63CTQ100 PDF даташит
Спецификация 63CTQ100 изготовлена «International Rectifier» и имеет функцию, называемую «Schottky Rectifier ( Diode )». |
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Детали детали
Номер произв | 63CTQ100 |
Описание | Schottky Rectifier ( Diode ) |
Производители | International Rectifier |
логотип |
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SCHOTTKY RECTIFIER
Bulletin PD-20635 rev. A 12/01
63CTQ100
60 Amp
Major Ratings and Characteristics
Characteristics
Values
IF(AV) Rectangular waveform
(Per Device)
IFRM @ TC = 139°C
(Per Leg)
VRRM
IFSM @ tp = 5 µs sine
VF @ 30 Apk, TJ = 125°C
TJ range
60
60
100
1500
0.69
- 65 to 175
Units
A
A
V
A
V
°C
Description/Features
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 175° C junction
temperature. Typical applications are in switching power
supplies, converters, free-wheeling diodes, and reverse bat-
tery protection.
175° C TJ operation
Center tap TO-220 package
Low forward voltage drop
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
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Case Styles
63CTQ100
TO-220
Base
Common
Cathode
2
1
Anode
2
Common
Cathode
3
Anode
1
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63CTQ100
Bulletin PD-20635 rev. A 12/01
Voltage Ratings
Parameters
63CTQ100
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
100
Absolute Maximum Ratings
Parameters
IF(AV) Max. Average Forward (PerLeg)
Current
(Per Device)
IFRM Peak Repetitive Forward
Current
(Per Leg)
IFSM Max.PeakOneCycleNon-Repetitive
Surge Current
(Per Leg)
EAS
Non -Repetitive Avalanche Energy
(Per Leg)
IAR Repetitive Avalanche Current
(Per Leg)
Values
30
60
60
1500
300
11.25
0.75
Units Conditions
A 50% duty cycle @ TC = 139°C, rectangular wave form
A Rated VR, square wave, 20kHz
TC = 140° C
A
5µs Sine or 3µs Rect. pulse
10ms Sine or 6ms Rect. pulse
Following any rated load
condition and with rated
VRRM applied
mJ TJ = 25°C, IAS = 0.75Amps, L = 40mH
A Current decaying linearty to zero in 1 µsec
Frequency limited by TJ max. VA = 1.5 x VR typical
Electrical Specifications
Parameters
Typ. Max. Units Conditions
VFM Max. Forward Voltage Drop
(1)
IRM Max. Instantaneus Reverse Current
CT Max. Junction Capacitance
LS Typical Series Inductance
dv/dt Max. Voltage Rate of Change
(Rated VR)
(1) Pulse Width < 300µs, Duty Cycle <2%
0.78 0.82
0.94 1.0
0.64 0.69
0.78 0.83
0.02 0.3
11 20
1100
8.0
10000
V
V
V
V
mA
mA
pF
nH
V/ µs
@ 30A
TJ = 25 °C
@ 60A
@ 30A
@ 60A
TJ = 125 °C
TJ = 25 °C Rated DC voltage
TJ = 125 °C
VR = 5VDC (test signal range 100Khz to 1Mhz) 25°C
Measured from top of terminal to mounting plane
Thermal-Mechanical Specifications
Parameters
Values
TJ Max. Junction Temperature Range
Tstg Max. Storage Temperature Range
RthJC Max. Thermal Resistance
Junction to Case (Per Leg)
RthCS Typical Thermal Resistance
Case to Heatsink
wt Approximate Weight
T Mounting Torque
Min.
Max.
-65 to 175
-65 to 175
1.2
0.50
2 (0.07)
6 (5)
12 (10)
Units Conditions
°C
°C
°C/W
DC operation
°C/W Mounting surface, smooth and greased
g (oz.)
Kg-cm Non-lubricated threads
(Ibf-in)
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1000
100
10
63CTQ100
Bulletin PD-20635 rev. A 12/01
1000
100
10
1
0.1
0.01
Tj = 175˚C
150˚C
125˚C
100˚C
75˚C
50˚C
25˚C
0.001
0.0001
0
20 40 60 80 100
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
1000
Tj = 25˚C
Tj = 175˚C
Tj = 125˚C
Tj = 25˚C
1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10
100
0 20 40 60 80 100
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
D = 0.75
1 D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.1
Single Pulse
0.01 (Thermal Resistance)
Notes:
PDM
t1
t2
1. Duty factor D = t1/ t2
0.001
0.00001
2. Peak Tj = Pdm x ZthJC + Tc
0.0001
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
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10
3
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