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PDF 2SD1525 Data sheet ( Hoja de datos )
| Número de pieza | 2SD1525 | |
| Descripción | NPN TRIPLE DIFFUSED TYPE (HIGH CURRENT SWITCHING APPLICATIONS) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SD1525 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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2SD1525
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)
2SD1525
High Current Switching Applications
Unit: mm
· High collector current: IC = 30 A
· High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A)
· Monolithic construction with built-in base-emitter shunt resistor.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
100
100
5
30
5
150
150
−55 to 150
Unit
V
V
V
A
A
W
°C
°C
Equivalent Circuit
COLLECTOR
BASE
≈ 2 kΩ
≈ 100 Ω
EMITTER
JEDEC
―
JEITA
―
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.)
1 2003-02-04
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SD1525.PDF ] | |
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