DataSheet26.com

K6E0808C1E-I10 PDF даташит

Спецификация K6E0808C1E-I10 изготовлена ​​​​«Samsung semiconductor» и имеет функцию, называемую «32K x 8 Bit High-Speed CMOS Static RAM».

Детали детали

Номер произв K6E0808C1E-I10
Описание 32K x 8 Bit High-Speed CMOS Static RAM
Производители Samsung semiconductor
логотип Samsung semiconductor логотип 

9 Pages
scroll

No Preview Available !

K6E0808C1E-I10 Даташит, Описание, Даташиты
K6E0808C1E-C/E-L, K6E0808C1E-I/E-P
For Cisco
CMOS SRAM
Document Title
32Kx8 Bit High-Speed CMOS Static RAM(5V Operating).
Operated at Commercial and Industrial Temperature Ranges.
Revision History
Rev.No. History
Rev. 0.0 Initial release with Preliminary.
Rev. 1.0 Release to Final Data Sheet.
Rev. 2.0 2.1. Add Low Power Version.
2.2. Add data retention charactoristic.
Draft Data
Aug. 1. 1998
Nov. 2. 1998
Feb. 25. 1999
Remark
Preliminary
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Revision 2.0
Feburary 1999









No Preview Available !

K6E0808C1E-I10 Даташит, Описание, Даташиты
K6E0808C1E-C/E-L, K6E0808C1E-I/E-P
For Cisco
CMOS SRAM
32K x 8 Bit High-Speed CMOS Static RAM
FEATURES
• Fast Access Time 10, 12, 15ns(Max.)
• Low Power Dissipation
Standby (TTL) : 20mA(Max.)
(CMOS) : 2mA(Max.)
0.6mA(Max.) L-ver. Only
Operating K6E0808C1E-10 : 80mA(Max.)
K6E0808C1E-12 : 80mA(Max.)
K6E0808C1E-15 : 80mA(Max.)
• Single 5.0V±10% Power Supply
• TTL Compatible Inputs and Outputs
• I/O Compatible with 3.3V Device
• Fully Static Operation
- No Clock or Refresh required
• Three State Outputs
• 2V Minimum Data Retention : L-Ver. only
• Standard Pin Configuration
K6E0808C1E-J : 28-SOJ-300
K6E0808C1E-T : 28-TSOP1-0813. 4F
ORDERING INFORMATION
K6E0808C1E-C10/C12/C15
Commercial Temp.
K6E0808C1E-I10/I12/I15
Industrial Temp.
FUNCTIONAL BLOCK DIAGRAM
Clk Gen.
A0
A1
A2
A3
A4
A5
A6
A7
A8
I/O1~I/O8
Data
Cont.
Pre-Charge-Circuit
Memory Array
512 Rows
64x8 Columns
I/O Circuit
Column Select
CLK
Gen.
A9 A10 A11 A12 A13 A14
CS
WE
OE
GENERAL DESCRIPTION
The K6E0808C1E is a 262,144-bit high-speed Static Random
Access Memory organized as 32,768 words by 8 bits. The
K6E0808C1E uses 8 common input and output lines and has
an output enable pin which operates faster than address access
time at read cycle. The device is fabricated using SAMSUNGs
advanced CMOS process and designed for high-speed circuit
technology. It is particularly well suited for use in high-density
high-speed system applications. The K6E0808C1E is packaged
in a 300mil 28-pin plastic SOJ or TSOP1 forward.
PIN CONFIGURATION(Top View)
OE 1
A11 2
A9 3
A8 4
A13 5
WE 6
Vcc 7
A14 8
A12 9
A7 10
A6 11
A5 12
A4 13
A3 14
TSOP1
28 A10
27 CS
26 I/O8
25 I/O7
24 I/O6
23 I/O5
22 I/O4
21 Vss
20 I/O3
19 I/O2
18 I/O1
17 A0
16 A1
15 A2
A14 1
A12 2
A7 3
A6 4
A5 5
A4 6
A3 7
A2 8
A1 9
A0 10
I/O1 11
I/O2 12
I/O3 13
Vss 14
SOJ
28 Vcc
27 WE
26 A13
25 A8
24 A9
23 A11
22 OE
21 A10
20 CS
19 I/O8
18 I/O7
17 I/O6
16 I/O5
15 I/O4
PIN FUNCTION
Pin Name
A0 - A14
WE
CS
OE
I/O1 ~ I/O8
VCC
VSS
Pin Function
Address Inputs
Write Enable
Chip Select
Output Enable
Data Inputs/Outputs
Power(+5.0V)
Ground
-2-
Revision 2.0
Feburary 1999









