Datasheet PTF210301 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	PTF210301	LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • • Broadband in	Infineon Technologies AG	transistor
2	PTF210301A	LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • • Broadband in	Infineon Technologies AG	transistor
3	PTF210301E	LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • • Broadband in	Infineon Technologies AG	transistor

PTF Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	PTF	Metal Film Resistors www.vishay.com PTF Vishay Dale Metal Film Resistors, High Precision, High Stability FEATURES • Extremely low temperature coefficient of resistance • Very low noise and voltage coefficient • Very good high frequency characteristics • Can replace wirewound bobbins • Proprietary epoxy coat	Vishay	data
2	PTF080101	LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ	Infineon Technologies AG	transistor
3	PTF080101S	LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ	Infineon Technologies AG	transistor
4	PTF080451	LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz PTF080451 LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz Description The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • • B	Infineon Technologies AG	transistor
5	PTF080451E	LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz PTF080451 LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz Description The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • • B	Infineon Technologies AG	transistor
6	PTF080601	LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz Description The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Typ	Infineon Technologies AG	transistor
7	PTF080601A	LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz Description The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Typ	Infineon Technologies AG	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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