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Спецификация 72893 изготовлена ​​​​«Vishay Siliconix» и имеет функцию, называемую «Dual N-Channel/ 30-V (D-S) MOSFET Specification Comparison».

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Номер произв 72893
Описание Dual N-Channel/ 30-V (D-S) MOSFET Specification Comparison
Производители Vishay Siliconix
логотип Vishay Siliconix логотип 

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Specification Comparison
Vishay Siliconix
Si4804BDY vs. Si4804DY
Description: Dual N-Channel, 30-V (D-S) MOSFET
Package: SOIC-8
Pin Out:
Identical
Part Number Replacements:
Si4804BDY Replaces Si4804DY
Si4804BDY—E3 (Lead Free version) Replaces Si4804DY
Si4804BDY-T1 Replaces Si4804DY-T1
Si4804BDY-T1—E3 (Lead Free version) Replaces Si4804DY-T1
Summary of Performance:
The Si4804BDY is the replacement for the original Si4804DY; both parts perform identically including limits to the parametric
tables below.
ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Si4804BDY Si4804DY
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
TA = 25_C
TA = 70_C
Continuous Source Current (MOSFET Diode Conduction)
Power Dissipation
TA = 25_C
TA = 70_C
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
VDS
VGS
ID
IDM
IS
PD
Tj and Tstg
RthJA
30
"20
7.5
6
30
2.3
1.7
2.0
55 to 150
62.5
30
"20
7.5
6
20
1.7
2.0
1.3
55 to 150
62.5
V
A
W
_C
_C/W
SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED)
Si4804BDY
Parameter
Symbol Min Typ
Max
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Switching
Turn-On Time
VGS = 10 V
VGS = 10 V
VGS = 4.5 V
Turn-Off Time
Source-Drain Reverse Recovery Time
NS denotes parameter not specified in original data sheet.
VG(th)
IGSS
IDSS
ID(on)
rDs(on)
gfs
VSD
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
0.8 3.0
"100
1
20
0.017
0.022
0.024
0.030
19
0.75
1.2
7
2.9
2.5
0.5 1.5
11
2.6
9 15
10 17
19 30
9 15
35 55
Si4804DY
Min Typ Max
Unit
0.8 V
"100
nA
1 mA
20 A
0.018
0.024
0.022
0.030
W
22 S
0.8 1.2 V
13 20
2 nC
2.7
NS W
8 16
10 20
21 40 ns
10 20
40 80
Document Number: 72893
22-Mar-04
www.vishay.com
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72893Dual N-Channel/ 30-V (D-S) MOSFET Specification ComparisonVishay Siliconix
Vishay Siliconix

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