TP3006 PDF даташит
Спецификация TP3006 изготовлена «Motorola Inc» и имеет функцию, называемую «RF POWER TRANSISTOR NPN SILICON». |
|
Детали детали
Номер произв | TP3006 |
Описание | RF POWER TRANSISTOR NPN SILICON |
Производители | Motorola Inc |
логотип |
6 Pages
No Preview Available ! |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by TP3006/D
The RF Line
NPN Silicon
RF Power Transistor
The TP3006 is designed for cellular radio base station amplifiers up to 960
MHz. It incorporates high value emitter ballast resistors, gold metallizations and
offers a high degree of reliability and ruggedness. The TP3006 also features
input and output matching networks and high impedances. It can easily operate
in a full 870– 960 MHz bandwidth in a simple circuit.
• Class AB Operation
• Specified 26 Volts, 960 MHz Characteristics
Output Power — 5 Watts
Gain — 9 dB min
Efficiency — 45% min
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
TP3006
5 W, 870 – 960 MHz
RF POWER TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector–Current — Continuous
Storage Temperature Range
Operating Junction Temperature
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Symbol
VCER
VCBO
VEBO
IC
Tstg
TJ
PD
Value
45
55
3.5
2
– 40 to +100
200
25
0.14
Unit
Vdc
Vdc
Vdc
Adc
°C
°C
Watts
W/°C
CASE 319–07, STYLE 2
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (1)
Symbol
RθJC
Max
7
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 15 mA, RBE = 75 Ω)
Emitter–Base Breakdown Voltage
(IE = 4 mAdc)
Collector–Base Breakdown Voltage
(IC = 15 mAdc)
Collector–Emitter Leakage
(VCE = 26 V, RBE = 75 Ω)
V(BR)CER
V(BR)EBO
V(BR)CBO
ICER
45
3.5
55
—
—
—
—
—
— Vdc
— Vdc
— Vdc
4 mA
ON CHARACTERISTICS
DC Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc)
hFE 15 — 100 —
NOTE:
(continued)
1. Thermal resistance is determined under specified RF operating condition at temperature test point (see drawing of the package).
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
TP3006
1
No Preview Available ! |
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 26 V, IE = 0, f = 1 MHz )
Cob — 8.5 — pF
FUNCTIONAL TESTS IN CW
Common–Emitter Amplifier Power Gain
(VCC = 26 V, Pout = 5 W, ICQ = 50 mA, f = 960 MHz)
Gp 9 10.5 — dB
Collector Efficiency
(VCC = 26 V, Pout = 5 W, IQ = 50 mA, f = 960 MHz)
h 45 50 — %
Input Overdrive (no degradation in Pout)
(VCC = 26 V, IQ = 50 mA, f = 960 MHz)
Pin 3 — — dB
FUNCTIONAL TESTS IN 2 TONES
3rd Order Intermodulation
(VCC = 26 V, Ppeak= 5 W, ICQ = 50 mA, f = 900 MHz)
IMD3 — – 46 —
dB
5th Order Intermodulation
(VCC = 26 V, Ppeak= 5 W, ICQ = 50 mA, f = 900 MHz)
IMD5 — – 46 —
dB
TP3006
2
f = 870 MHz
Zin
Zo = 10 Ω
ZOL
f = 870 MHz
960
960
Pout = 5 W (CW), VCE = 26 V, ICQ = 50 mA
f
(MHz)
Zin
(Ω)
ZOL
(Ω)
870 6.26 – j6.40 5.22 + j9.47
900 7.40 – j12.3 4.17+ j9.02
960 14.8 – j12.9 4.21 + j9.91
Figure 1. Series Equivalent Input and Output Impedances
MOTOROLA RF DEVICE DATA
No Preview Available ! |
T2
T1
C5 +VCC
+
C4 R3 C9
R2 D1
C8
D2* C6
C3 R1
C7
RF INPUT
C1
*CONTACT WITH RF TRANSISTOR
50 Ω
DUT
RF OUTPUT
C2
50 Ω
C1
C2,C3
C4,C7
C5,C9
C6,C8
D1,D2
22 pF, 5%, Chip Capacitor 0805
330 pF, Chip Capacitor 0805
15 nF, 5%, Chip Capacitor 0805
6.8 F, 35 V, Chip Capacitor 0805
330 pF, Chip Capacitor 0805
SMD Diode
R1 2.2 Ω, 5%, Chip Resistor 1206
R2 51 Ω, 5%, Chip Resistor 0805
R3 470 Ω, 5%, Chip Resistor 0805 to be adjusted for IQ = 50 mA
T1 SMD Transistor, BCX54 or Similar
T2 Voltage Regulator 7805
Figure 2. 960 MHz Electrical Schematic
TYPICAL CHARACTERITICS
CW – WIDEBAND
– 25
3rd ORDER
– 35
5th ORDER
– 45
VCE = 26 V
ICQ = 50 mA
f = 900 MHz
12345678
Pout, OUTPUT POWER (WATTS)
Figure 3. Intermodulation versus Output Power
– 25
3rd ORDER
– 35
5th ORDER
– 45
VCE = 26 V
ICQ = 100 mA
f = 900 MHz
1 23 4 5 6 7 8
Pout, OUTPUT POWER (WATTS)
Figure 4. Intermodulation versus Output Power
PEAK POWER
– 6 dB
IMD
0.1 MHz
MOTOROLA RF DEVICE DATA
TP3006
3
Скачать PDF:
[ TP3006.PDF Даташит ]
Номер в каталоге | Описание | Производители |
TP3005 | UHF POWER TRANSISTOR NPN SILICON | Motorola Inc |
TP3005 | UHF POWER TRANSISTOR NPN SILICON | Motorola Inc |
TP3005 | UHF POWER TRANSISTOR NPN SILICON | Motorola Inc |
TP3006 | RF POWER TRANSISTOR NPN SILICON | Motorola Inc |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |