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6N138 PDF даташит

Спецификация 6N138 изготовлена ​​​​«Siemens Semiconductor Group» и имеет функцию, называемую «LOW INPUT CURRENT/ HIGH GAIN OPTOCOUPLER».

Детали детали

Номер произв 6N138
Описание LOW INPUT CURRENT/ HIGH GAIN OPTOCOUPLER
Производители Siemens Semiconductor Group
логотип Siemens Semiconductor Group логотип 

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6N138 Даташит, Описание, Даташиты
FEATURES
• High Current Transfer Ratio, 800%
• Low Input Current, 0.5mA
• High Output Current, 60mA
• Isolation Test Voltage, 2500 VACRMS
• TTL Compatible Output, VOL=0.1 V
• High Common Mode Rejection, 500V/µsec.
• Adjustable Bandwidth–Access to Base
• Standard Molded Dip Plastic Package
• Underwriters Lab File #E52744
APPLICATIONS
• Logic Ground Isolation–TTL/TTL, TTL/CMOS,
CMOS/CMOS, CMOS/TTL
• EIA RS 232C Line Receiver
• Low Input Current Line Receiver–Long Lines,
Party Lines
• Telephone Ring Detector
• 117 VAC Line Voltage Status Indication–Low
Input Power Dissipation
• Low Power Systems–Ground Isolation
DESCRIPTION
High common mode transient immunity and very
high current ratio together with 2500 VAC insulation
are achieved by coupling an LED with an integrated
high gain photo detector in an eight pin dual-in-line
package. Separate pins for the photodiode and out-
put stage enable TTL compatible saturation volt-
ages with high speed operation. Photodarlington
operation is achieved by tying the VCC and VO ter-
minals together. Access to the base terminal allows
adjustment to the gain bandwidth.
The 6N138 is ideal for TTL applications since the
300% minimum current transfer ratio with an LED
current of 1.6 mA enables operation with one unit
load-in and one unit load-out with a 2.2 Kpull-up
resistor.
The 6N139 is best suited for low power logic appli-
cations involving CMOS and low power TTL. A
400% current transfer ratio with only 0.5 mA of LED
current is guaranteed from 0°C to 70°C.
Caution:
Due to the small geometries of this device, it should be
handled with Electrostatic Discharge (ESD) precau-
tions. Proper grounding would prevent damage further
and/or degradation which may be induced by ESD.
6N138
6N139
LOW INPUT CURRENT, HIGH GAIN
OPTOCOUPLER
Dimensions in inches (mm)
43 21
.268 (6.81)
.255 (6.48)
56 78
.390 (9.91)
.379 (9.63)
.045 (1.14)
.030 (.76)
Pin
One
I.D. NC 1
Anode 2
Cathode 3
NC 4
8 VCC
7 VB
6 V0
5 GND
.305 typ.
(7.75) typ.
4°
Typ.
.022 (.56)
.018 (.46)
.150 (3.81)
.130 (3.30)
.040 (1.02)
.030 (.76 )
.100 (2.54) Typ.
10 °
Typ.
3°–9°.012 (.30)
.008 (.20)
.135 (3.43)
.115 (2.92)
Maximum Ratings
Reverse Input Voltage ..........................................................................5 V
Supply and Output Voltage, VCC (pin 8-5), VO (pin 6-5)
6N138 ................................................................................... –0.5 to 7 V
6N139 ................................................................................. –0.5 to 18 V
Emitter-Base Reverse Voltage (pin 5-7) ............................................0.5 V
Average Input Current.....................................................................20 mA
Peak Input Current (50% Duty Cycle–1 ms pulse width) ................40 mA
Peak Transient Input Current (tp1 µsec, 300 pps ...........................1.0 A
Output Current IO (pin 6) .................................................................60 mA
Derate linearly above 25°C, free air temperature at 0.7 mA/°C
Input Power Dissipation .................................................................35 mW
Derate linearly above 50%, free air temperature at 0.7 mW/°C
Output Power Dissipation.............................................................100 mW
Derate linearly above 25°C, free air temperature at 0.2 mA/°C
Isolation Test Voltage........................................................... 2500 VACRMS
Isolation Resistance
VIO=500 V, TA=25°C .........................................................................≥1012
VIO=500 V, TA=100°C.......................................................................≥1011
Storage Temperature......................................................–55°C to +125°C
Operating Temperature ..................................................–55°C to +100°C
Lead Soldering Temperature (t=10 sec.) ........................................260°C
5–1









