Datasheet 4N30 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	4N30	STANDARD THRU HOLE CASE 730A-04 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 4N29/D 6-Pin DIP Optoisolators Darlington Output The 4N29/A, 4N30, 4N31, 4N32(1) and 4N33(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This series i	Motorola Inc	data
2	4N30	PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)	Toshiba Semiconductor	transistor
3	4N30	GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. 4N29 4N30 4N31 4N32 4N33 FEATURES • High sensitivity to low input drive current • Meets or exceeds	QT Optoelectronics	data
4	4N30	General Purpose 6-Pin Photodarlington Optocoupler 4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler April 2007 4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler Features ■ High sensitivity to low input drive current ■ Meets or exceeds all JEDEC Registered tm Description The 4N29, 4N3	Fairchild Semiconductor	data
5	4N30Z	40A 300V N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 4N30Z 4A, 300V N-CHANNEL POWER MOSFET DESCRIPTION Power MOSFET The U TC 4N30Z is an N-ch annel mod e p ower MOSF ET using UTC’s advanc ed techn ology to provid e customers with a minimum on-state res istance, lo w gate charge a nd superior s witching performance	UNISONIC TECHNOLOGIES	mosfet

4N3 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	4N30	STANDARD THRU HOLE CASE 730A-04 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 4N29/D 6-Pin DIP Optoisolators Darlington Output The 4N29/A, 4N30, 4N31, 4N32(1) and 4N33(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This series i	Motorola Inc	data
2	4N30	PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)	Toshiba Semiconductor	transistor
3	4N30	GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. 4N29 4N30 4N31 4N32 4N33 FEATURES • High sensitivity to low input drive current • Meets or exceeds	QT Optoelectronics	data
4	4N30	General Purpose 6-Pin Photodarlington Optocoupler 4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler April 2007 4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler Features ■ High sensitivity to low input drive current ■ Meets or exceeds all JEDEC Registered tm Description The 4N29, 4N3	Fairchild Semiconductor	data
5	4N30Z	40A 300V N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 4N30Z 4A, 300V N-CHANNEL POWER MOSFET DESCRIPTION Power MOSFET The U TC 4N30Z is an N-ch annel mod e p ower MOSF ET using UTC’s advanc ed techn ology to provid e customers with a minimum on-state res istance, lo w gate charge a nd superior s witching performance	UNISONIC TECHNOLOGIES	mosfet
6	4N31	STANDARD THRU HOLE CASE 730A-04 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 4N29/D 6-Pin DIP Optoisolators Darlington Output The 4N29/A, 4N30, 4N31, 4N32(1) and 4N33(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This series i	Motorola Inc	data
7	4N31	PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)	Toshiba Semiconductor	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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