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2SD1922 PDF даташит

Спецификация 2SD1922 изготовлена ​​​​«Hitachi Semiconductor» и имеет функцию, называемую «Silicon NPN Epitaxial».

Детали детали

Номер произв 2SD1922
Описание Silicon NPN Epitaxial
Производители Hitachi Semiconductor
логотип Hitachi Semiconductor логотип 

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2SD1922 Даташит, Описание, Даташиты
2SD1922
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
TO-92MOD
3
2
1
3
1. Emitter
2. Collector
3. Base
2
ID
1









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2SD1922 Даташит, Описание, Даташиты
2SD1922
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
E to C diode forward current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ic (peak)
ID
PC
Tj
Tstg
Ratings
25
25
6
0.8
1.5
0.8
0.9
150
–55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown
voltage
V(BR)CBO
25
Collector to emitter breakdown V(BR)CEO
voltage
25
Collector to emitter sustaining VCEO(sus) 25
voltage
Emitter to base breakdown
voltage
V(BR)EBO
6
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
I CBO
I CEO
I EBO
hFE
VCE(sat)
250
E to C diode forward voltage
Note: 1. Pulse test
VD
Typ
Max Unit
—V
35 V
35 V
—V
0.2
0.5
0.2
1200
0.3
µA
µA
µA
V
1.1 V
Test conditions
IC = 10 µA, IE = 0
IC = 1 mA, RBE =
IC = 0.8 A, RBE = ,
L = 20 mH
IE = 10 µA, IC = 0
VCB = 20 V, IE = 0
VCE = 20 V, RBE =
VEB = 5 V, IC = 0
VCE = 2 V, IC = 0.1 A*1
IC = 0.8 A, IB = 80 mA*1
ID = 0.8 A*1
2









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2SD1922 Даташит, Описание, Даташиты
Maximum Collector Dissipation Curve
1.2
0.8
0.4
0 50 100 150
Ambient Temperature Ta (°C)
Area of Safe Operation of Emitter to
Collector Diode
10
Ta = 25°C
1 Shot Pulse
8
6
4
2
0
0.1 0.3 1.0 3
Pulse Width PW (ms)
10
2SD1922
Area of Safe Operation
10
3
iC(peak)
1.0 IC(max)
1 ms
0.3
0.1
0.03 Ta = 25°C
1 Shot Pulse
0.01
0.1 0.3 1.0
3
10 30 100
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
1.0 1.8 1.6
1.4
0.8 1.2
1.0
0.6 0.8
0.6
0.4 0.4
0.2 0.2 mA
IB = 0
Ta = 25°
0 2 4 6 8 10
Collector to Emitter Voltage VCE (V)
3










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