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PDF PTB20125 Data sheet ( Hoja de datos )
| Número de pieza | PTB20125 | |
| Descripción | 100 Watts/ 1.8-2.0 GHz PCN/PCS Power Transistor | |
| Fabricantes | Ericsson | |
| Logotipo |  |
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PTB 20125
100 Watts, 1.8–2.0 GHz
PCN/PCS Power Transistor
Description
The 20125 is an NPN, push-pull RF power transistor intended for 26
Vdc class AB operation from 1.8 to 2.0 GHz. Rated at 100 watts PEP
minimum output power, it is specifically intended for operation as a
final stage in CDMA or TDMA systems. Ion implantation, nitride surface
passivation and gold metallization ensure excellent device reliability.
100% lot traceability is standard.
100 Watts, 1.8–2.0 GHz
Class AB Characteristics
40% Collector Efficiency at 100 Watts
Gold Metallization
Silicon Nitride Passivated
Typical POUT, Gain & Efficiency (at P-1dB)
vs. Frequency
12
Output Power (W) 140
11
10
VCC = 26 V
9 ICQ = 200 mA
8
120
100
80
7 Gain (dB)
60
6
5
1750
1800
1850
1900
40
Efficiency (%)
20
1950 2000 2050
Frequency (MHz)
20125LOT CODE
Package 20225 *
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
Symbol
VCER
VCBO
VEBO
IC
PD
TSTG
RθJC
Value
55
55
4.0
14
400
2.3
–40 to +150
0.44
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
* This product not recommended or specified for CW or class A operation. Recommend two PTB 20175 for these applications.
5/19/98
1
1 page  
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Artwork (1 inch
)
PTB 20125
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: [email protected]
www.ericsson.com/rfpower
5
Specifications subject to change without notice.
L3
© 1996 Ericsson Inc.
EUS/KR 1301-PTB 20125 Uen Rev. C 09-28-98
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet PTB20125.PDF ] | |
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