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71V016SA PDF даташит

Спецификация 71V016SA изготовлена ​​​​«Integrated Device Technology» и имеет функцию, называемую «3.3V CMOS Static RAM 1 Meg (64K x 16-Bit)».

Детали детали

Номер произв 71V016SA
Описание 3.3V CMOS Static RAM 1 Meg (64K x 16-Bit)
Производители Integrated Device Technology
логотип Integrated Device Technology логотип 

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71V016SA Даташит, Описание, Даташиты
3.3V CMOS Static RAM
1 Meg (64K x 16-Bit)
IDT71V016SA
Features
x 64K x 16 advanced high-speed CMOS Static RAM
x Equal access and cycle times
— Commercial: 10/12/15/20ns
— Industrial: 12/15/20ns
x One Chip Select plus one Output Enable pin
x Bidirectional data inputs and outputs directly
LVTTL-compatible
x Low power consumption via chip deselect
x Upper and Lower Byte Enable Pins
x Single 3.3V power supply
x Available in 44-pin Plastic SOJ, 44-pin TSOP, and
48-Ball Plastic FBGA packages
Functional Block Diagram
Output
OE Enable
Buffer
Description
The IDT71V016 is a 1,048,576-bit high-speed Static RAM organized
as 64K x 16. It is fabricated using IDT’s high-perfomance, high-reliability
CMOS technology. This state-of-the-art technology, combined with inno-
vative circuit design techniques, provides a cost-effective solution for high-
speed memory needs.
The IDT71V016 has an output enable pin which operates as fast
as 5ns, with address access times as fast as 10ns. All bidirectional
inputs and outputs of the IDT71V016 are LVTTL-compatible and operation
is from a single 3.3V supply. Fully static asynchronous circuitry is used,
requiring no clocks or refresh for operation.
The IDT71V016 is packaged in a JEDEC standard 44-pin Plastic
SOJ, a 44-pin TSOP Type II, and a 48-ball plastic 7 x 7 mm FBGA.
A0 – A15
Address
Buffers
Chip
CS Enable
Buffer
Write
WE Enable
Buffer
BHE
BLE
Byte
Enable
Buffers
©2000 Integrated Device Technology, Inc.
Row / Column
Decoders
64K x 16
Memory
Array
8
Sense
16 Amps
and
Write
Drivers
8
High
Byte
I/O
Buffer
Low
Byte
I/O
Buffer
I/O15
8
I/O8
I/O7
8
I/O0
3834 drw 01
JUNE 2002
1
DSC-3834/06









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71V016SA Даташит, Описание, Даташиты
IDT71V016SA, 3.3V CMOS Static RAM
1 Meg (64K x 16-Bit)
Pin Configurations
A4
A3
A2
A1
A0
CS
I/O0
I/O1
I/O2
I/O3
VDD
VSS
I/O4
I/O5
I/O6
I/O7
WE
A15
A14
A13
A12
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
SO44-1
SO44-2
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
BHE
BLE
I/O15
I/O14
I/O13
I/O12
VSS
VDD
I/O11
I/O10
I/O9
I/O8
NC
A8
A9
A10
A11
NC
SOJ/TSOP
Top View
3834 drw 02
Truth Table(1)
CS OE WE BLE BHE
HX X
LLH
LLH
LLH
LX L
LX L
LX L
LHH
LXX
X
L
H
L
L
L
H
X
H
X
H
L
L
L
H
L
X
H
NOTE:
1. H = VIH, L = VIL, X = Don't care.
Commercial and Industrial Temperature Ranges
12 3 4 5 6
A BLE
OE
A0
A1
A2
NC
B I/O8
BHE
A3
A4
CS I/O0
C I/O9
I/O10
A5
A6 I/O1 I/O2
D VSS
I/O11
NC
A7
I/O3 VDD
E VDD
I/O12
NC
NC
I/O4 VSS
F I/O14
I/O13
A14
A15
I/O5 I/O6
G I/O15
NC
A12
A13
WE
I/O7
H NC
A8
A9 A10
FBGA (BF48-1)
Top View
Pin Description
A0 – A15
Address Inputs
CS Chip Select
WE Write Enable
OE Output Enable
BHE High Byte Enable
BLE Low Byte Enable
I/O0 – I/O15
Data Input/Output
VDD 3.3V Power
VSS Ground
A11 NC
3834 tbl 02a
Input
Input
Input
Input
Input
Input
I/O
Power
Gnd
3834 tbl 01
I/O0-I/O7
High-Z
DATAOUT
High-Z
DATAOUT
DATAIN
DATAIN
High-Z
High-Z
High-Z
I/O8-I/O15
High-Z
High-Z
DATAOUT
DATAOUT
DATAIN
High-Z
DATAIN
High-Z
High-Z
Function
Deselected – Standby
Low Byte Read
High Byte Read
Word Read
Word Write
Low Byte Write
High Byte Write
Outputs Disabled
Outputs Disabled
3834 tbl 02
6.422









