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6MBI15S-120 PDF даташит

Спецификация 6MBI15S-120 изготовлена ​​​​«Fuji Electric» и имеет функцию, называемую «IGBT MODULE ( S series)1200V / 15A».

Детали детали

Номер произв 6MBI15S-120
Описание IGBT MODULE ( S series)1200V / 15A
Производители Fuji Electric
логотип Fuji Electric логотип 

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6MBI15S-120 Даташит, Описание, Даташиты
6MBI15S-120
IGBT MODULE ( S series)
1200V / 15A 6 in one-package
Features
· Compact package
· P.C.board mount
· Low VCE(sat)
Applications
· Inverter for motor drive
· AC and DC servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as welding machines
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item
Symbol
Collector-Emitter voltage
VCES
Gate-Emitter voltage
VGES
Collector Continuous Tc=25°C IC
current
Tc=80°C
1ms Tc=25°C IC pulse
Tc=80°C
-IC
1ms -IC pulse
Max. power dissipation (1 device) PC
Operating temperature
Tj
Storage temperature
Tstg
Isolation voltage
Vis
Screw torque
Mounting *1
Rating
Unit
1200
V
±20 V
25 A
15
50 A
30
15 A
30 A
110 W
+150
°C
-40 to +125
°C
AC 2500 (1min.) V
3.5 N·m
*1 : Recommendable value : 2.5 to 3.5 N·m (M5)
IGBT Modules
Equivalent Circuit Schematic
13(P)
1(Gu)
5(Gv)
9(Gw)
2(Eu)
3(Gx)
4(Ex)
17(N)
6(Ev)
16(U)
7(Gy)
8(Ey)
10(Ew)
15(V)
11(Gz)
12(Ez)
14(W)
Electrical characteristics (Tj=25°C unless otherwise specified)
Item
Symbol
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
ICES
IGES
VGE(th)
VCE(sat)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Diode forward on voltage
Cies
Coes
Cres
ton
tr
tr(i)
toff
tf
VF
Reverse recovery time
trr
Characteristics
Min.
Typ.
––
––
5.5 7.2
– 2.3
– 2.8
– 1800
– 375
– 330
– 0.35
– 0.25
– 0.1
– 0.45
– 0.08
– 2.5
– 2.0
––
Max.
1.0
0.2
8.5
2.6
1.2
0.6
1.0
0.3
3.3
0.35
Conditions
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=15mA
Tj=25°C VGE=15V, IC=15A
Tj=125°C
VGE=0V
VCE=10V
f=1MHz
VCC=600V
IC=15A
VGE=±15V
RG=82 ohm
Tj=25°C
Tj=125°C
IF=15A
IF=15A, VGE=0V
Unit
mA
µA
V
V
pF
µs
V
µs
Thermal resistance characteristics
Item
Symbol
Characteristics
Conditions
Min.
Typ.
Max.
Rth(j-c)
– 1.14 IGBT
Thermal resistance
Rth(j-c)
– 1.85 FWD
Rth(c-f)*2
0.05 –
the base to cooling fin
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
Unit
°C/W
°C/W
°C/W









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6MBI15S-120 Даташит, Описание, Даташиты
6MBI15S-120
Characteristics
Collector current vs. Collector-Emitter voltage
Tj= 25 oC (typ.)
35
VGE= 20V 15V 12V
30
25
20
10V
15
10
5
8V
0
012345
Collector - Emitter voltage : VCE [ V ]
35
30
25
20
15
10
5
0
0
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
Tj= 25 oC
Tj= 125 oC
1234
Collector - Emitter voltage : VCE [ V ]
5
5000
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25 oC
1000
500
Cies
100
50
0
Coes
Cres
5 10 15 20 25
Collector - Emitter voltage : VCE [ V ]
30
35
IGBT Modules
35
30
25
20
15
10
5
0
0
Collector current vs. Collector-Emitter voltage
Tj= 125 oC (typ.)
VGE= 20V 15V 12V
10V
1234
Collector - Emitter voltage : VCE [ V ]
8V
5
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25 oC (typ.)
10
8
6
4
2
0
5
1000
Ic= 30A
Ic= 15A
Ic= 7.5A
10 15 20
Gate - Emitter voltage : VGE [ V ]
25
Dynamic Gate charge (typ.)
Vcc=600V, Ic=15A, Tj= 25 oC
25
800 20
600 15
400 10
200 5
00
0 50 100 150
Gate charge : Qg [ nC ]









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6MBI15S-120 Даташит, Описание, Даташиты
6MBI15S-120
IGBT Modules
1000
Switching time vs. Collector current (typ.)
Vcc=600V,VGE=±15V, Rg=82,Tj=25oC
toff
500
ton
tr
100
tf
50
0
5 10 15
Collector current : Ic [ A ]
20
5000
Switching time vs. Gate resistance (typ.)
Vcc=600V,Ic=15A,VGE=±15V,Tj=25oC
25
1000
500
toff
ton
tr
100
tf
50
30
100
Gate resistance : Rg [ ]
1000
Switching loss vs. Gate resistance (typ.)
Vcc=600V,Ic=15A,VGE=±15V,Tj=125oC
12
10 Eon
8
6
4
Eoff
2
Err
0
30 100
1000
Gate resistance : Rg [ ]
1000
500
Switching time vs. Collector current (typ.)
Vcc=600V,VGE=±15V, Rg=82,Tj=125oC
toff
ton
tr
tf
100
50
0
5 10 15
Collector current : Ic [ A ]
20
Switching loss vs. Collector current (typ.)
Vcc=600V,VGE=±15V, Rg=82
5
25
4
Eon(125 oC)
3
Eon(25 oC)
2
Eoff(125 oC)
Eoff(25 oC)
1
Err(125 oC)
Err(25 oC)
0
0 5 10 15 20 25 30
Collector current : Ic [ A ]
Reverse bias safe operating area
+VGE=15V, -VGE<=15V, Rg>=82,Tj=<125oC
40
30
20
10
0
0
200
400
600
800
1000
1200
1400
Collector - Emitter voltage : VCE [ V ]










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Номер в каталогеОписаниеПроизводители
6MBI15S-120IGBT MODULE ( S series)1200V / 15AFuji Electric
Fuji Electric
6MBI15S-120LIGBT MODULE ( S-Series )Fuji Electric
Fuji Electric

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