DataSheet26.com

1318 PDF даташит

Спецификация 1318 изготовлена ​​​​«Panasonic Semiconductor» и имеет функцию, называемую «Silicon NPN epitaxial planer type(For low-frequency driver amplification)».

Детали детали

Номер произв 1318
Описание Silicon NPN epitaxial planer type(For low-frequency driver amplification)
Производители Panasonic Semiconductor
логотип Panasonic Semiconductor логотип 

3 Pages
scroll

No Preview Available !

1318 Даташит, Описание, Даташиты
Transistor
2SC1318A
Silicon NPN epitaxial planer type
For low-frequency driver amplification
Complementary to 2SA720A
s Features
q High collector to emitter voltage VCEO.
q Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
80
70
5
1
0.5
750
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
5.0±0.2
Unit: mm
4.0±0.2
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
ICBO
VCBO
VCB = 20V, IE = 0
IC = 10µA, IE = 0
0.1 µA
80 V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
VCEO
VEBO
hFE1*1
hFE2
VCE(sat)
VBE(sat)
IC = 2mA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 150mA*2
VCE = 10V, IC = 500mA*2
IC = 300mA, IB = 30mA*2
IC = 300mA, IB = 30mA*2
70
5
85 160 340
40 100
0.2 0.6
0.85 1.5
V
V
V
V
Transition frequency
fT VCB = 10V, IE = –50mA, f = 200MHz
120 MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
11 20 pF
*2 Pulse measurement
*1hFE1 Rank classification
Rank
Q
R
hFE1 85 ~ 170 120 ~ 240
S
170 ~ 340
1









No Preview Available !

1318 Даташит, Описание, Даташиты
Transistor
PC — Ta
1.2
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VCE(sat) — IC
10
IC/IB=10
3
1
0.3
Ta=75˚C
0.1 25˚C
–25˚C
0.03
0.01
0.003
0.001
1
3 10 30 100 300 1000
Collector current IC (mA)
fT — IE
200 VCB=10V
180 Ta=25˚C
160
140
120
100
80
60
40
20
0
–1 –3 –10 –30 –100
Emitter current IE (mA)
IC — VCE
1.2
Ta=25˚C
1.0 IB=–10mA
9mA
8mA
0.8 7mA
6mA
5mA
0.6
4mA
3mA
0.4
2mA
0.2 1mA
0
0 2 4 6 8 10
Collector to emitter voltage VCE (V)
VBE(sat) — IC
100
IC/IB=10
30
10
3
1 Ta=–25˚C
25˚C
75˚C
0.3
0.1
0.03
0.01
1
3 10 30 100 300 1000
Collector current IC (A)
Cob — VCB
50
IE=0
45 f=1MHz
Ta=25˚C
40
35
30
25
20
15
10
5
0
13
10 30 100
Collector to base voltage VCB (V)
2SC1318A
IC — IB
1.2
VCE=10V
Ta=25˚C
1.0
0.8
0.6
0.4
0.2
0
0 2 4 6 8 10
Base current IB (mA)
hFE — IC
300
VCE=10V
250
Ta=75˚C
200
25˚C
150 –25˚C
100
50
0
1 3 10 30 100 300 1000
Collector current IC (mA)
ICBO — Ta
104
VCB=20V
103
102
10
1
0 60 120 180
Ambient temperature Ta (˚C)
2









No Preview Available !

1318 Даташит, Описание, Даташиты
Transistor
105
VCE=10V
ICEO — Ta
104
103
102
10
1
0 20 40 60 80 100 120 140
Ambient temperature Ta (˚C)
2SC1318A
3










Скачать PDF:

[ 1318.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
1310200 V - 1/000 V Single Phase BridgeETC
ETC
1310200 V - 1/000 V Single Phase BridgeETC
ETC
1310Diode ( Rectifier )American Microsemiconductor
American Microsemiconductor
1310F200 V - 1/000 V Single Phase BridgeETC
ETC

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск