4AM11 PDF даташит
Спецификация 4AM11 изготовлена «Hitachi Semiconductor» и имеет функцию, называемую «Silicon N-Channel/P-Channel Power MOS FET Array». |
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Детали детали
Номер произв | 4AM11 |
Описание | Silicon N-Channel/P-Channel Power MOS FET Array |
Производители | Hitachi Semiconductor |
логотип |
10 Pages
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4AM11
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
N-channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, ID = 2.5 A
P-channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –2.5 A
• Capable of 4 V gate drive
• Low drive current
• High speed switching
• High density mounting
• Suitable for H-bridged motor driver
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4AM11
Outline
Absolute Maximum Ratings (Ta = 25°C) (1 Unit)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 4 Devices operation
Rating
Symbol
Nch Pch
VDSS
60 –60
VGSS
±20 ±20
ID 5 –5
ID(pulse)*1
20 –20
IDR 5 –5
Pch (Tc = 25°C)*2 28
Pch*2
4
Tch 150
Tstg –55 to +150
Unit
V
V
A
A
A
W
W
°C
°C
2
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4AM11
Electrical Characteristics (Ta = 25°C) (1 Unit)
N channel
P channel
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Drain to source
breakdown voltage
V(BR)DS 60 — — –60 — — V
S
ID = 10 mA, VGS = 0
Gate to source
breakdown voltage
V(BR)GS ±20 — — ±20 — — V
S
IG = ±100 µA, VDS =
0
Gate to source leak
current
IGSS
— — ±10 — — ±10 µA VGS = ±16 V, VDS =
0
Zero gate voltage drain IDSS
current
— — 250 — — –250 µA VDS = 50 V, VGS = 0
Gate to source cutoff
voltage
VGS(off) 1.0 —
2.0 –1.0 —
–2.0 V
ID = 1 mA, VDS = 10
V
Static drain to source on RDS(on) —
state resistance
0.13 0.17 —
0.15 0.2 Ω
ID = 2.5 A,
VGS = 10 V*1
— 0.18 0.24 — 0.20 0.27 Ω
ID = 2.5 A, VGS = 4
V*1
Forward transfer
admittance
|yfs|
2.7 4.5 — 2.7 5.0 — S
ID = 2.5 A,
VDS = 10 V*1
Input capacitance
Ciss — 400 — — 900 — pF VDS = 10 V, VGS = 0,
Output capacitance
Coss — 220 — — 460 — pF f = 1 MHz
Reverse transfer
capacitance
Crss
— 60 — — 130 — pF
Turn-on delay time
td(on) — 5
——8
— ns ID = 2.5 A, VGS = 10
V,
Rise time
tr — 30 — — 35 — ns RL = 12 Ω
Turn-off delay time
td(off) — 170 — — 180 — ns
Fall time
tf — 75 — — 85 — ns
Body to drain diode
forward voltage
VDF
— 1.0 — — –1.0 — V
IF = 5 A, VGS = 0
Body to drain diode
trr
reverse recovery time
— 100 — — 170 — µs IF = 5 A, VGS = 0,
dIF/dt = 50 A/µs
Note: 1. Pulse Test
Polarity of test conditions for P channel device is reversed.
3
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Номер в каталоге | Описание | Производители |
4AM11 | Silicon N-Channel/P-Channel Power MOS FET Array | Hitachi Semiconductor |
4AM13 | Silicon N-Channel/P-Channel Power MOS FET Array | Hitachi Semiconductor |
4AM15 | Silicon N-Channel/P-Channel Power MOS FET Array | Hitachi Semiconductor |
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