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TM130EZ-M PDF даташит

Спецификация TM130EZ-M изготовлена ​​​​«Mitsubishi Electric Semiconductor» и имеет функцию, называемую «HIGH POWER GENERAL USE INSULATED TYPE».

Детали детали

Номер произв TM130EZ-M
Описание HIGH POWER GENERAL USE INSULATED TYPE
Производители Mitsubishi Electric Semiconductor
логотип Mitsubishi Electric Semiconductor логотип 

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TM130EZ-M Даташит, Описание, Даташиты
MITSUBISHI THYRISTOR MODULES
TM130RZ/EZ/GZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
TM130RZ/EZ/GZ-M,-H
(RZ Type)
IT (AV) Average on-state current .......... 130A
IF (AV) Average forward current .......... 130A
VRRM Repetitive peak reverse voltage
........ 400/800V
VDRM Repetitive peak off-state voltage
........ 400/800V
MIX DOUBLE ARMS
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
DC motor control, NC equipment, AC motor control, contactless switches,
electric furnace temperature control, light dimmers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
3–φ6.5
3–M8
A1 K1 K2 A2
18 16
18 16
30 32 30
68.5
68.5
150
K1
G1
Tab#110,
t=0.5
LABEL
(RZ Type)
(RZ)
A1
CR K1
A2
K2 SR
K1
G1
(EZ)
A1
CR
K1 K2
A2
SR K1
G1
(GZ)
A1
CR
K1 K2
A2
SR K1
G1
(Bold line is connective bar.)
Feb.1999









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TM130EZ-M Даташит, Описание, Даташиты
MITSUBISHI THYRISTOR MODULES
TM130RZ/EZ/GZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VRRM
VRSM
VR (DC)
VDRM
VDSM
VD (DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Voltage class
M
400
480
320
400
480
320
Symbol
Parameter
IT (RMS), IF (RMS) RMS current
IT (AV), IF (AV) Average current
ITSM, IFSM Surge (non-repetitive) current
I2t I2t for fusing
di/dt Critical rate of rise of on-state current
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VFGM
Peak gate forward voltage
VRGM
Peak gate reverse voltage
IFGM
Peak gate forward current
Tj Junction temperature
Tstg Storage temperature
Viso Isolation voltage
Conditions
Single-phase, half-wave 180° conduction, TC=85°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
VD=1/2VDRM, IG=1.0A, Tj=125°C
Charged part to case
— Mounting torque
Main terminal screw M8
Mounting screw M6
— Weight
Typical value
H
800
960
640
800
960
640
Ratings
205
130
2600
2.8 × 104
100
10
3.0
10
5.0
4.0
–40~125
–40~125
2500
8.83~10.8
90~110
1.96~3.92
20~40
300
Unit
V
V
V
V
V
V
Unit
A
A
A
A2s
A /µs
W
W
V
V
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IRRM
IDRM
VTM, VFM
dv/dt
VGT
VGD
IGT
Rth (j-c)
Rth (c-f)
Repetitive peak reverse current Tj=125°C, VRRM applied
Repetitive peak off-state current Tj=125°C, VDRM applied
Forward voltage
Tj=125°C, ITM=IFM=390A, instantaneous meas.
Critical rate of rise of off-state voltage Tj=125°C, VD=2/3VDRM
Gate trigger voltage
Tj=25°C, VD=6V, RL=2
Gate non-trigger voltage
Tj=125°C, VD=1/2VDRM
Gate trigger current
Tj=25°C, VD=6V, RL=2
Thermal resistance
Junction to case (per 1/2 module)
Contact thermal resistance
Case to fin, conductive grease applied (per 1/2 module)
— Insulation resistance
Measured with a 500V megohmmeter between main terminal
and case
Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.
Min.
500
0.25
15
Limits
Typ.
Max.
30
30
1.3
3.0
100
0.22
0.1
10 — —
Unit
mA
mA
V
V/µs
V
V
mA
°C/ W
°C/ W
M
Feb.1999









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TM130EZ-M Даташит, Описание, Даташиты
MITSUBISHI THYRISTOR MODULES
TM130RZ/EZ/GZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
MAXIMUM RATINGS
Item
Thyristor
Diode
VRRM
VRSM
VR (DC)
VDRM
VDSM
VD (DC)
IT (RMS)
IT (AV)
ITSM
I2t
di/dt
IF (RMS)
IF (AV)
IFSM
———
Item
Thyristor
Diode
PGM
PG (AV)
VFGM
IFGM
Tj
Tstg
————
ELECTRICAL CHARACTERISTICS
Item
Thyristor
Diode
IRRM
IDRM
VTM
VFM
dv/dt
VGT
VGD
IGT
Rth (j-c)
Rth (c-f)
PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTIC
10 4
7
5
3
2
10 2
7
5
3
2
10 2
7
5
3
2
10 1
0.4
Tj=125°C
0.8 1.2 1.6 2.0
FORWARD VOLTAGE (V)
2.4
GATE CHARACTERISTICS
4
3
2 VFGM=10V
10 1
7 VGT=3.0V
5
PGM=10W
3
2 Tj=25°C
10 0
7
5
IGT=
100mA
3
2
PG(AV)=
3.0W
10 –1
7
5
410 1 2 3
VGD=0.25V
5 710 2 2 3
IFGM=4.0A
5 7 10 3 2 3 5 7 10 4
GATE CURRENT (mA)
RATED SURGE (NON-REPETITIVE)
CURRENT
3200
2800
2400
2000
1600
1200
800
400
0
1 2 3 5 7 10 20 30 50 70100
CONDUCTION TIME (CYCLE AT 60Hz)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
10 0 2 3 5 7 10 1
0.25
0.20
0.15
0.10
0.05
0
10 –3 2 3 5 710 –2 2 3 5 710 –12 3 5 7 10 0
TIME (s)
Feb.1999










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