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71V016SA Даташит, Описание, Даташиты
IDT71V016SA, 3.3V CMOS Static RAM
1 Meg (64K x 16-Bit)
Commercial and Industrial Temperature Ranges
Absolute Maximum Ratings(1)
Recommended Operating
Symbol
Rating
Value Unit Temperature and Supply Voltage
VDD
VIN, VOUT
TBIAS
Supply Voltage Relative to
VSS
Terminal Voltage Relative
to VSS
Temperature Under Bias
–0.5 to +4.6
–0.5 to VDD+0.5
–55 to +125
V
V
oC
Grade
Commercial
Industrial
Temperature
0°C to +70°C
-40°C to +85°C
VSS VDD
0V See Below
0V See Below
3834 tbl 04
TSTG Storage Temperature
PT Power Dissipation
–55 to +125
1.25
oC Recommended DC Operating
W Conditions
IOUT DC Output Current
50 mA
NOTE:
3834 tbl 03
1. StressesgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
Capacitance
(TA = +25°C, f = 1.0MHz, SOJ package)
Symbol
Parameter(1)
Conditions
Max. Unit
CIN Input Capacitance
VIN = 3dV
6 pF
CI/O I/O Capacitance
VOUT = 3dV
7 pF
Symbol
Parameter
VDD(1) Supply Voltage
VDD(2) Supply Voltage
Min. Typ. Max. Unit
3.15 3.3 3.6 V
3.0 3.3 3.6 V
Vss Ground
0 0 0V
VIH Input High Voltage
VIL Input Low Voltage
2.0
–0.3(4)
____ VDD+0.3(3) V
____ 0.8 V
NOTES:
1. For 71V016SA10 only.
2. For all speed grades except 71V016SA10.
3. VIH (max.) = VDD+2V for pulse width less than 5ns, once per cycle.
4. VIL (min.) = –2V for pulse width less than 5ns, once per cycle.
3834 tbl 05
NOTE:
3834 tbl 06
1. This parameter is guaranteed by device characterization, but not production tested.
DC Electrical Characteristics
(VDD = Min. to Max., Commercial and Industrial Temperature Ranges)
IDT71V016SA
Symbol
Parameter
Test Condition
|ILI| Input Leakage Current
|ILO| Output Leakage Current
VOL Output Low Voltage
VDD = Max., VIN = VSS to VDD
VDD = Max., CS = VIH, VOUT = VSS to VDD
IOL = 8mA, VDD = Min.
VOH Output High Voltage
IOH = –4mA, VDD = Min.
DC Electrical Characteristics(1,2)
(VDD = Min. to Max., VLC = 0.2V, VHC = VDD – 0.2V)
71V016SA10 71V016SA12
Min. Max. Unit
___ 5 µ A
___ 5 µ A
___ 0.4 V
2.4 ___ V
3834 tbl 07
71V016SA15 71V016SA20
Symbol
Parameter
Com'l Only Com'l Ind Com'l Ind Com'l Ind Unit
ICC Dynamic Operating Current
Max.
CS VLC, Outputs Open, VDD = Max., f = fMAX(3) Typ.(4)
160
125
150 160 130 130 120 120 mA
120 -- 110 -- 110 --
ISB Dynamic Standby Power Supply Current
CS VHC, Outputs Open, VDD = Max., f = fMAX(3)
45 40 45 35 35 30 30 mA
ISB1 Full Standby Power Supply Current (static)
CS VHC, Outputs Open, VDD = Max., f = 0(3)
10 10 10 10 10 10 10 mA
NOTES:
1. All values are maximum guaranteed values.
2. All inputs switch between 0.2V (Low) and VDD – 0.2V (High).
3. fMAX = 1/tRC (all address inputs are cycling at fMAX); f = 0 means no address input lines are changing .
4. Typical values are measured at 3.3V, 25°C and with equal read and write cycles.
3834 tbl 08
6.432










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Номер в каталогеОписаниеПроизводители
71V016SA3.3V CMOS Static RAM 1 Meg (64K x 16-Bit)Integrated Device Technology
Integrated Device Technology

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