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IRF840 PDF даташит
| Спецификация IRF840 изготовлена «STMicroelectronics» и имеет функцию, называемую «N - CHANNEL 500V - 0.75ohm - 8A - TO-220 PowerMESH] MOSFET». |
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Детали детали
| Номер произв | IRF840 |
| Описание | N - CHANNEL 500V - 0.75ohm - 8A - TO-220 PowerMESH] MOSFET |
| Производители | STMicroelectronics |
| логотип |  |
8 Pages
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® IRF840
N - CHANNEL 500V - 0.75Ω - 8A - TO-220
PowerMESH™ MOSFET
TYPE
V DSS
RDS(on)
ID
IRF840
500 V < 0.85 Ω
8A
s TYPICAL RDS(on) = 0.75 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY™ process. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
VDS Drain-source Voltage (VGS = 0)
500
VDGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
500
± 20
8.0
5.1
IDM ( •)
Ptot
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
32
125
Derating Factor
1.0
dv/dt(1) Peak Diode Recovery voltage slope
3.5
Tstg Storage Temperature
-65 to 150
Tj Max. Operating Junction Temperature
150
(•) Pulse width limited by safe operating area
(1) ISD ≤ 8A, di/dt ≤ 100 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet
August 1998
Uni t
V
V
V
A
A
A
W
W/oC
V/ ns
oC
oC
1/8
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IRF840
THERMAL DATA
Rt hj-ca se
Rth j -a m b
Rthc- si nk
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
1.0
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
S ymb ol
IAR
E AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR , VDD = 50 V)
Max Valu e
8.0
520
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
S ymb ol
V(BR)DSS
IDSS
IGSS
P a ra m et er
Test Conditions
Dr ain- sou rc e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero G ate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
500
Typ. Max.
1
50
± 100
Unit
V
µA
µA
nA
ON (∗)
S ymb ol
V GS(th )
RDS( o n )
ID(o n)
P a ra m et er
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 4.8 A
Resistance
On St ate Drain Current VDS > ID(on) x RDS(on) max
VGS = 10 V
Min.
2
Typ .
3
Max.
4
Unit
V
0.75 0.85
Ω
8.0 A
DYNAMIC
S ymb ol
gfs (∗)
Ciss
Coss
Crss
P a ra m et er
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 4.8 A
Min.
4.9
Typ .
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
1300
200
18
pF
pF
pF
2/8
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IRF840
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
S ymb ol
td(on)
tr
P a ra m et er
Turn-on Time
Rise Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 250 V ID = 4.3 A
RG = 4.7 Ω
VGS = 10 V
(see test circuit, figure 3)
VDD = 400 V ID = 8.0 A VGS = 10 V
Min.
Typ .
19
11
39
10.6
13.7
Max.
50
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
S ymb ol
tr(Vo f f)
tf
tc
P a ra m et er
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 400 V ID = 8 A
RG = 4.7 Ω VGS = 10 V
(see test circuit, figure 5)
Min.
Typ .
11.5
11
20
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
S ymb ol
P a ra m et er
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 8.0 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
ISD = 8.0 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
(see test circuit, figure 5)
Charge
IRRM Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ .
Max.
8.0
32
Unit
A
A
420
3.5
16.5
1.6
V
ns
µC
A
Safe Operating Area
Thermal Impedance
3/8
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| Номер в каталоге | Описание | Производители |
| IRF840 | 500V, 8A, N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |  Motorola Inc |
| IRF840 | 8A, 500V, N-Channel MOSFET, Transistor |  NXP Semiconductors |
| IRF840 | N - CHANNEL 500V - 0.75ohm - 8A - TO-220 PowerMESH] MOSFET | STMicroelectronics |
| IRF840 | 500V, 8A, N-CHANNEL POWER MOSFET |  Samsung semiconductor |
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