PDF PTF210301A Data sheet ( Hoja de datos )

Número de pieza	PTF210301A
Descripción	LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz
Fabricantes	Infineon Technologies AG
Logotipo
Hay una vista previa y un enlace de descarga de PTF210301A (archivo pdf) en la parte inferior de esta página. Total 8 Páginas
No Preview Available ! PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description Features The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Two–Carrier WCDMA Drive–Up f = 2140 MHz, 3GPP WCDMA Signal, P/A R = 8 dB, 10 MHz Carrier Spacing, VDD = 28 V, IDQ = 380 mA -25 30 Ef f ic ienc y -30 25 -35 20 -40 IM3 15 -45 10 • Broadband internal matching • Typical two–carrier WCDMA performance - Average output power = 7.0 W - Gain = 16 dB - Efficiency = 25% - IM3 = –37 dBc • Typical CW performance - Output power at P–1dB = 36 W - Gain = 15 dB - Efficiency = 53% • Integrated ESD protection: Human Body Model, Class 1 (minimum) • Excellent thermal stability • Low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 30 W (CW) output power -50 -55 30 ACPR 32 34 36 38 Average Output Power (dBm) 5 0 40 PTF210301A Package 20265 PTF210301E Package 30265 RF Characteristics at TCASE = 25°C unless otherwise indicated WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 380 mA, POUT = 36.5 dBm f1 = 2140 MHz, f2 = 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF Characteristic Intermodulation Distortion Gain Drain Efficiency Symbol Min Typ IMD Gps hD — –44 — 16 — 20 Max Units — dBc — dB —% Two–Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 380 mA, POUT = 9 W PEP, f = 2170 MHz, tone spacing = 1 MHz Characteristic Gain Drain Efficiency Intermodulation Distortion Symbol Gps ηD IMD ESD: Electrostatic discharge sensitive device — observe handling precautions! Data Sheet 1 Min 14.5 15 — Typ 16 18 –47 Max — — –42 Units dB % dBc 2003-12-22 1 page Test Circuit PTF210301 ERS210301-1 Test Circit Schematic for f = 2170 MHz DUT PCB PTF210301 0.76 mm. [.030”] thick, εr = 4.5 LDMOS Transistor Rogers TMM4 2 oz. copper Microstrip l1 l2 l3 l4 l5 l6 l7 l8 l9 l10 l11 l12 l13 l14 Electrical Characteristics at 2170 MHz 0.102 λ, 50 Ω 0.078 λ, 22.8 Ω 0.098 λ, 42.8 Ω 0.053 λ, 11.6 Ω 0.136 λ, 74 Ω 0.373 λ, 54.5 Ω 0.054 λ, 11.6 Ω 0.047 λ, 18.2 Ω 0.019 λ, 28.5 Ω 0.019 λ, 14.3 Ω 0.110 λ, 50 Ω 0.087 λ, 50 Ω 0.152 λ, 52.7 Ω 0.340 λ, 50 Ω Dimensions: W x L (mm.) 7.62 x 1.42 5.51 x 4.45 7.24 x 1.83 3.61 x 10.03 10.16 x 0.66 27.94 x 1.19 3.68 x 10.03 3.30 x 5.84 1.37 x 3.30 1.32 x 7.87 8.26 x 1.42 6.48 x 1.42 11.43 x 1.27 25.40 x 1.42 Dimensions: W xL (in.) 0.300 x 0.056 0.217 x 0.175 0.285 x 0.072 0.142 x 0.395 0.400 x 0.026 1.100 x 0.047 0.145 x 0.395 0.130 x 0.230 0.054 x 0.130 0.052 x 0.310 0.325 x 0.056 0.255 x 0.056 0.450 x 0.050 1.000 x 0.056 Data Sheet 5 2003-12-22 5 Page

Páginas	Total 8 Páginas
PDF Descargar	[ Datasheet PTF210301A.PDF ]

Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
PTF210301	LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz	Infineon Technologies AG
PTF210301A	LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz	Infineon Technologies AG
PTF210301E	LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz	Infineon Technologies AG

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.

DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar