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2SC4517 PDF даташит

Спецификация 2SC4517 изготовлена ​​​​«Sanken electric» и имеет функцию, называемую «Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)».

Детали детали

Номер произв 2SC4517
Описание Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
Производители Sanken electric
логотип Sanken electric логотип 

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2SC4517 Даташит, Описание, Даташиты
2SC4517/4517A
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)
Application : Switching Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics
(Ta=25°C)
External Dimensions FM20(TO220F)
Symbol 2SC4517 2SC4517A Unit
Symbol
Conditions
2SC4517 2SC4517A Unit
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
900 1000
550
7
3(Pulse6)
1.5
30(Tc=25°C)
150
–55 to +150
V
V
V
A
A
W
°C
°C
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
VCB=800V
VEB=7V
IC=10mA
VCE=4V, IC=1A
IC=1A, IB=0.2A
IC=1A, IB=0.2A
VCE=12V, IE=–0.25A
VCB=10V, f=1MHz
100max
100max
550min
10 to 30
0.5max
1.2max
6typ
35typ
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V) () (A) (V) (V) (A)
250 250
1
10 –5 0.15
IB2
(A)
–0.45
ton
(µs)
0.7max
tstg
(µs)
4max
µA
µA
V
V
V
MHz
pF
tf
(µs)
0.5max
10.1±0.2
4.2±0.2
2.8 c0.5
ø3.3±0.2
a
b
1.35±0.15
1.35±0.15
2.54
0.85
+0.2
-0.1
2.54
0.45
+0.2
-0.1
2.2±0.2
2.4±0.2
Weight : Approx 2.0g
BCE
a. Type No.
b. Lot No.
I C– V CE Characteristics (Typical)
3 400mA
300mA
200mA
150mA
2
100mA
1 IB=40mA
VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
1.5
IC/IB=5 Const.
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
3
1.0
VBE(sat)
0.5
2
1
0
0 1 2 34
Collector-Emitter Voltage VCE(V)
0
0.03 0.05
VCE(sat)
0.1 0.5 1
Collector Current IC(A)
5
0
0 0.2 0.4 0.6 0.8 1.0
Base-Emittor Voltage VBE(V)
hFE–IC Temperature Characteristics (Typical)
(VCE=4V)
50
125˚C
25˚C
–55˚C
10
5
0.02
0.05
0.1 0.5
Collector Current IC(A)
1
3
t on• t stg• t f– I C Characteristics (Typical)
7
5
VCC 250V
IC:IB1:IB2=1:0.15:–0.45
1
0.5
tf
tstg
ton
0.1
0.2
0.5 1
Collector Current IC(A)
3
θ j-a– t Characteristics
4
1
0.5
0.3
1
10 100
Time t(ms)
1000
Safe Operating Area (Single Pulse)
10
5 100µs 50µs
1
0.5
Reverse Bias Safe Operating Area
10
5
1
0.5
Pc–Ta Derating
30
20
0.1
0.05
Without Heatsink
Natural Cooling
0.01
2
5 10
50 100
500 1000
Collector-Emitter Voltage VCE(V)
112
0.1
0.05
0.01
50
Without Heatsink
Natural Cooling
L=3mH
IB2=–1.0A
Duty:less than 1%
10
Without Heatsink
2SC4517 2SC4517A 2
100 500
Collector-Emitter Voltage VCE(V)
1000
0
0 25 50 75 100 125
Ambient Temperature Ta(˚C)
150










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