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PTF210301E PDF даташит

Спецификация PTF210301E изготовлена ​​​​«Infineon Technologies AG» и имеет функцию, называемую «LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz».

Детали детали

Номер произв PTF210301E
Описание LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz
Производители Infineon Technologies AG
логотип Infineon Technologies AG логотип 

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PTF210301E Даташит, Описание, Даташиты
PTF210301
LDMOS RF Power Field Effect Transistor
30 W, 2110–2170 MHz
Description
Features
The PTF210301 is a 30 W, internally matched GOLDMOS FET intended
for WCDMA applications from 2110 to 2170 MHz. Full gold metallization
ensures excellent device lifetime and reliability.
Two–Carrier WCDMA Drive–Up
f = 2140 MHz, 3GPP WCDMA Signal, P/A R = 8 dB,
10 MHz Carrier Spacing, VDD = 28 V, IDQ = 380 mA
-25 30
Ef f ic ienc y
-30 25
-35 20
-40 IM3
15
-45 10
• Broadband internal matching
• Typical two–carrier WCDMA performance
- Average output power = 7.0 W
- Gain = 16 dB
- Efficiency = 25%
- IM3 = –37 dBc
• Typical CW performance
- Output power at P–1dB = 36 W
- Gain = 15 dB
- Efficiency = 53%
• Integrated ESD protection: Human Body
Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
30 W (CW) output power
-50
-55
30
ACPR
32 34 36 38
Average Output Power (dBm)
5
0
40
PTF210301A
Package 20265
PTF210301E
Package 30265
RF Characteristics at TCASE = 25°C unless otherwise indicated
WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 380 mA, POUT = 36.5 dBm
f1 = 2140 MHz, f2 = 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic
Intermodulation Distortion
Gain
Drain Efficiency
Symbol Min Typ
IMD
Gps
hD
— –44
— 16
— 20
Max Units
— dBc
— dB
—%
Two–Tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 380 mA, POUT = 9 W PEP, f = 2170 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
Gps
ηD
IMD
ESD: Electrostatic discharge sensitive device — observe handling precautions!
Data Sheet
1
Min
14.5
15
Typ
16
18
–47
Max
–42
Units
dB
%
dBc
2003-12-22









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PTF210301E Даташит, Описание, Даташиты
PTF210301
DC Characteristics at TCASE = 25°C unless otherwise indicated
Characteristic
Drain–Source Breakdown Voltage
Drain Leakage Current
On–State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 µA
VDS = 28 V, VGS = 0 V
VGS = 10 V, VDS = 0.1 V
VDS = 28 V, IDQ = 380 mA
VGS = 10 V, VDS = 0 V
Symbol
V(BR)DSS
IDSS
RDS(on)
VGS
IGSS
Maximum Ratings
Parameter
Drain–Source Voltage
Gate–Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance
(TCASE = 70°C, 30 W CW)
PTF210301A
PTF210301E
PTF210301A
PTF210301E
Symbol
VDSS
VGS
TJ
PD
PD
TSTG
RθJC
RθJC
Typical Performance (data taken in a production test fixture)
Min Typ
65 —
——
— 0.26
2.5 3.2
——
Max
1.0
4
1.0
Value
65
–0.5 to +12
200
116
0.67
145
0.83
–40 to +150
1.5
1.2
Units
V
µA
V
µA
Unit
V
V
°C
W
W/°C
W
W/°C
°C
°C/W
°C/W
Broadband Performance
VDD = 28 V, IDQ = 380 mA, POUT = 39.5 dBm
35 0
30
Ef f iciency
25
-5
Return Loss -10
20
15 Gain
-15
-20
Power Sweep, CW Conditions
VDD = 28 V, IDQ = 380 mA, f = 2170 MHz
18 55
Ef f iciency
17 45
16
Gain
15
35
25
14 15
10 -25
2070 2090 2110 2130 2150 2170 2190 2210
Frequency (MHz)
13
0
10 20 30
Output Power (W)
5
40
Data Sheet 2 2003-12-22









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PTF210301E Даташит, Описание, Даташиты
Typical Performance (cont.)
Intermodulation Distortion vs. Output Power
VDD = 28 V, f = 2140 MHz, Tone Spacing = 1 MHz
-25
-30
455 mA
-35 420 mA
-40
-45
-50
-55
-60
32
300 mA
345 mA
380 mA
34 36 38 40 42 44 46
Output Power, PEP (dBm)
PTF210301
Intermodulation Distortion Products
vs. Tone Spacing
VDD = 28V IDQ = 380 mA, f = 2140 MHz,
Output Power = 44.75 dBm PEP
-25
-30
-35 3rd Order
-40
-45 5th
-50
-55 7th
-60
-5
5 15 25
Tone Spacing (MHz)
35
Two–Tone Drive–Up at Optimum IDQ
VDD = 28 V, IDQ = 380 mA,
f = 2140 MHz, Tone Spacing = 1 MHz
-20 45
-25
Ef f iciency
IM3 40
-30 35
-35 IM5 30
-40 25
-45 20
-50 15
IM7
-55 10
-60 5
-65 0
32 36 40 44 48
Output Power, PEP (dBm)
Single–Carrier WCDMA Drive–Up
VDD = 28 V, IDQ = 380 mA, f = 2140 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH, 67%
Clipping, P/A R = 8.7 dB, 3.84 MHz BW
-35 30
Ef f iciency
-40
-45
ACPR Up
20
-50
10
ACPR Low
-55
-60
28
32 36
Average Output Power (dBm)
0
40
Data Sheet 3 2003-12-22










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Номер в каталогеОписаниеПроизводители
PTF210301LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHzInfineon Technologies AG
Infineon Technologies AG
PTF210301ALDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHzInfineon Technologies AG
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