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PDF 2SD1261 Data sheet ( Hoja de datos )
| Número de pieza | 2SD1261 | |
| Descripción | Silicon NPN triple diffusion planar type Darlington(For power amplification) | |
| Fabricantes | Panasonic Semiconductor | |
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Power Transistors
2SD1261, 2SD1261A
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB938 and 2SB938A
s Features
q High foward current transfer ratio hFE
q High-speed switching
q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD1261
base voltage 2SD1261A
VCBO
60
80
V
Collector to 2SD1261
emitter voltage 2SD1261A
VCEO
60
80
V
8.5±0.2
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
8.5±0.2
6.0±0.3
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
5
8
4
40
1.3
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
s Electrical Characteristics (TC=25˚C)
V
A
A
W
˚C
˚C
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff
2SD1261
current
2SD1261A
Collector cutoff
2SD1261
current
2SD1261A
Emitter cutoff current
Collector to emitter 2SD1261
voltage
2SD1261A
ICBO
ICEO
IEBO
VCEO
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
200
µA
200
500
µA
500
2 mA
60
V
80
Forward current transfer ratio
Base to emitter voltage
hFE1
hFE2*
VBE
Collector to emitter saturation voltage VCE(sat)
Transition frequency
Turn-on time
Storage time
Fall time
*hFE2 Rank classification
Rank
R
fT
ton
tstg
tf
Q
P
VCE = 3V, IC = 0.5A
VCE = 3V, IC = 3A
VCE = 3V, IC = 3A
IC = 3A, IB = 12mA
IC = 5A, IB = 20mA
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 3A, IB1 = 12mA, IB2 = –12mA,
VCC = 50V
Internal Connection
B
1000
1000
C
10000
2.5 V
2
V
4
20 MHz
0.5 µs
4 µs
1 µs
hFE2 1000 to 2500 2000 to 5000 4000 to 10000
E
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD1261.PDF ] | |
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