Z0103MA PDF даташит
Спецификация Z0103MA изготовлена «NXP Semiconductors» и имеет функцию, называемую «4Q Triac». |
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Детали детали
Номер произв | Z0103MA |
Описание | 4Q Triac |
Производители | NXP Semiconductors |
логотип |
13 Pages
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Z0103MA
4Q Triac
6 May 2015
Product data sheet
1. General description
Planar passivated very sensitive gate four quadrant triac in a SOT54 (TO-92) plastic
package intended for use in applications requiring direct interfacing to logic ICs and low
power gate drivers.
2. Features and benefits
• Direct interfacing to logic level ICs
• Direct interfacing to low power gate drive circuits
• High blocking voltage capability
• Planar passivated for voltage ruggedness and reliability
• Triggering in all four quadrants
• Very sensitive gate in four quadrants
3. Applications
• General purpose low power motor control
• Home appliances
• Industrial process control
• Low power AC Fan controllers
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
IT(RMS)
RMS on-state current full sine wave; Tlead ≤ 45 °C; Fig. 1;
Fig. 2; Fig. 3
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 600 V
- - 8A
- - 1A
- - 3 mA
- - 3 mA
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NXP Semiconductors
Z0103MA
4Q Triac
Symbol
Parameter
Conditions
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 3 mA
- - 5 mA
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 T2 main terminal 2
2 G gate
3 T1 main terminal 1
Simplified outline
321
TO-92 (SOT54)
Graphic symbol
T2
sym051
T1
G
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Z0103MA
TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
Version
SOT54
Z0103MA
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
2 / 13
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NXP Semiconductors
Z0103MA
4Q Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state voltage
IT(RMS)
RMS on-state current
full sine wave; Tlead ≤ 45 °C; Fig. 1;
Fig. 2; Fig. 3
ITSM non-repetitive peak on-state full sine wave; Tj(init) = 25 °C;
current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
I2t I2t for fusing
tp = 10 ms; SIN
dIT/dt
rate of rise of on-state current IG = 6 mA; T2+ G+
IG = 6 mA; T2+ G-
IG = 10 mA; T2- G+
IG = 6 mA; T2- G-
IGM peak gate current
PGM peak gate power
PG(AV)
average gate power
over any 20 ms period
Tstg storage temperature
Tj junction temperature
1 .2
IT(RMS )
(A)
0 .8
003aac264
16
IT(RMS)
(A)
12
8
0 .4
4
Min Max Unit
- 600 V
- 1A
- 8A
- 8.5 A
- 0.32 A2s
- 50 A/µs
- 50 A/µs
- 20 A/µs
- 50 A/µs
- 1A
- 2W
- 0.1 W
-40 150 °C
- 125 °C
003a a f977
0
-50 0 50 100 150
Tle a d (°C )
Fig. 1. RMS on-state current as a function of lead
temperature; maximum values
0
10-2
10-1
1 10
surge duration (s)
f = 50 Hz; Tlead = 45 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
Z0103MA
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
3 / 13
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