PDF PTF210451E Data sheet ( Hoja de datos )

Número de pieza	PTF210451E
Descripción	LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz
Fabricantes	Infineon Technologies AG
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No Preview Available ! PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Two–Carrier WCDMA Drive-Up VDD = 28 V, IDQ = 500 mA, f = 2140 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing -30 Ef f icienc y -35 30 25 -40 A CPR -45 IM3 20 15 -50 10 Features • Internal matching for wideband performance • Typical two–carrier WCDMA performance - Average output power = 11.5 W - Gain = 14 dB - Efficiency = 27% - IM3 = –37 dBc • Typical CW performance - Output power at P–1dB = 50 W - Linear gain = 14 dB - Efficiency = 53% • Integrated ESD protection: Human Body Model, Class 1 (minimum) • Excellent thermal stability • Low HCI Drift • Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power -55 30 32 34 36 38 40 Average Output Power (dBm) 5 42 PTF210451E Package 30265 ESD: Electrostatic discharge sensitive device — observe handling precautions! RF Performance at TCASE = 25°C unless otherwise indicated WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 500 mA, POUT = 11.5 W AVG f1 = 2140 MHz, f2 = 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF Characteristic Intermodulation Distortion Gain Drain Efficiency Symbol IMD Gps ηD Min — — — Two–Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 500 mA, POUT = 45 W PEP, f = 2170 MHz, Tone Spacing = 1 MHz Typ –37 14 27 Max Units — dBc — dB —% Characteristic Gain Drain Efficiency Intermodulation Distortion Symbol Min Typ Gps ηD IMD 13 14 35 38 — –32 Max — — –30 Units dB % dBc Data Sheet 1 2003-12-22 1 page Test Circuit PTF210451 Test Circuit Schematic for 2170 MHz Circuit Assembly Information DUT Circuit Board PTF210451E ε0.79 mm. [.031”] thick, r = 4.5 210451E SCHEMATIC DWG FOR DATA SHEET.dwg LDMOS Transistor Rogers TMM4, 2 oz. copper Microstrip l1 l2 l3 l4 l5 l6 l7 l8 l9 l10 l11 l12 Electrical Characteristics at 2170 MHz 0.047 λ, 45 Ω 0.040 λ, 23 Ω 0.132 λ, 66 Ω 0.028 λ, 45 Ω 0.018 λ, 12 Ω 0.074 λ, 7 Ω 0.152 λ, 9 Ω 0.257 λ, 68 Ω 0.027 λ, 44 Ω 0.056 λ, 56 Ω 0.036 λ, 19 Ω 0.076 λ, 44 Ω Dimensions: L x W (mm.) 3.48 x 1.78 2.87 x 4.57 10.08 x 0.89 2.08 x 1.78 26.67 x 10.06 4.98 x 17.68 10.34 x 13.56 19.76 x 0.84 1.98 x 1.83 4.22 x 1.22 2.57 x 5.74 5.64 x 1.80 Dimensions: L x W (in.) 0.137 x 0.070 0.113 x 0.180 0.397 x 0.035 0.082 x 0.070 1.050 x 0.396 0.196 x 0.696 0.407 x 0.534 0.778 x 0.033 0.078 x 0.072 0.166 x 0.048 0.101 x 0.226 0.222 x 0.071 Data Sheet 5 2003-12-22 5 Page

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Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
PTF210451	LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz	Infineon Technologies AG
PTF210451E	LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz	Infineon Technologies AG

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