2SD2423 PDF даташит
Спецификация 2SD2423 изготовлена «Hitachi Semiconductor» и имеет функцию, называемую «Silicon NPN Epitaxial/ Darlington». |
|
Детали детали
Номер произв | 2SD2423 |
Описание | Silicon NPN Epitaxial/ Darlington |
Производители | Hitachi Semiconductor |
логотип |
6 Pages
No Preview Available ! |
2SD2423
Silicon NPN Epitaxial, Darlington
Application
Low frequency power amplifier
Features
The transistor with a built-in zener diode of surge absorb.
Outline
UPAK
1
2
3
1
4 1. Base
2. Collector
3. Emitter
4. Collector (Flange)
2, 4
2 kΩ
(Typ)
0.5 Ω
(Typ)
3
ID
No Preview Available ! |
2SD2423
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
VCBO
VCEO
VEBO
IC
PC * 1
Tj
50
50
7
1.5
1
150
Storage temperature
Tstg –55 to +150
Collector to emitter diode forward current
ID
1.5
Note: 1. When using the ceramic board 0.7 mm thick (12.5 mm x 20 mm).
Unit
V
V
V
A
W
°C
°C
A
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown
voltage
V(BR)CBO
50
Collector to emitter breakdown V(BR)CEO
voltage
50
Collector to emitter sustaining VCEO(sus) 50
voltage
Emitter to base breakdown
voltage
V(BR)EBO
7
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
I CEO
hFE
VCE(sat)1
—
2000
—
Collector to emitter saturation VCE(sat)2
voltage
—
Base to emitter saturation
voltage
VBE(sat)1
—
Base to emitter saturation
voltage
VBE(sat)2
—
Emitter to collector diode
forward voltage
VD
—
Notes: 1. Pulse test
2. Marking is “GT”.
Typ
—
—
—
—
—
—
—
—
—
—
—
Max Unit
70 V
—V
70 V
—V
10 µA
10000
1.5 V
2.3 V
2.0 V
2.5 V
3.5 V
Test conditions
IC = 100 µA, IE = 0
IC = 10 mA, RBE = ∞
IC = 1.5 A, RBE = ∞,
L = 10 mH*1
IE = 50 mA, IC = 0
VCE = 40 V, RBE = ∞
VCE = 3 V, IC = 1 A*1
IC = 1 A, IB = 1 mA*1
IC = 1.5 A, IB = 1.5 mA*1
IC = 1 A, IB = 1 mA*1
IC = 1.5 A, IB = 1.5 mA*1
ID = 1.5 A*1
2
No Preview Available ! |
Maximum Collector Dissipation Curve
2.0
2SD2423
Area of Safe Operation
10
1.5 1
1.0 0.1 DC Operation
0.5 0.01
Ta = 25°C
0.001 1 shot pulse
0
50 100 150 200
0.1
1
10 100
Ambient Temperature Ta (°C)
Cellector to Emitter Voltage VCE (V)
Typical Output Characteristics
2.0
Pc = 1 W
1 mA
0.9 mA
0.8 mA
1.6 0.7 mA
0.6 mA
0.5 mA
0.4 mA
1.2
0.3 mA
0.8
0.4 0.2 mA
I B = 0 Ta = 25°C
0 12 345
Collector to Emitter Voltage VCE (V)
10000
5000
DC Current Transfer Ratio vs.
Collector Current
Ta = 75°C
VCE = 3 V
pulse
2000
1000
500
25°C
–25°C
200
100
0.1 0.2 0.5 1 2
5
Collector Current I C (A)
10
3
Скачать PDF:
[ 2SD2423.PDF Даташит ]
Номер в каталоге | Описание | Производители |
2SD2420 | Silicon NPN triple diffusion planer type Darlington(For power amplification) | Panasonic Semiconductor |
2SD2422 | Silicon NPN Power Transistor | Inchange Semiconductor |
2SD2423 | Silicon NPN Epitaxial/ Darlington | Hitachi Semiconductor |
2SD2425 | NPN Silicon Epitaxial Transistor | NEC Electronics |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |