DataSheet26.com

TP3006 PDF даташит

Спецификация TP3006 изготовлена ​​​​«Motorola Inc» и имеет функцию, называемую «RF POWER TRANSISTOR NPN SILICON».

Детали детали

Номер произв TP3006
Описание RF POWER TRANSISTOR NPN SILICON
Производители Motorola Inc
логотип Motorola  Inc логотип 

6 Pages
scroll

No Preview Available !

TP3006 Даташит, Описание, Даташиты
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by TP3006/D
The RF Line
NPN Silicon
RF Power Transistor
The TP3006 is designed for cellular radio base station amplifiers up to 960
MHz. It incorporates high value emitter ballast resistors, gold metallizations and
offers a high degree of reliability and ruggedness. The TP3006 also features
input and output matching networks and high impedances. It can easily operate
in a full 870– 960 MHz bandwidth in a simple circuit.
Class AB Operation
Specified 26 Volts, 960 MHz Characteristics
Output Power — 5 Watts
Gain — 9 dB min
Efficiency — 45% min
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
TP3006
5 W, 870 – 960 MHz
RF POWER TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector–Current — Continuous
Storage Temperature Range
Operating Junction Temperature
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Symbol
VCER
VCBO
VEBO
IC
Tstg
TJ
PD
Value
45
55
3.5
2
– 40 to +100
200
25
0.14
Unit
Vdc
Vdc
Vdc
Adc
°C
°C
Watts
W/°C
CASE 319–07, STYLE 2
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (1)
Symbol
RθJC
Max
7
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 15 mA, RBE = 75 )
Emitter–Base Breakdown Voltage
(IE = 4 mAdc)
Collector–Base Breakdown Voltage
(IC = 15 mAdc)
Collector–Emitter Leakage
(VCE = 26 V, RBE = 75 )
V(BR)CER
V(BR)EBO
V(BR)CBO
ICER
45
3.5
55
— Vdc
— Vdc
— Vdc
4 mA
ON CHARACTERISTICS
DC Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc)
hFE 15 — 100 —
NOTE:
(continued)
1. Thermal resistance is determined under specified RF operating condition at temperature test point (see drawing of the package).
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
TP3006
1









No Preview Available !

TP3006 Даташит, Описание, Даташиты
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 26 V, IE = 0, f = 1 MHz )
Cob — 8.5 — pF
FUNCTIONAL TESTS IN CW
Common–Emitter Amplifier Power Gain
(VCC = 26 V, Pout = 5 W, ICQ = 50 mA, f = 960 MHz)
Gp 9 10.5 — dB
Collector Efficiency
(VCC = 26 V, Pout = 5 W, IQ = 50 mA, f = 960 MHz)
h 45 50 — %
Input Overdrive (no degradation in Pout)
(VCC = 26 V, IQ = 50 mA, f = 960 MHz)
Pin 3 — — dB
FUNCTIONAL TESTS IN 2 TONES
3rd Order Intermodulation
(VCC = 26 V, Ppeak= 5 W, ICQ = 50 mA, f = 900 MHz)
IMD3 — – 46 —
dB
5th Order Intermodulation
(VCC = 26 V, Ppeak= 5 W, ICQ = 50 mA, f = 900 MHz)
IMD5 — – 46 —
dB
TP3006
2
f = 870 MHz
Zin
Zo = 10
ZOL
f = 870 MHz
960
960
Pout = 5 W (CW), VCE = 26 V, ICQ = 50 mA
f
(MHz)
Zin
()
ZOL
()
870 6.26 – j6.40 5.22 + j9.47
900 7.40 – j12.3 4.17+ j9.02
960 14.8 – j12.9 4.21 + j9.91
Figure 1. Series Equivalent Input and Output Impedances
MOTOROLA RF DEVICE DATA









No Preview Available !

TP3006 Даташит, Описание, Даташиты
T2
T1
C5 +VCC
+
C4 R3 C9
R2 D1
C8
D2* C6
C3 R1
C7
RF INPUT
C1
*CONTACT WITH RF TRANSISTOR
50
DUT
RF OUTPUT
C2
50
C1
C2,C3
C4,C7
C5,C9
C6,C8
D1,D2
22 pF, 5%, Chip Capacitor 0805
330 pF, Chip Capacitor 0805
15 nF, 5%, Chip Capacitor 0805
6.8 F, 35 V, Chip Capacitor 0805
330 pF, Chip Capacitor 0805
SMD Diode
R1 2.2 , 5%, Chip Resistor 1206
R2 51 , 5%, Chip Resistor 0805
R3 470 , 5%, Chip Resistor 0805 to be adjusted for IQ = 50 mA
T1 SMD Transistor, BCX54 or Similar
T2 Voltage Regulator 7805
Figure 2. 960 MHz Electrical Schematic
TYPICAL CHARACTERITICS
CW – WIDEBAND
– 25
3rd ORDER
– 35
5th ORDER
– 45
VCE = 26 V
ICQ = 50 mA
f = 900 MHz
12345678
Pout, OUTPUT POWER (WATTS)
Figure 3. Intermodulation versus Output Power
– 25
3rd ORDER
– 35
5th ORDER
– 45
VCE = 26 V
ICQ = 100 mA
f = 900 MHz
1 23 4 5 6 7 8
Pout, OUTPUT POWER (WATTS)
Figure 4. Intermodulation versus Output Power
PEAK POWER
– 6 dB
IMD
0.1 MHz
MOTOROLA RF DEVICE DATA
TP3006
3










Скачать PDF:

[ TP3006.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
TP3005UHF POWER TRANSISTOR NPN SILICONMotorola  Inc
Motorola Inc
TP3005UHF POWER TRANSISTOR NPN SILICONMotorola  Inc
Motorola Inc
TP3005UHF POWER TRANSISTOR NPN SILICONMotorola  Inc
Motorola Inc
TP3006RF POWER TRANSISTOR NPN SILICONMotorola  Inc
Motorola Inc

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск