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Номер произв SC721
Описание SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Производители Polyfet RF Devices
логотип Polyfet RF Devices логотип 



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SC721 Даташит, Описание, Даташиты
polyfet rf devices
SC721
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
TM
"Polyfet" process features
low feedback and output capacitances
resulting in high F t transistors with high
input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
15.0 Watts Single Ended
Package Style AC
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
Total
Device
Dissipation
60 Watts
Junction to
Case Thermal
Resistance
o
2.80 C/W
ABSOLUTE MAXIMUM RATINGS ( T = 25 oC )
Maximum
Junction
Temperature
200 oC
Storage
Temperature
oo
-65 C to 150 C
DC Drain
Current
6.0 A
Drain to
Gate
Voltage
50 V
Drain to
Source
Voltage
50 V
Gate to
Source
Voltage
20 V
RF CHARACTERISTICS ( 15.0 WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gain
η Drain Efficiency
8
60
dB Idq = 0.20 A, Vds = 12.5 V, F = 400MHz
% Idq = 0.20 A, Vds = 12.5 V, F = 400 MHz
VSWR Load Mismatch Tolerance
20:1 Relative Idq = 0.20 A, Vds = 12.5 V, F = 400MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss
Idss
Drain Breakdown Voltage
Zero Bias Drain Current
40 V Ids = 20.00 mA, Vgs = 0V
1.0 mA
Vds = 12.5 V, Vgs = 0V
Igss Gate Leakage Current
1 uA
Vds = 0V Vgs = 30V
Vgs Gate Bias for Drain Current
1
7V
Ids = 0.10 A, Vgs = Vds
gM Forward Transconductance
1.3 Mho Vds = 10V, Vgs = 5V
Rdson Saturation Resistance
0.60
Ohm
Vgs = 20V, Ids = 3.50 A
Idsat
Saturation Current
9.50 Amp Vgs = 20V, Vds = 10V
Ciss Common Source Input Capacitance
45.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitance
3.5 pF Vds = 12.5 Vgs = 0V, F = 1 MHz
Coss Common Source Output Capacitance
55.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 03/28/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com









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SC721 Даташит, Описание, Даташиты
SC721
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
SC721Pin vs Pout Freq=400MHz, VDS=12.5V, Idq=.2A
20
1000
S1C 1 DIE CAPACITANCE
Pout 10.00
15
100 Coss
10
8.00
5
Efficiency = 60%
Gain
0 6.00
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Pin in Watts
IV CURVE
S1C 1 DIE IV
10
9
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16 18 20
vg=2v
Vg=4v
Vg=V6DvSINVOLTSvg=8v
0 vg=12v
Zin Zout
10
1
0
10.00
1.00
0.10
0.01
0
Ciss
Crss
5 10 15 20
VDS IN VOLTS
ID & GM VS VGS
S1C1DIE ID&GMVsVG
25
Id
30
gM
2 4 6 8 10 12 14 16
Vgs in Volts
PACKAGE DIMENSIONS IN INCHES
18
Tolerance .XX +/-0.01 .XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 03/28/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com










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