|
|
PDF SSP4N60B Data sheet ( Hoja de datos )
| Número de pieza | SSP4N60B | |
| Descripción | 600V N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SSP4N60B (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
SSP4N60B/SSS4N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Features
• 4.0A, 600V, RDS(on) = 2.5Ω @VGS = 10 V
• Low gate charge ( typical 22 nC)
• Low Crss ( typical 14 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• TO-220F package isolation = 4.0kV (Note 6)
D
G DS
TO-220
SSP Series
GD S
TO-220F
SSS Series
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature
SSP4N60B SSS4N60B
600
4.0 4.0 *
2.5 2.5 *
16 16 *
± 30
240
4.0
10
5.5
100 33
0.8 0.26
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
SSP4N60B
1.25
0.5
62.5
SSS4N60B
3.79
--
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. B, June 2002
1 page  
Typical Characteristics (Continued)
100
D = 0.5
0.2
1 0 -1
0.1
0.05
0.02
0.01
sin gle pu lse
※ N otes :
1. Z θ JC(t) = 1.25 ℃ /W M ax.
2. D uty Factor, D =t1/t2
3 . T JM - T C = P DM * Z θ JC(t)
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S qu a re W ave P u lse D u ra tion [se c]
101
Figure 11-1. Transient Thermal Response Curve for SSP4N60B
D = 0.5
100
0.2
0.1
0.05
1 0 -1
0.02
0.01
sin gle pu lse
※ N otes :
1. Zθ
(t)
JC
=
3.79
℃ /W
M ax.
2 . D uty Fa c to r, D = t1/t2
3 . T JM - T C = P DM * Z θ JC(t)
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S qu a re W ave P u lse D u ra tion [se c]
101
Figure 11-2. Transient Thermal Response Curve for SSS4N60B
©2002 Fairchild Semiconductor Corporation
Rev. B, June 2002
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SSP4N60B.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SSP4N60 | (SSP4N55 / SSP4N60) N-Channel Power MOSFET |  Samsung Electronics |
| SSP4N60AS | Advanced Power MOFET | Fairchild Semiconductor |
| SSP4N60AS | Advanced Power MOFET | Samsung Electronics |
| SSP4N60B | 600V N-Channel MOSFET | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |