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Datasheet SGF5N150UF Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | SGF5N150UF | General Description SGF5N150UF
IGBT
SGF5N150UF
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGF5N150UF is designed for the Switching Power Supply applications.
Features
• High Speed Switching • Low Saturation Voltage : VCE(sat) = 4.7 V @ |  Fairchild Semiconductor | data |
SGF Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | SGF15N60RUFD | Short Circuit Rated IGBT
SGF15N60RUFD
IGBT
SGF15N60RUFD
Short Circuit Rated IGBT
General Description
Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such a Fairchild Semiconductor igbt | | |
| 2 | SGF15N90D | General Description SGF15N90D
IGBT
SGF15N90D
General Description
Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitab Fairchild Semiconductor data | | |
| 3 | SGF2 | Diode, Rectifier American Microsemiconductor diode | | |
| 4 | SGF23N60UF | Ultra-Fast IGBT SGF23N60UF
October 2001
IGBT
SGF23N60UF
Ultra-Fast IGBT
General Description
Fairchild's Insulated Gate Bipolar Transistor(IGBT) UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching Fairchild Semiconductor igbt | | |
| 5 | SGF23N60UFD | Ultra-Fast IGBT SGF23N60UFD
June 2001
IGBT
SGF23N60UFD
Ultra-Fast IGBT
General Description
Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD series provides low conduction and switching losses. UFD series is designed for the applications such as motor control and general inverters where High Speed Switching Fairchild Semiconductor igbt | | |
| 6 | SGF25 | For C- to X-band local oscillator and amplifier Ordering number : EN5820
N-Channel GaAs MESFET
SGF25
For C- to X-band local oscillator and amplifier
Features
Package Dimensions
• Super miniaturized plastic-mold package(CP4). unit: mm • High reliability achieved by original manufacturing 2134A technology(adopting a protection coat). • A  Sanyo Semicon Device amplifier | | |
| 7 | SGF32 | N CHANNEL GAASMES TRANSISTOR SGF32
No.
SGF32
µ µ
(Bottom view)
(Side view)
0.25
0.3 3 4
0.15
2.1
1.6
0.25
1.3 2.0
0.07
2
1
(Top view)
4
(Side view)
3
0.85
1
2
SGF32
SGF32
50 25 120 100 150 10 200 250 150
90 60
30
0
10
25
50
100
150
250
180
5
--10
--250 --200 --15 Sanyo Semicon Device transistor | |
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