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4N32 PDF даташит

Спецификация 4N32 изготовлена ​​​​«Motorola Inc» и имеет функцию, называемую «STANDARD THRU HOLE CASE 730A-04».

Детали детали

Номер произв 4N32
Описание STANDARD THRU HOLE CASE 730A-04
Производители Motorola Inc
логотип Motorola  Inc логотип 

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4N32 Даташит, Описание, Даташиты
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
GlobalOptoisolator
6-Pin DIP Optoisolators
Darlington Output
The 4N29/A, 4N30, 4N31, 4N32(1) and 4N33(1) devices consist of a gallium
arsenide infrared emitting diode optically coupled to a monolithic silicon
photodarlington detector.
This series is designed for use in applications requiring high collector output
currents at lower input currents.
Higher Sensitivity to Low Input Drive Current
Meets or Exceeds All JEDEC Registered Specifications
To order devices that are tested and marked per VDE 0884 requirements, the
suffix “V” must be included at end of part number. VDE 0884 is a test option.
Applications
Low Power Logic Circuits
Interfacing and coupling systems of different potentials and impedances
Telecommunications Equipment
Portable Electronics
Solid State Relays
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
INPUT LED
Reverse Voltage
Forward Current — Continuous
LED Power Dissipation @ TA = 25°C
Derate above 25°C
VR 3 Volts
IF 60 mA
PD 120 mW
1.41 mW/°C
OUTPUT DETECTOR
Collector–Emitter Voltage
Emitter–Collector Voltage
Collector–Base Voltage
Collector Current — Continuous
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VECO
VCBO
IC
PD
30 Volts
5 Volts
30 Volts
150 mA
150 mW
1.76 mW/°C
TOTAL DEVICE
Isolation Surge Voltage(2)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
VISO
7500
Vac(pk)
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
PD 250 mW
2.94 mW/°C
Ambient Operating Temperature Range(3)
Storage Temperature Range(3)
TA – 55 to +100
Tstg – 55 to +150
°C
°C
Soldering Temperature (10 sec, 1/16from case)
TL 260 °C
1. Difference in 4N32 and 4N33 is JEDEC Registration for VISO only. All Motorola 6–Pin devices
exceed JEDEC specification and are 7500 Vac(pk). The same applies for 4N29 and 4N30.
2. Isolation surge voltage is an internal device dielectric breakdown rating. For this test, Pins 1 and
2 are common, and Pins 4, 5 and 6 are common.
3. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
Preferred devices are Motorola recommended choices for future use and best overall value.
GlobalOptoisolator is a trademark of Motorola, Inc.
REV 4
© MMoototroorlao,lIancO. 1p9t9o5electronics Device Data
Order this document
by 4N29/D
4N29
4N29A
4N30 *
[CTR = 100% Min]
4N31
[CTR = 50% Min]
4N32 *
4N33 *
[CTR = 500% Min]
*Motorola Preferred Devices
STYLE 1 PLASTIC
6
1
STANDARD THRU HOLE
CASE 730A–04
SCHEMATIC
16
25
34
PIN 1. LED ANODE
2. LED CATHODE
3. N.C.
4. EMITTER
5. COLLECTOR
6. BASE
1









