DataSheet26.com

73120 PDF даташит

Спецификация 73120 изготовлена ​​​​«Vishay Siliconix» и имеет функцию, называемую «N-Channel 25-V (D-S) MOSFET».

Детали детали

Номер произв 73120
Описание N-Channel 25-V (D-S) MOSFET
Производители Vishay Siliconix
логотип Vishay Siliconix логотип 

3 Pages
scroll

No Preview Available !

73120 Даташит, Описание, Даташиты
SPICE Device Model Si1404DH
Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
CHARACTERISTICS
N-Channel Vertical DMOS
Macro Model (Subcircuit Model)
Level 3 MOS
Apply for both Linear and Switching Application
Accurate over the 55 to 125°C Temperature Range
Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the n-channel vertical DMOS. The subcircuit
model is extracted and optimized over the 55 to 125°C
temperature ranges under the pulsed 0 to 5V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched Cgd model. All model parameter values are optimized
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 73120
27-Aug-04
www.vishay.com
1









No Preview Available !

73120 Даташит, Описание, Даташиты
SPICE Device Model Si1404DH
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VGS(th)
ID(on)
rDS(on)
gfs
VSD
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = VGS, ID = 250 µA
VDS = 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 1.57 A
VGS = 2.5 V, ID = 1.39 A
VDS = 15 V, ID = 0.75 A
IS = 1.23 A, VGS = 0 V
VDS = 15 V, VGS = 4.5 V, ID = 1.57 A
VDD = 15 V, RL = 20
ID 0.75 A, VGEN = 4.5 V, RG = 6
Notes
a. Pulse test; pulse width 300 µs, duty cycle 2%.
b. Guaranteed by design, not subject to production testing.
Simulated Measured
Data
Data
1
11
0.28
0.28
0.33
0.36
2.3 1.5
0.76
0.85
1 1.3
0.31
0.31
0.49
0.49
12 11
15 18
19 17
21 11
Unit
V
A
S
V
nC
ns
www.vishay.com
2
Document Number: 73120
27-Aug-04









No Preview Available !

73120 Даташит, Описание, Даташиты
SPICE Device Model Si1404DH
Vishay Siliconix
COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED)
Document Number: 73120
27-Aug-04
www.vishay.com
3










Скачать PDF:

[ 73120.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
73120N-Channel 25-V (D-S) MOSFETVishay Siliconix
Vishay Siliconix

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск