NTP125N02R Datasheet PDF - ON Semiconductor
| Part Number | NTP125N02R | |
| Description | Power MOSFET 125 A/ 24 V N-Channel TO-220/ D2PAK | |
| Manufacturers | ON Semiconductor | |
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NTB125N02R, NTP125N02R
Power MOSFET
125 A, 24 V N−Channel
TO−220, D2PAK
Features
• Planar HD3e Process for Fast Switching Performance
• Body Diode for Low trr and Qrr and Optimized for Synchronous
Operation
• Low Ciss to Minimize Driver Loss
• Optimized Qgd and RDS(on) for Shoot−through Protection
• Low Gate Charge
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance − Junction−to−Case
Total Power Dissipation @ TC = 25°C
Drain Current −
Continuous @ TC = 25°C, Chip
Continuous @ TC = 25°C, Limited by Package
Continuous @ TA = 25°C, Limited by Wires
Single Pulse (tp = 10 ms)
Thermal Resistance −
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
Thermal Resistance −
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
Operating and Storage Temperature Range
VDSS
VGS
RqJC
PD
ID
ID
ID
ID
24
±20
1.1
113.6
Vdc
Vdc
°C/W
W
125
120.5
95
250
A
A
A
A
RqJA
PD
ID
46 °C/W
2.72 W
18.6 A
RqJA
PD
ID
TJ, Tstg
63 °C/W
1.98 W
15.9 A
−55 to °C
150
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, IL = 15.5 Apk,
L = 1 mH, RG = 25 W)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
EAS 120 mJ
TL 260 °C
1. When surface mounted to an FR4 board using 1 inch pad size,
(Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in2).
PIN ASSIGNMENT
PIN FUNCTION
1 Gate
2 Drain
3 Source
4 Drain
http://onsemi.com
125 AMPERES, 24 VOLTS
RDS(on) = 3.7 mW (Typ)
D
G
S
MARKING
DIAGRAMS
4 TO−220AB
CASE 221A 125N2R
STYLE 5
YWW
123
4 D2PAK
125N2
CASE 418AA
YWW
2 STYLE 2
13
125N2 = Specific Device Code
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
NTB125N02R
NTB125N02RT4
NTP125N02R
Package
D2PAK
D2PAK
TO−220AB
Shipping†
50 Units/Rail
800/Tape & Reel
50 Units/Rail
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2003
October, 2003 − Rev. 4
1
Publication Order Number:
NTB125N02R/D
|
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NTB125N02R, NTP125N02R
1
Normalized to RθJC at Steady State
0.1
0.01
0.00001
0.0001
0.001
0.01
t, TIME (s)
Figure 12. Thermal Response
0.1
1
PACKAGE DIMENSIONS
Q
H
Z
B
4
1 23
F
T
TO−220AB
CASE 221A−09
ISSUE AA
−T−
SEATING
PLANE
C
S
A
U
K
L
V
G
N
D
R
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
INCHES
DIM MIN MAX
A 0.570 0.620
B 0.380 0.405
C 0.160 0.190
D 0.025 0.035
F 0.142 0.147
G 0.095 0.105
H 0.110 0.155
J 0.018 0.025
K 0.500 0.562
L 0.045 0.060
N 0.190 0.210
Q 0.100 0.120
R 0.080 0.110
S 0.045 0.055
T 0.235 0.255
U 0.000 0.050
V 0.045 −−−
Z −−− 0.080
MILLIMETERS
MIN MAX
14.48 15.75
9.66 10.28
4.07 4.82
0.64 0.88
3.61 3.73
2.42 2.66
2.80 3.93
0.46 0.64
12.70 14.27
1.15 1.52
4.83 5.33
2.54 3.04
2.04 2.79
1.15 1.39
5.97 6.47
0.00 1.27
1.15 −−−
−−− 2.04
STYLE 5:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
http://onsemi.com
5
10
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| Information | Total 6 Pages | |
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Featured Datasheets
| Part Number | Description | MFRS |
| NTP125N02R | The function is Power MOSFET 125 A/ 24 V N-Channel TO-220/ D2PAK. ON Semiconductor | |
| NTP125N02R | The function is Power MOSFET 125 A / 24 V N-Channel TO-220 / D2PAK. ON Semiconductor | |
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