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4N28 PDF даташит

Спецификация 4N28 изготовлена ​​​​«Vishay Telefunken» и имеет функцию, называемую «Optocoupler / Phototransistor Output».

Детали детали

Номер произв 4N28
Описание Optocoupler / Phototransistor Output
Производители Vishay Telefunken
логотип Vishay Telefunken логотип 

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4N28 Даташит, Описание, Даташиты
4N25, 4N26, 4N27, 4N28
Vishay Semiconductors
Optocoupler, Phototransistor Output, with Base Connection
A1
C2
NC 3
6B
5C
4E
21842
i179004-5
DESCRIPTION
The 4N25 family is an industry standard single channel
phototransistor coupler. This family includes the 4N25,
4N26, 4N27, 4N28. Each optocoupler consists of gallium
arsenide infrared LED and a silicon NPN phototransistor.
ORDER INFORMATION
PART
4N25
4N26
4N27
4N28
FEATURES
• Isolation test voltage 5000 VRMS
• Interfaces with common logic families
• Input-output coupling capacitance < 0.5 pF
• Industry standard dual-in-line 6 pin package
• Compliant to RoHS directive 2002/95/EC and
in accordance to WEEE 2002/96/EC
APPLICATIONS
• AC mains detection
• Reed relay driving
• Switch mode power supply feedback
• Telephone ring detection
• Logic ground isolation
• Logic coupling with high frequency noise rejection
AGENCY APPROVALS
• UL1577, file no. E52744
• BSI: EN 60065:2002, EN 60950:2000
• FIMKO: EN 60950, EN 60065, EN 60335
REMARKS
CTR > 20 %, DIP-6
CTR > 20 %, DIP-6
CTR > 10 %, DIP-6
CTR > 10 %, DIP-6
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
INPUT
Reverse voltage
Forward current
Surge current
t 10 μs
Power dissipation
OUTPUT
Collector emitter breakdown voltage
Emitter base breakdown voltage
Collector current
Power dissipation
t 1 ms
SYMBOL
VR
IF
IFSM
Pdiss
VCEO
VEBO
IC
IC
Pdiss
VALUE
5
60
3
100
70
7
50
100
150
UNIT
V
mA
A
mW
V
V
mA
mA
mW
www.vishay.com
132
For technical questions, contact: [email protected]
Document Number: 83725
Rev. 1.8, 07-Jan-10









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4N28 Даташит, Описание, Даташиты
4N25, 4N26, 4N27, 4N28
Optocoupler, Phototransistor Output, Vishay Semiconductors
with Base Connection
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
COUPLER
Isolation test voltage
Creepage distance
VISO
5000
7
VRMS
mm
Clearance distance
7 mm
Isolation thickness between emitter and
detector
0.4
mm
Comparative tracking index
DIN IEC 112/VDE 0303, part 1
175
Isolation resistance
Storage temperature
Operating temperature
Junction temperature
Soldering temperature (2)
VIO = 500 V, Tamb = 25 °C
VIO = 500 V, Tamb = 100 °C
max.10 s dip soldering:
distance to seating plane
1.5 mm
RIO
RIO
Tstg
Tamb
Tj
Tsld
1012
1011
- 55 to + 125
- 55 to + 100
125
260
Ω
Ω
°C
°C
°C
°C
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering condditions for through
hole devices (DIP).
ELECTRICAL CHARACTERISTICS (1)
PARAMETER
TEST CONDITION
PART SYMBOL MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage (2)
Reverse current (2)
Capacitance
OUTPUT
Collector base breakdown voltage (2)
Collector emitter breakdown voltage (2)
Emitter collector breakdown voltage (2)
IF = 50 mA
VR = 3 V
VR = 0 V
IC = 100 μA
IC = 1 mA
IE = 100 μA
4N25
VF
IR
CO
BVCBO
BVCEO
BVECO
70
30
7
1.3 1.5
0.1 100
25
5 50
V
μA
pF
V
V
V
nA
ICEO(dark) (2)
VCE = 10 V, (base open)
4N26
4N27
5 50 nA
5 50 nA
4N28
10 100 nA
ICBO(dark) (2)
VCB = 10 V,
(emitter open)
2 20 nA
Collector emitter capacitance
COUPLER
Isolation test voltage (2)
Saturation voltage, collector emitter
Resistance, input output (2)
Capacitance, input output
VCE = 0
Peak, 60 Hz
ICE = 2 mA, IF = 50 mA
VIO = 500 V
f = 1 MHz
CCE 6 pF
VIO 5000
V
VCE(sat)
0.5 V
RIO 100
GΩ
CIO 0.6 pF
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
(2) JEDEC registered values are 2500 V, 1500 V, 1500 V, and 500 V for the 4N25, 4N26, 4N27, and 4N28 respectively.
Document Number: 83725
Rev. 1.8, 07-Jan-10
For technical questions, contact: [email protected]
www.vishay.com
133









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4N28 Даташит, Описание, Даташиты
4N25, 4N26, 4N27, 4N28
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection
CURRENT TRANSFER RATIO (1)
PARAMETER
TEST CONDITION
DC current transfer ratio
VCE = 10 V, IF = 10 mA
Note
(1) Indicates JEDEC registered values.
PART
4N25
4N26
4N27
4N28
SYMBOL
CTRDC
CTRDC
CTRDC
CTRDC
MIN.
20
20
10
10
TYP.
50
50
30
30
MAX.
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
Rise and fall times
VCE = 10 V, IF = 10 mA, RL = 100 Ω
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
SYMBOL
tr, tf
MIN.
TYP.
2
MAX.
UNIT
%
%
%
%
UNIT
μs
1.4
1.3
TA = - 55 °C
1.2
1.1 TA = 25 °C
1.0
0.9
TA = 85 °C
0.8
0.7
0.1
i4n25_01
1 10 100
IF - Forward Current (mA)
Fig. 1 - Forward Voltage vs. Forward Current
1.5
Normalized to:
VCE = 10 V, IF = 10 mA, TA = 25 °C
CTRCE(sat) VCE = 0.4 V
1.0
TA = 50 °C
0.5
NCTR(SAT)
NCTR
0.0
0.1
i4n25_03
1 10
IF - LED Current (mA)
100
Fig. 3 - Normalized Non-Saturated and Saturated CTR vs.
LED Current
1.5
Normalized to:
V = 10 V, I = 10 mA, T = 25 °C
CE F
A
CTRCE(sat) = 0.4 V
1.0
TA = 25 °C
0.5
0.0
0
i4n25_02
NCTR(SAT)
NCTR
1 10
IF - LED Current (mA)
100
Fig. 2 - Normalized Non-Saturated and Saturated CTR vs.
LED Current
1.5
Normalized to:
VCE = 10 V, IF = 10 mA, TA = 25 °C
CTRCE(sat) VCE = 0.4 V
1.0
TA = 70 °C
0.5
NCTR(SAT)
NCTR
0.0
0.1
i4n25_04
1 10
IF - LED Current (mA)
100
Fig. 4 - Normalized Non-Saturated and Saturated CTR vs.
LED Current
www.vishay.com
134
For technical questions, contact: [email protected]
Document Number: 83725
Rev. 1.8, 07-Jan-10










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