No Preview Available !

K6E0808C1E-I10 Даташит, Описание, Даташиты
K6E0808C1E-C/E-L, K6E0808C1E-I/E-P
For Cisco
CMOS SRAM
ABSOLUTE MAXIMUM RATINGS*
Parameter
Voltage on Any Pin Relative to VSS
Voltage on VCC Supply Relative to VSS
Power Dissipation
Storage Temperature
Operating Temperature Commercial
Industrial
Symbol
VIN, VOUT
VCC
PD
TSTG
TA
TA
Rating
-0.5 to 7.0
-0.5 to 7.0
1.0
-65 to 150
0 to 70
-40 to 85
Unit
V
V
W
°C
°C
°C
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS*(TA=0 to 70°C)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
VCC
VSS
VIH
VIL
Min
4.5
0
2.2
-0.5**
Typ
5.0
0
-
-
* The above parameters are also guaranteed at industrial temperature range.
** VIL(Min) = -2.0(Pulse Width7ns) for I20mA.
*** VIH(Max) = VCC+2.0V(Pulse Width7ns) for I20mA.
Max
5.5
0
VCC+0.5***
0.8
Unit
V
V
V
V
DC AND OPERATING CHARACTERISTICS*(TA=0 to 70°C,VCC=5.0V±10% unless otherwise specified)
Parameter
Input Leakage Current
Output Leakage Current
Operating Current
Standby Current
Output Low Voltage Level
Output High Voltage Level
Symbol
ILI
ILO
ICC
Test Conditions
VIN = VSS to VCC
CS=VIH or OE=VIH or WE=VIL
VOUT = VSS to VCC
Min. Cycle, 100% Duty
CS=VIL, VIN = VIH or VIL,
IOUT=0mA
ISB
ISB1
VOL
VOH
VOH1**
Min. Cycle, CS=VIH
f=0MHz, CSVCC-0.2V,
VINVCC-0.2V or VIN0.2V
IOL=8mA
IOH=-4mA
IOH1=0.1mA
10ns
12ns
15ns
Normal
L-Ver
Min
-2
-2
-
-
-
-
-
-
-
2.4
-
Max
2
2
80
80
80
20
2
0.6
0.4
-
3.95
Unit
µA
µA
mA
mA
mA
V
V
V
* The above parameters are also guaranteed at industrial temperature range.
** VCC=5.0V±5%, Temp.=25°C.
CAPACITANCE*(TA=25°C, f=1.0MHz)
Item
Input/Output Capacitance
Input Capacitance
Symbol
CI/O
CIN
Test Conditions
VI/O=0V
VIN=0V
MIN
-
-
Max
8
7
Unit
pF
pF
* Capacitance is sampled and not 100% tested.
-3-
Revision 2.0
Feburary 1999










Скачать PDF:

[ K6E0808C1E-I10.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
K6E0808C1E-I1032K x 8 Bit High-Speed CMOS Static RAMSamsung semiconductor
Samsung semiconductor
K6E0808C1E-I1232K x 8 Bit High-Speed CMOS Static RAMSamsung semiconductor
Samsung semiconductor
K6E0808C1E-I1532K x 8 Bit High-Speed CMOS Static RAMSamsung semiconductor
Samsung semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск