(PDF) SI2305DS Datasheet - P-Channel 1.25-W/ 1.8-V (G-S) MOSFET

Número de pieza	SI2305DS
Descripción	P-Channel 1.25-W/ 1.8-V (G-S) MOSFET
Fabricantes	Vishay Siliconix
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No Preview Available ! Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) –8 rDS(on) (W) 0.052 @ VGS = –4.5 V 0.071 @ VGS = –2.5 V 0.108 @ VGS = –1.8 V ID (A) "3.5 "3 "2 TO-236 (SOT-23) G1 S2 3D Top View Si2305DS (A5)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS VGS –8 "8 Continuous Drain Current (TJ = 150_C) Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipation)a, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID IDM IS PD TJ, Tstg "3.5 "2.8 "12 –1.6 1.25 0.8 –55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board. b. t v5 sec. Document Number: 70833 S-56947—Rev. C, 28-Dec-98 t v 5 sec Steady State Symbol RthJA Typical 130 Maximum 100 Unit _C/W www.vishay.com S FaxBack 408-970-5600 2-1 1 page

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PDF SI2305DS Data sheet ( Hoja de datos )