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6N138 Даташит, Описание, Даташиты
Electro-Optical Characteristics (TA=0°C to 70°C, TA=25°C–Typical, unless otherwise specified)
Parameter
Symbol Device
Min Typ.
.
Max. Units Test Conditions
Current Transfer Ratio
Logic Low
Output Voltage
Logic High
Output Current
Logic Low Supply Current
Logic High Supply Current
Input Forward Voltage
Input Reverse Breakdown
Voltage
CTR
VOL
IOH
ICCL
ICCH
VF
BVR
6N138
300 1600
% IF=1.6 mA, VO=0.4 V, VCC=4.5 V
6N139
400 1600
500 2000
% IF=0.5 mA, VO=0.4 V, VCC=4.5 V
IF=1.6 mA, VO=0.4 V, VCC=4.5 V
6N138
0.1 0.4 V
IF=1.6 mA, IO=4.8 mA, VCC=4.5 V
6N139
6N139
6N139
0.1 0.4
0.15 0.4
0.25 0.4
V
IF=1.6 mA, IO=8 mA, VCC=4.5 V
IF=5 mA, IO=15 mA, VCC=4.5 V
IF=12 mA, IO=24 mA, VCC=4.5 V
6N138
0.1 250 µA IF=0 mA, VO=VCC=7 V
6N139
0.05 100
µA
IF=0 mA, VO=VCC=18 V
0.2 1.5 mA IF=1.6 mA, VO=OPEN, VCC=18 V
0.001 10 µA IF=0 mA, VO=OPEN, VCC=18 V
1.4 1.7 V
IF=1.6 mA, TA=25°C
5 V IR=10 µA
Temperature Coefficient of
Forward Voltage
-1.8 mV/°C IF=1.6 mA
Input Capacitance
Input-Output Insulation
Leakage Current
Resistance (Input-Output)
Capacitance (Input-Output)
CIN
I-0
RI-O
CI-O
25 pF f=1 MHz, VF=0
1.0 µA 45% Relative Humidity, TA=25°C
t=5S, V1-0=3000 VDC
1012
VIO=500 VDC
0.6 pF f=1 MHz
Note
5.6
5.6
6
6
6
6
6
6
7
7
7
Switching Specifications (TA=25°C)
Parameter
Symbol Device Min Typ.
.
Max. Units Test Conditions
Note
Propagation Delay Time
To Logic Low at Output
Propagation Delay Time
To Logic High at Output
Common Mode Transient Immunity at Logic
High Level Output
Common Mode Transient Immunity at Logic
Low Level Ouput
tPHL
tPLH
CMH
CML
6N138
6N139
6N138
6N139
2 10
6 25
0.6 1
2 35
4 60
1.5 7
500
–500
µS
µS
µS
µS
V/µS
V/µS
IF=1.6 mA, RL=2.2 K
IF=0.5 mA, RL=4.7 K
IF=12 mA, RL=270
IF=1.6 mA, RL=2.2 K
IF=0.5 mA, RL=4.7 K
IF=12 mA, RL=270
IF=0 mA, RL=2.2 K
RCC=0/VCM/=10 Vp-p
IF=1.6 mA, RL=2.2 K
RCC=0/VCM/=10 Vp-p
6,8
6,8
9,10
9,10
Notes
1.Derate linearly above 50°C free-air temperature at a rate of 0.4 mA/°C.
2.Derate linearly above 50°C free-air temperature at a rate of 0.7 mW/°C.
3.Derate linearly above 25°C free-air temperature at a rate of 0.7 mA/°C.
4.Derate linearly above 25°C free-air temperature at a rate of 2.0 mW/°C.
5.DC current transfer ratio is defined as the ratio of outpput collector current, IO, to the forward LED input current, IF times 100%.
6.Pin 7 open.
7.Device considered a two-terminal device: pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7 and 8 shorted together.
8.Using a resistor between pin 5 and 7 will decrease gain and delay time.
9.Common mode transient immunity in logic high level is the maximum tolerable (positive) dVcm/dt on the leading edge of the common mode
pulse, VCM, to assure that the output will remain in a logic high state (i.e. VO>2.0 V) common mode transient immunity in logic low level is the
maximum tolerable (negative) dVcm/dt on the trailing edge of the common mode pulse signal, VCM, to assure that the output will remain in a
logic low state (i.e. VO<0.8 V).
10.In applications where dv/dt may exceed 50,000 V/µs (such as state discharge) a series resistor, RCC should be included to protect IC from
destructively high surge currents. The recommended value is RCC 0----.-1----5---I--IF--V--(---m-----A----)--k
6N139/139
5–2










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