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PTF210451E Даташит, Описание, Даташиты
PTF210451
LDMOS RF Power Field Effect Transistor
45 W, 2110–2170 MHz
Description
The PTF210451 is a 45 W internally matched GOLDMOS FET
intended for WCDMA applications from 2110 to 2170 MHz. Full gold
metallization ensures excellent device lifetime and reliability.
Two–Carrier WCDMA Drive-Up
VDD = 28 V, IDQ = 500 mA, f = 2140 MHz, 3GPP WCDMA
signal, P/A R = 8 dB, 10 MHz carrier spacing
-30
Ef f icienc y
-35
30
25
-40
A CPR
-45 IM3
20
15
-50 10
Features
• Internal matching for wideband performance
• Typical two–carrier WCDMA performance
- Average output power = 11.5 W
- Gain = 14 dB
- Efficiency = 27%
- IM3 = –37 dBc
• Typical CW performance
- Output power at P–1dB = 50 W
- Linear gain = 14 dB
- Efficiency = 53%
• Integrated ESD protection: Human Body Model,
Class 1 (minimum)
• Excellent thermal stability
• Low HCI Drift
• Capable of handling 10:1 VSWR @ 28 V,
45 W (CW) output power
-55
30
32 34 36 38 40
Average Output Power (dBm)
5
42
PTF210451E
Package 30265
ESD: Electrostatic discharge sensitive device — observe handling precautions!
RF Performance at TCASE = 25°C unless otherwise indicated
WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 500 mA, POUT = 11.5 W AVG
f1 = 2140 MHz, f2 = 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic
Intermodulation Distortion
Gain
Drain Efficiency
Symbol
IMD
Gps
ηD
Min
Two–Tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 500 mA, POUT = 45 W PEP, f = 2170 MHz, Tone Spacing = 1 MHz
Typ
–37
14
27
Max Units
— dBc
— dB
—%
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
Gps
ηD
IMD
13 14
35 38
— –32
Max
–30
Units
dB
%
dBc
Data Sheet 1 2003-12-22









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PTF210451E Даташит, Описание, Даташиты
PTF210451
DC Characteristics at TCASE = 25°C unless otherwise indicated
Characteristic
Drain–Source Breakdown Voltage
Drain Leakage Current
On–State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
VGS = 0 V, ID = 10 µA
VDS = 28 V, VGS = 0 V
VGS = 10 V, VDS = 0.1 V
VDS = 28 V, IDQ = 500 mA
VGS = 10 V, VDS = 0 V
Symbol
V(BR)DSS
IDSS
RDS(on)
VGS
IGSS
Min
65
2.5
Typ
0.2
3.2
Max
1.0
4.0
1.0
Units
V
µA
V
µA
Maximum Ratings
Parameter
Drain–Source Voltage
Gate–Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (TCASE = 70°C, 45 W CW)
Symbol
VDSS
VGS
TJ
PD
TSTG
RθJC
Value
65
–0.5 to +12
200
175
1.0
–40 to +150
1.0
Unit
V
V
°C
W
W/°C
°C
°C/W
Typical Performance (data taken in production test fixture)
Broadband Performance
VDD = 28 V, IDQ = 500 mA, POUT = 40 dBm
30
25 Efficiency
20
15
Gain
10
5
0
2070
Input Retrun Loss
2105
2140
2175
Frequency (MHz)
0
-5
-10
-15
-20
-25
-30
2210
Power Sweep, CW Conditions
VDD = 28 V, IDQ = 500 mA, f = 2170 MHz
17 60
Ef f iciency
16 50
15
Gain
14
40
30
13 20
12 10
34 36 38 40 42 44 46 48
Output Power (dBm)
Data Sheet 2 2003-12-22









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PTF210451E Даташит, Описание, Даташиты
Typical Performance (cont.)
Intermodulation Distortion vs. Output Power
for selected currents
VDD = 28 V, f = 2140 MHz, tone spacing = 1 MHz
-30
-35
-40
0.60 A
-45
0.40 A
-50
-55 0.45 A
0.50 A
0.55 A
-60
34 36 38 40 42 44 46
Output Power, PEP (dBm)
48
PTF210451
Intermodulation Distortion Products
vs. Tone Spacing
VDD = 28 V, IDQ = 500 mA, f = 2140 MHz,
POUT = 45 W PEP
-25
-30 3rd Order
-35
-40 5th Order
-45
-50 7th Order
-55
-60
0
10 20 30
Tone Spacing (MHz)
40
Two–Tone Drive–Up
VDD = 28 V, IDQ = 500 mA, f = 2140 MHz,
tone spacing = 1MHz
-25 45
-30 40
Ef f iciency
-35 35
-40 30
-45
IM3
-50
25
20
-55
IM5
-60
15
IM7 10
-65 5
34 36 38 40 42 44 46 48
Peak Output Power (dBm)
Single–Carrier WCDMA Drive–Up
VDD = 28 V, IDQ = 500 mA, f = 2140 MHz, 3GPP WCDMA
signal, Test Model 1 w/16 DPCH, 67% clipping,
P/A R = 8.7 dB, 3.84 MHz BW
-35 30
Ef f iciency
-40 25
-45 20
-50
-55
-60
30
15
ACPR Up 10
ACPR Low
5
32 34 36 38 40 42
Avgerage Output Power (dBm)
Data Sheet 3 2003-12-22










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