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4N32 Даташит, Описание, Даташиты
4N29 4N29A 4N30 4N31 4N32 4N33
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1)
Characteristic
Symbol
Min
INPUT LED
*Reverse Leakage Current (VR = 3 V, RL = 1 M ohms)
*Forward Voltage (IF = 10 mA)
Capacitance (VR = 0 V, f = 1 MHz)
OUTPUT DETECTOR (TA = 25°C and IF = 0, unless otherwise noted)
*Collector–Emitter Dark Current
(VCE = 10 V, Base Open)
*Collector–Base Breakdown Voltage
(IC = 100 µA, IE = 0)
*Collector–Emitter Breakdown Voltage
(IC = 100 µA, IB = 0)
*Emitter–Collector Breakdown Voltage
(IE = 100 µA, IB = 0)
DC Current Gain
(VCE = 5 V, IC = 500 µA)
COUPLED (TA = 25°C unless otherwise noted)
*Collector Output Current (3)
4N32, 4N33
(VCE = 10 V, IF = 10 mA)
4N29, 4N30
4N31
Isolation Surge Voltage(4,5)
(60 Hz ac Peak, 1 Second)
4N29/A, 4N30, 31, 32, 33
*4N29, 4N32
*4N30, 4N31, 4N33
Isolation Resistance(4)
(V = 500 V)
*Collector–Emitter Saturation Voltage(3)
(IC = 2 mA, IF = 8 mA)
Isolation Capacitance(4)
(V = 0 V, f = 1 MHz)
4N31
4N29, 4N30, 4N32, 4N33
Turn–On Time(6)
(IC = 50 mA, IF = 200 mA, VCC = 10 V)
Turn–Off Time(6)
(IC = 50 mA, IF = 200 mA, VCC = 10 V) 4N29, 30, 31
4N32, 33
IR
VF
C
ICEO
V(BR)CBO
V(BR)CEO
V(BR)ECO
hFE
30
30
5
IC (CTR)(2)
VISO
RISO
50 (500)
10 (100)
5 (50)
7500
2500
1500
VCE(sat)
CISO
ton —
toff
* Indicates JEDEC Registered Data. All Motorola 6–pin devices have VISO rating of 7500 Vac(pk).
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = IC/IF x 100%.
p3. Pulse Test: Pulse Width = 300 µs, Duty Cycle 2%.
4. For this test, Pins 1 and 2 are common and Pins 4, 5 and 6 are common.
5. Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating.
6. For test circuit setup and waveforms, refer to Figure 11.
Typ(1)
0.05
1.34
1.8
16K
1011
0.2
0.6
17
45
Max Unit
100 µA
1.5 Volts
— pF
100 nA
— Volts
— Volts
— Volts
——
— mA (%)
— Vac(pk)
— Ohms
1.2 Volts
1
— pF
5 µs
µs
40
100
2 Motorola Optoelectronics Device Data









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4N32 Даташит, Описание, Даташиты
2
PULSE ONLY
1.8 PULSE OR DC
1.6
4N29 4N29A 4N30 4N31 4N32 4N33
TYPICAL CHARACTERISTICS
10
NORMALIZED TO: IF = 10 mA
TA = 25°C
1
1.4
TA = –55°C
1.2
25°C
1 100°C
1 10
100
IF, LED FORWARD CURRENT (mA)
1000
Figure 1. LED Forward Voltage versus Forward Current
0.1
TA = –55°C THRU
+25°C
+70°C
+100°C
0.01
0.5 1
2
5 10 20
50
IF, LED INPUT CURRENT (mA)
Figure 2. Output Current versus Input Current
140
120
IF = 10 mA
100
80
5 mA
60
40
2 mA
20
1 mA
0
0 1 2 3 4 5 6 7 8 9 10
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 3. Collector Current versus
Collector–Emitter Voltage
10
7
5 NORMALIZED TO TA = 25°C
2
1
0.7
0.5
0.2
0.1
–60 –40 –20 0 20 40 60 80 100
TA, AMBIENT TEMPERATURE (°C)
Figure 4. Output Current versus Ambient Temperature
1.3
NORMALIZED TO TA = 25°C
1.2
1.1
1
0.9
0.8
0.7
–60 –40 –20 0 20 40 60 80 100
TA, AMBIENT TEMPERATURE (°C)
Figure 5. Collector–Emitter Voltage versus
Ambient Temperature
105
104 NORMALIZED TO: VCE = 10 V
NORMALIZED TO: TA = 25°C
103
102
30 V
10
10 V
1
0 20 40 60 80 100
TA, AMBIENT TEMPERATURE (°C)
Figure 6. Collector–Emitter Dark Current versus
Ambient Temperature
Motorola Optoelectronics Device Data
3










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