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Número de pieza | PTF210451 | |
Descripción | LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz | |
Fabricantes | Infineon Technologies AG | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PTF210451 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! PTF210451
LDMOS RF Power Field Effect Transistor
45 W, 2110–2170 MHz
Description
The PTF210451 is a 45 W internally matched GOLDMOS FET
intended for WCDMA applications from 2110 to 2170 MHz. Full gold
metallization ensures excellent device lifetime and reliability.
Two–Carrier WCDMA Drive-Up
VDD = 28 V, IDQ = 500 mA, f = 2140 MHz, 3GPP WCDMA
signal, P/A R = 8 dB, 10 MHz carrier spacing
-30
Ef f icienc y
-35
30
25
-40
A CPR
-45 IM3
20
15
-50 10
Features
• Internal matching for wideband performance
• Typical two–carrier WCDMA performance
- Average output power = 11.5 W
- Gain = 14 dB
- Efficiency = 27%
- IM3 = –37 dBc
• Typical CW performance
- Output power at P–1dB = 50 W
- Linear gain = 14 dB
- Efficiency = 53%
• Integrated ESD protection: Human Body Model,
Class 1 (minimum)
• Excellent thermal stability
• Low HCI Drift
• Capable of handling 10:1 VSWR @ 28 V,
45 W (CW) output power
-55
30
32 34 36 38 40
Average Output Power (dBm)
5
42
PTF210451E
Package 30265
ESD: Electrostatic discharge sensitive device — observe handling precautions!
RF Performance at TCASE = 25°C unless otherwise indicated
WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 500 mA, POUT = 11.5 W AVG
f1 = 2140 MHz, f2 = 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic
Intermodulation Distortion
Gain
Drain Efficiency
Symbol
IMD
Gps
ηD
Min
—
—
—
Two–Tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 500 mA, POUT = 45 W PEP, f = 2170 MHz, Tone Spacing = 1 MHz
Typ
–37
14
27
Max Units
— dBc
— dB
—%
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
Gps
ηD
IMD
13 14
35 38
— –32
Max
—
—
–30
Units
dB
%
dBc
Data Sheet 1 2003-12-22
1 page Test Circuit
PTF210451
Test Circuit Schematic for 2170 MHz
Circuit Assembly Information
DUT
Circuit Board
PTF210451E
ε0.79 mm. [.031”] thick, r = 4.5
210451E SCHEMATIC DWG FOR DATA SHEET.dwg
LDMOS Transistor
Rogers TMM4, 2 oz. copper
Microstrip
l1
l2
l3
l4
l5
l6
l7
l8
l9
l10
l11
l12
Electrical Characteristics at 2170 MHz
0.047 λ, 45 Ω
0.040 λ, 23 Ω
0.132 λ, 66 Ω
0.028 λ, 45 Ω
0.018 λ, 12 Ω
0.074 λ, 7 Ω
0.152 λ, 9 Ω
0.257 λ, 68 Ω
0.027 λ, 44 Ω
0.056 λ, 56 Ω
0.036 λ, 19 Ω
0.076 λ, 44 Ω
Dimensions: L x W (mm.)
3.48 x 1.78
2.87 x 4.57
10.08 x 0.89
2.08 x 1.78
26.67 x 10.06
4.98 x 17.68
10.34 x 13.56
19.76 x 0.84
1.98 x 1.83
4.22 x 1.22
2.57 x 5.74
5.64 x 1.80
Dimensions: L x W (in.)
0.137 x 0.070
0.113 x 0.180
0.397 x 0.035
0.082 x 0.070
1.050 x 0.396
0.196 x 0.696
0.407 x 0.534
0.778 x 0.033
0.078 x 0.072
0.166 x 0.048
0.101 x 0.226
0.222 x 0.071
Data Sheet 5 2003-12-22
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet PTF210451.PDF ] |
Número de pieza | Descripción | Fabricantes |
PTF210451 | LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz | Infineon Technologies AG |
PTF210451E | LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz | Infineon Technologies AG |
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