J109 PDF даташит
Спецификация J109 изготовлена «NXP Semiconductors» и имеет функцию, называемую «N-channel silicon junction FETs». |
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Детали детали
Номер произв | J109 |
Описание | N-channel silicon junction FETs |
Производители | NXP Semiconductors |
логотип |
7 Pages
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DISCRETE SEMICONDUCTORS
DATA SHEET
J108; J109; J110
N-channel silicon junction FETs
Product specification
Supersedes data of April 1995
File under Discrete Semiconductors, SC07
1996 Jul 30
No Preview Available ! |
Philips Semiconductors
N-channel silicon junction FETs
Product specification
J108; J109; J110
FEATURES
• High speed switching
• Interchangeability of drain and source connections
• Low RDSon at zero gate voltage (<8 Ω for J108).
APPLICATIONS
• Analog switches
• Choppers and commutators.
DESCRIPTION
N-channel symmetrical silicon junction field-effect
transistors in a TO-92 package.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PINNING - TO-92
PIN SYMBOL
1g
2s
3d
DESCRIPTION
gate
source
drain
1
handbook, halfpage2
3
g
MAM197
d
s
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
VGSoff
drain-source voltage
gate-source cut-off voltage
J108
J109
J110
IDSS drain current
J108
J109
J110
Ptot total power dissipation
CONDITIONS
ID = 1 µA; VDS = 5 V
VGS = 0; VDS = 5 V
up to Tamb = 50 °C
MIN. MAX. UNIT
− ±25 V
−3 −10
−2 −6
−0.5 −4
V
V
V
80 −
mA
40 −
mA
10 −
mA
− 400 mW
1996 Jul 30
2
No Preview Available ! |
Philips Semiconductors
N-channel silicon junction FETs
Product specification
J108; J109; J110
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VDS
VGSO
VGDO
IG
Ptot
Tstg
Tj
drain-source voltage
gate-source voltage
gate-drain voltage
forward gate current (DC)
total power dissipation
storage temperature
operating junction temperature
open drain
open source
up to Tamb = 50 °C
MIN.
−
−
−
−
−
−65
−
MAX.
±25
−25
−25
50
400
150
150
UNIT
V
V
V
mA
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
VALUE
250
UNIT
K/W
STATIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
V(BR)GSS
VGSoff
IDSS
IGSS
IDSX
RDSon
gate-source breakdown voltage
gate-source cut-off voltage
J108
J109
J110
drain current
J108
J109
J110
gate leakage current
drain-source cut-off current
drain-source on-state resistance
J108
J109
J110
CONDITIONS
IG = −1 µA; VDS = 0
ID = 1 µA; VDS = 5 V
VGS = 0; VDS = 15 V
VGS = −15 V; VDS = 0
VGS = −10 V; VDS = 5 V
VGS = 0; VDS = 100 mV
MIN.
−
−3
−2
−0.5
80
40
10
−
−
−
−
−
TYP.
−
−
−
−
−
−
−
−
−
−
−
−
MAX.
−25
−10
−6
−4
UNIT
V
V
V
V
V
− mA
− mA
− mA
−3 nA
3 nA
8Ω
12 Ω
18 Ω
1996 Jul 30
3
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